Quantum transport reveals spin glass correlations in a 2D network of TbPc2 single-molecule magnets grafted on graphene

Nianjheng Wu; Jules Lefeuvre; Andrew Mayne; Stéphane Campidelli; Jérôme Lagoute; Cyril Chacon; Sophie Guéron; Richard Deblock; Hélène Bouchiat

doi:10.1038/nmat3050

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Research paper

Experimental Characterization

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Nianjheng Wu, Jules Lefeuvre, Andrew Mayne, Stéphane Campidelli et al.

arXiv preprint·2026·10.1038/nmat3050·arXiv:2603.29456

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization14 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization13 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialWS₂Substrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

1 preparation1 characterization1 property8 figures

ExperimentalCStudied MaterialFeTPPStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization14 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization13 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialWS₂Substrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

1 preparation1 characterization1 property8 figures

ExperimentalCStudied MaterialFeTPPStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization14 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization13 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialWS₂Substrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

1 preparation1 characterization1 property8 figures

ExperimentalCStudied MaterialFeTPPStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization14 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

1 preparation1 characterization13 properties8 figures

ExperimentalCStudied MaterialTbPc₂Studied MaterialWS₂Substrate / DielectricSiO₂Substrate / DielectricSiSubstrate / Dielectric

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

1 preparation1 characterization1 property8 figures

ExperimentalCStudied MaterialFeTPPStudied MaterialSiO₂Substrate / DielectricSiSubstrate / Dielectric

Type	Label	Value	Material	Sample	Source
Energy Barrier	TbPc₂ magnetic reversal barrier	600K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Relaxation Time	single-molecule magnetic relaxation time	1us	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction	0.1meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction upper estimate	0.2meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale lower estimate	0.1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale upper estimate	0.2K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Energy Scale	characteristic field scale converted to energy	1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	TbPc₂ Ising-like moment	±6mu_B	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	Fe porphyrin magnetic moment	<3mu_B	FeTPP	Reference graphene field-effect device coated with a continu	—
Resistance Noise Characteristic	noise spectrum	1/f	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Gate Voltage	gate voltage used for noise measurements	55V	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Temperature	base measurement temperature	50mK	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Carrier Doping	graphene after TbPc₂ deposition	large hole doping	C	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Dirac Point Gate Voltage	Dirac point	55V	C	Few-micrometer single-layer graphene device on SiO₂/doped Si	—
Phase Coherence Length Relative Change	phase coherence length relative to Fe porphyrin reference	2 and 5 times smaller	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—

Type	Label	Value	Material	Sample	Source
Energy Barrier	TbPc₂ magnetic reversal barrier	600K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Relaxation Time	single-molecule magnetic relaxation time	1us	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction	0.1meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction upper estimate	0.2meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale lower estimate	0.1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale upper estimate	0.2K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Energy Scale	characteristic field scale converted to energy	1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	TbPc₂ Ising-like moment	±6mu_B	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	Fe porphyrin magnetic moment	<3mu_B	FeTPP	Reference graphene field-effect device coated with a continu	—
Resistance Noise Characteristic	noise spectrum	1/f	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Gate Voltage	gate voltage used for noise measurements	55V	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Temperature	base measurement temperature	50mK	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Carrier Doping	graphene after TbPc₂ deposition	large hole doping	C	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Dirac Point Gate Voltage	Dirac point	55V	C	Few-micrometer single-layer graphene device on SiO₂/doped Si	—
Phase Coherence Length Relative Change	phase coherence length relative to Fe porphyrin reference	2 and 5 times smaller	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—

Type	Label	Value	Material	Sample	Source
Energy Barrier	TbPc₂ magnetic reversal barrier	600K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Relaxation Time	single-molecule magnetic relaxation time	1us	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction	0.1meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction upper estimate	0.2meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale lower estimate	0.1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale upper estimate	0.2K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Energy Scale	characteristic field scale converted to energy	1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	TbPc₂ Ising-like moment	±6mu_B	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	Fe porphyrin magnetic moment	<3mu_B	FeTPP	Reference graphene field-effect device coated with a continu	—
Resistance Noise Characteristic	noise spectrum	1/f	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Gate Voltage	gate voltage used for noise measurements	55V	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Temperature	base measurement temperature	50mK	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Carrier Doping	graphene after TbPc₂ deposition	large hole doping	C	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Dirac Point Gate Voltage	Dirac point	55V	C	Few-micrometer single-layer graphene device on SiO₂/doped Si	—
Phase Coherence Length Relative Change	phase coherence length relative to Fe porphyrin reference	2 and 5 times smaller	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—

Type	Label	Value	Material	Sample	Source
Energy Barrier	TbPc₂ magnetic reversal barrier	600K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Relaxation Time	single-molecule magnetic relaxation time	1us	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction	0.1meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	nearest-neighbor TbPc₂ exchange interaction upper estimate	0.2meV	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale lower estimate	0.1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Interaction Energy	dipolar coupling scale upper estimate	0.2K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Energy Scale	characteristic field scale converted to energy	1K	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	TbPc₂ Ising-like moment	±6mu_B	TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Magnetic Moment	Fe porphyrin magnetic moment	<3mu_B	FeTPP	Reference graphene field-effect device coated with a continu	—
Resistance Noise Characteristic	noise spectrum	1/f	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Gate Voltage	gate voltage used for noise measurements	55V	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Temperature	base measurement temperature	50mK	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Carrier Doping	graphene after TbPc₂ deposition	large hole doping	C	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—
Dirac Point Gate Voltage	Dirac point	55V	C	Few-micrometer single-layer graphene device on SiO₂/doped Si	—
Phase Coherence Length Relative Change	phase coherence length relative to Fe porphyrin reference	2 and 5 times smaller	C TbPc₂	Few-micrometer single-layer graphene device on SiO₂/doped Si Few-micrometer single-layer graphene device on monolayer WS₂	—

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Quantum transport reveals spin glass correlations in a 2D network of TbPc₂ single-molecule magnets grafted on graphene

Samples

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Few-micrometer single-layer graphene device on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Few-micrometer single-layer graphene device on monolayer WS₂ on SiO₂/doped Si, coated with a continuous thin layer of TbPc₂ deposited from the most concentrated solution (solution A).

Reference graphene field-effect device coated with a continuous monolayer of FeTPP porphyrins.

Materials

Processing

Characterization

Properties

Why these are connected