Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Anna Musiał; Maja Wasiluk; Katarzyna Roszak; Michał Gawełczyk; Wojciech Rudno-Rudziński; Paweł Wyborski; Johann P. Reithmaier; Mohamed Benyoucef; Grzegorz Sęk

doi:10.48550/arxiv.2509.24500

Paper details

Research paper

Experimental CharacterizationTheoretical

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Anna Musiał, Maja Wasiluk, Katarzyna Roszak, Michał Gawełczyk et al.

arXiv preprint·2025·10.48550/arxiv.2509.24500·arXiv:2509.24500

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

2 preparations5 characterizations15 properties4 figures

ExperimentalInAsxP₁-xStudied Material

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

No measurements recorded

SimulatedInAsxP₁-xStudied MaterialInPSubstrate / Dielectric

Materials

InAsxP₁-x quantum dot

InAsxP₁-x

Studied Material

Also known as

InAs/InP quantum dotInAs(P)/InP QD

Variables

composition_inhomogeneous= true

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X	822.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	fine structure splitting	7µeV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	CX binding energy	0.6meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	XX binding energy	3.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.2ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.1ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	0.8ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	1430.5nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	0.867eV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	1.41µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	0.05µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0.65	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	maximum magnetic field	5T	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	electron-hole separation estimate	0.4nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X	822.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	fine structure splitting	7µeV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	CX binding energy	0.6meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	XX binding energy	3.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.2ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.1ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	0.8ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	1430.5nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	0.867eV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	1.41µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	0.05µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0.65	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	maximum magnetic field	5T	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	electron-hole separation estimate	0.4nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X	822.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	fine structure splitting	7µeV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	CX binding energy	0.6meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	XX binding energy	3.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.2ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.1ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	0.8ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	1430.5nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	0.867eV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	1.41µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	0.05µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0.65	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	maximum magnetic field	5T	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	electron-hole separation estimate	0.4nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—

Properties

Type	Label	Value	Material	Sample	Source
PL Peak	X	822.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	fine structure splitting	7µeV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	CX binding energy	0.6meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	XX binding energy	3.5meV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.2ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	1.1ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Fet Mobility	lifetime	0.8ns	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	1430.5nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	X resonance	0.867eV	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	1.41µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	diamagnetic shift	0.05µeV/T²	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0.65	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	g-factor	0	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
Raman Peak	maximum magnetic field	5T	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—
PL Peak	electron-hole separation estimate	0.4nm	InAsxP₁-x	Single epitaxial InAsxP₁-x quantum dot investigated by micro	—

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

Generation of C-band entangled photon pairs by biexciton-exciton cascade from symmetric InAs/InP quantum dots

Samples

Single epitaxial InAsxP₁-x quantum dot investigated by microphotoluminescence, magneto-optical measurements, and tomography in a layered InP-based heterostructure with a bottom DBR and etched mesa.

Typical InAsxP₁-x/InP quantum dot used in 8-band k·p plus configuration-interaction calculations to reconstruct the energy structure and structural parameters.

Materials

Why these are connected

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