Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties1 figure
1 preparation4 characterizations7 properties2 figures
1 preparation4 characterizations7 properties2 figures
1 preparation5 characterizations9 properties3 figures
1 preparation1 characterization1 figure
1 preparation2 characterizations2 properties2 figures
1 preparation1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Directional telecom photons from a chirally coupled quantum dot
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties1 figure
1 preparation4 characterizations7 properties2 figures
1 preparation4 characterizations7 properties2 figures
1 preparation5 characterizations9 properties3 figures
1 preparation1 characterization1 figure
1 preparation2 characterizations2 properties2 figures
1 preparation1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Directional telecom photons from a chirally coupled quantum dot
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties1 figure
1 preparation4 characterizations7 properties2 figures
1 preparation4 characterizations7 properties2 figures
1 preparation5 characterizations9 properties3 figures
1 preparation1 characterization1 figure
1 preparation2 characterizations2 properties2 figures
1 preparation1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Directional telecom photons from a chirally coupled quantum dot
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations4 properties1 figure
1 preparation4 characterizations7 properties2 figures
1 preparation4 characterizations7 properties2 figures
1 preparation5 characterizations9 properties3 figures
1 preparation1 characterization1 figure
1 preparation2 characterizations2 properties2 figures
1 preparation1 characterization1 figure
Related documents with shared materials, methods, properties, or citations.
Telecom wavelength single-photon emission from quasi-resonantly excited InGaSb/AlGaSb quantum dots
Molecular Beam Epitaxy Growth of Transition Metal Dichalcogenide (Mo,Mn)Se2 on 2D, 3D and polycrystalline substrates
Two-step growth of (In,Ga)N pseudo-substrates on GaN templates by plasma-assisted molecular beam epitaxy
Exciton-polaritons in GaAs-based slab waveguide photonic crystals
Electrically tunable Floquet Weyl photon emission from Dirac semimetal Cd3As2
Fractional-Monolayer 2D-GaN/AlN Structures: Growth Kinetics and UVC-emitter Applications
Dependence of the Mn sticking coefficient on Ga-rich, N-rich, and Ga/N-flux-free conditions in GaN grown by plasma-assisted molecular beam epitaxy
Active nitrogen flux measurement during GaN growth based on the transmitted signal detected with a pyrometer
Directional telecom photons from a chirally coupled quantum dot
Engineering 2D Van der Waals Electrode via MBE-Grown Weyl Semimetal 1T′-WTe2 for Enhanced Photodetection in InSe
