Research paper
TheoreticalComputed RamanPhosphides-based terahertz quantum-cascade laser
D. V. Ushakov, A. A. Afonenko, R. A. Khabibullin, M. A. Fadeev et al.
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| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | operation bias per cascade | 73mV | — | |||
| Surface Concentration | doped quantum-well electron concentration | 46400000000cm⁻² | — | |||
| Dipole Matrix Element | Zul | 2.44nm | — | |||
| Population Inversion | population inversion | 42% | — | |||
| Sheet Thickness | Ti adhesion layer thickness | 5nm | — | |||
| Doping Concentration | n+ contact layer dopant concentration | 1000000000000000000cm⁻³ | — | |||
| Total Loss Coefficient | total losses | 53.3cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 70.2cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 80.8cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 91.6cm⁻¹ | — | |||
| Loss Contribution | absorption in metal layers | 19.8cm⁻¹ | — | |||
| Loss Contribution | phonon absorption | 37.2cm⁻¹ | — | |||
| Loss Contribution | free-carrier radiation absorption | 22.8cm⁻¹ | — | |||
| Maximum Mode Gain | mode gain | 90cm⁻¹ | — | |||
| Maximum Operating Temperature | maximum operating temperature | 104K | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | operation bias per cascade | 73mV | — | |||
| Surface Concentration | doped quantum-well electron concentration | 46400000000cm⁻² | — | |||
| Dipole Matrix Element | Zul | 2.44nm | — | |||
| Population Inversion | population inversion | 42% | — | |||
| Sheet Thickness | Ti adhesion layer thickness | 5nm | — | |||
| Doping Concentration | n+ contact layer dopant concentration | 1000000000000000000cm⁻³ | — | |||
| Total Loss Coefficient | total losses | 53.3cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 70.2cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 80.8cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 91.6cm⁻¹ | — | |||
| Loss Contribution | absorption in metal layers | 19.8cm⁻¹ | — | |||
| Loss Contribution | phonon absorption | 37.2cm⁻¹ | — | |||
| Loss Contribution | free-carrier radiation absorption | 22.8cm⁻¹ | — | |||
| Maximum Mode Gain | mode gain | 90cm⁻¹ | — | |||
| Maximum Operating Temperature | maximum operating temperature | 104K | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | operation bias per cascade | 73mV | — | |||
| Surface Concentration | doped quantum-well electron concentration | 46400000000cm⁻² | — | |||
| Dipole Matrix Element | Zul | 2.44nm | — | |||
| Population Inversion | population inversion | 42% | — | |||
| Sheet Thickness | Ti adhesion layer thickness | 5nm | — | |||
| Doping Concentration | n+ contact layer dopant concentration | 1000000000000000000cm⁻³ | — | |||
| Total Loss Coefficient | total losses | 53.3cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 70.2cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 80.8cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 91.6cm⁻¹ | — | |||
| Loss Contribution | absorption in metal layers | 19.8cm⁻¹ | — | |||
| Loss Contribution | phonon absorption | 37.2cm⁻¹ | — | |||
| Loss Contribution | free-carrier radiation absorption | 22.8cm⁻¹ | — | |||
| Maximum Mode Gain | mode gain | 90cm⁻¹ | — | |||
| Maximum Operating Temperature | maximum operating temperature | 104K | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Threshold Voltage | operation bias per cascade | 73mV | — | |||
| Surface Concentration | doped quantum-well electron concentration | 46400000000cm⁻² | — | |||
| Dipole Matrix Element | Zul | 2.44nm | — | |||
| Population Inversion | population inversion | 42% | — | |||
| Sheet Thickness | Ti adhesion layer thickness | 5nm | — | |||
| Doping Concentration | n+ contact layer dopant concentration | 1000000000000000000cm⁻³ | — | |||
| Total Loss Coefficient | total losses | 53.3cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 70.2cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 80.8cm⁻¹ | — | |||
| Total Loss Coefficient | total losses | 91.6cm⁻¹ | — | |||
| Loss Contribution | absorption in metal layers | 19.8cm⁻¹ | — | |||
| Loss Contribution | phonon absorption | 37.2cm⁻¹ | — | |||
| Loss Contribution | free-carrier radiation absorption | 22.8cm⁻¹ | — | |||
| Maximum Mode Gain | mode gain | 90cm⁻¹ | — | |||
| Maximum Operating Temperature | maximum operating temperature | 104K | — |