Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 1 in the paper; grown by a two-step MBE process with a low-temperature nucleation step and high-temperature growth.
Encapsulated MoSe₂ grown on exfoliated hBN flakes on SiO₂/Si, corresponding to sample 2 in the paper; grown by a two-step MBE process with longer deposition than sample 1.