Abstract

For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors such as carrier number and Coulomb scattering mobility fluctuations are revealed also to cause ID variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated GFETs from strong p- to strong n-type bias conditions. A series resistance ID variance model is also derived mainly contributing at high carrier densities.

Abstract

For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors such as carrier number and Coulomb scattering mobility fluctuations are revealed also to cause ID variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated GFETs from strong p- to strong n-type bias conditions. A series resistance ID variance model is also derived mainly contributing at high carrier densities.

Abstract

For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors such as carrier number and Coulomb scattering mobility fluctuations are revealed also to cause ID variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated GFETs from strong p- to strong n-type bias conditions. A series resistance ID variance model is also derived mainly contributing at high carrier densities.

Abstract

For the growth of emerging graphene field-effect transistor (GFET) technologies, a thorough characterization of on-wafer variability is required. Here, we report for the first time a physics-based compact model which precisely describes the drain current (ID) fluctuations of monolayer GFETs. Physical mechanisms known to generate 1/f noise in transistors such as carrier number and Coulomb scattering mobility fluctuations are revealed also to cause ID variance. Such effects are considered in the model by being activated locally in the channel and the integration of their contributions from source to drain results in total variance. The proposed model is experimentally validated from a statistical population of three different-sized solution-gated GFETs from strong p- to strong n-type bias conditions. A series resistance ID variance model is also derived mainly contributing at high carrier densities.