Research paperExperimental CharacterizationFerroelectric switching of interfacial dipoles in α-RuCl₃/graphene heterostructureSoyun Kim, Jo Hyun Yun, Junsik Choe, Dohun Kim et al.arXiv preprint·2026·10.6084/m9.figshare.30747287·arXiv:2508.07187AbstractWe demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/α-RuCl₃ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30 K. Systematic measurements under strong in-plane and out-of-plane magnetic fields reveal negligible effects on the hysteresis characteristics, confirming that the primary mechanism driving the dipole switching is electrostatic. Our findings establish a distinct and robust route to electrically tunable ferroelectric phenomena in van der Waals heterostructures, opening opportunities to explore the interplay between interfacial charge transfer and temperature-tuned barrier crossing of dipole states at the atomic scale.Read more
Device D0: direct graphene/α-RuCl₃ interface without hBN spacer on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D1: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization1 property2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: graphene/trilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D4: graphene/seven-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D5: graphene/ten-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationFerroelectric switching of interfacial dipoles in α-RuCl₃/graphene heterostructureSoyun Kim, Jo Hyun Yun, Junsik Choe, Dohun Kim et al.arXiv preprint·2026·10.6084/m9.figshare.30747287·arXiv:2508.07187AbstractWe demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/α-RuCl₃ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30 K. Systematic measurements under strong in-plane and out-of-plane magnetic fields reveal negligible effects on the hysteresis characteristics, confirming that the primary mechanism driving the dipole switching is electrostatic. Our findings establish a distinct and robust route to electrically tunable ferroelectric phenomena in van der Waals heterostructures, opening opportunities to explore the interplay between interfacial charge transfer and temperature-tuned barrier crossing of dipole states at the atomic scale.Read more
Device D0: direct graphene/α-RuCl₃ interface without hBN spacer on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D1: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization1 property2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: graphene/trilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D4: graphene/seven-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D5: graphene/ten-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationFerroelectric switching of interfacial dipoles in α-RuCl₃/graphene heterostructureSoyun Kim, Jo Hyun Yun, Junsik Choe, Dohun Kim et al.arXiv preprint·2026·10.6084/m9.figshare.30747287·arXiv:2508.07187AbstractWe demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/α-RuCl₃ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30 K. Systematic measurements under strong in-plane and out-of-plane magnetic fields reveal negligible effects on the hysteresis characteristics, confirming that the primary mechanism driving the dipole switching is electrostatic. Our findings establish a distinct and robust route to electrically tunable ferroelectric phenomena in van der Waals heterostructures, opening opportunities to explore the interplay between interfacial charge transfer and temperature-tuned barrier crossing of dipole states at the atomic scale.Read more
Device D0: direct graphene/α-RuCl₃ interface without hBN spacer on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D1: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization1 property2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: graphene/trilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D4: graphene/seven-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D5: graphene/ten-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Research paperExperimental CharacterizationFerroelectric switching of interfacial dipoles in α-RuCl₃/graphene heterostructureSoyun Kim, Jo Hyun Yun, Junsik Choe, Dohun Kim et al.arXiv preprint·2026·10.6084/m9.figshare.30747287·arXiv:2508.07187AbstractWe demonstrate electrically switchable, non-volatile dipoles in graphene/thin hBN/α-RuCl₃ heterostructures, stabilized purely by interfacial charge transfer across an atomically thin dielectric barrier. This mechanism requires no sliding or twisting to explicitly break inversion symmetry and produces robust ferroelectric-like hysteresis loops that emerge prominently near 30 K. Systematic measurements under strong in-plane and out-of-plane magnetic fields reveal negligible effects on the hysteresis characteristics, confirming that the primary mechanism driving the dipole switching is electrostatic. Our findings establish a distinct and robust route to electrically tunable ferroelectric phenomena in van der Waals heterostructures, opening opportunities to explore the interplay between interfacial charge transfer and temperature-tuned barrier crossing of dipole states at the atomic scale.Read more
Device D0: direct graphene/α-RuCl₃ interface without hBN spacer on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D1: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization1 property2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D2: graphene/bilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D3: graphene/trilayer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D4: graphene/seven-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand
Device D5: graphene/ten-layer-hBN/α-RuCl₃ heterostructure on SiO₂/Si substrate.1 characterization2 figuresExperimentalCStudied MaterialBNSubstrate / DielectricRuCl₃Studied MaterialSiO₂Substrate / DielectricSiSubstrate / DielectricExpand