Research paper
Experimental Characterization| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier field effect mobility | 40000cm²/Vs | — | |||
| Fet Mobility | carrier field effect mobility | 11000cm²/Vs | — | |||
| Fet On Off Ratio | relative sheet-resistance change | ~0.05 change in sheet resistance for spin-transport path | — | |||
| Transport | ΔRnl | 10mΩ | — | |||
| Transport | spin signal modulation | approximately half | — | |||
| Fet Threshold Voltage | band gap Eg | 19meV | — | |||
| Transport | spin relaxation time τs | threefold decrease | — | |||
| Transport | spin relaxation length λs | modulated | — | |||
| Transport | contact spacing | 3um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier field effect mobility | 40000cm²/Vs | — | |||
| Fet Mobility | carrier field effect mobility | 11000cm²/Vs | — | |||
| Fet On Off Ratio | relative sheet-resistance change | ~0.05 change in sheet resistance for spin-transport path | — | |||
| Transport | ΔRnl | 10mΩ | — | |||
| Transport | spin signal modulation | approximately half | — | |||
| Fet Threshold Voltage | band gap Eg | 19meV | — | |||
| Transport | spin relaxation time τs | threefold decrease | — | |||
| Transport | spin relaxation length λs | modulated | — | |||
| Transport | contact spacing | 3um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier field effect mobility | 40000cm²/Vs | — | |||
| Fet Mobility | carrier field effect mobility | 11000cm²/Vs | — | |||
| Fet On Off Ratio | relative sheet-resistance change | ~0.05 change in sheet resistance for spin-transport path | — | |||
| Transport | ΔRnl | 10mΩ | — | |||
| Transport | spin signal modulation | approximately half | — | |||
| Fet Threshold Voltage | band gap Eg | 19meV | — | |||
| Transport | spin relaxation time τs | threefold decrease | — | |||
| Transport | spin relaxation length λs | modulated | — | |||
| Transport | contact spacing | 3um | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Mobility | carrier field effect mobility | 40000cm²/Vs | — | |||
| Fet Mobility | carrier field effect mobility | 11000cm²/Vs | — | |||
| Fet On Off Ratio | relative sheet-resistance change | ~0.05 change in sheet resistance for spin-transport path | — | |||
| Transport | ΔRnl | 10mΩ | — | |||
| Transport | spin signal modulation | approximately half | — | |||
| Fet Threshold Voltage | band gap Eg | 19meV | — | |||
| Transport | spin relaxation time τs | threefold decrease | — | |||
| Transport | spin relaxation length λs | modulated | — | |||
| Transport | contact spacing | 3um | — |