Patent
US 9,583,673SEMICONDUCTOR LIGHT EMITTING DEVICE INCLUDING GaAs SUBSTRATE
Tadahiro HOSOMI
US
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Patent
Atlas literature
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US 9,583,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2 to 7 are cross-sectional views of the semiconductor light emitting device at respective manufacturing steps. First, the substrate 2 of n-type GaAs is …
FIG. 3, an adhesive 21 composed of polyimide system resin 20 is applied by spin coating to entire exposed surfaces of the p-type contact layer 7 and p-side …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor light emitting device, the method comprising: growing a semiconductor layer on a substrate made of GaAs; attaching a temporary supporting substrate to a surface of the semiconductor layer opposite to the substrate with an adhesive made of polyimide system resin; removing a pa 4 whole surface of the substrate by etching so that a thickness of the substrate is reduced down to approximately 1 pm; and after the etching, forming a metallic electrode on the etched surface of the substrate in a state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not more than approximately 60 pm
The method of claim 1 further comprising annealing the metallic electrode in the state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein in the etching, the substrate is etched with acid etching solution.
The method of claim 1 further comprising, after the etching, removing the temporary supporting substrate.
The method of claim 1 further comprising forming the adhesive by applying polyimide system resin with spin coating and evaporating solvent.
The method of claim 1, wherein the semiconductor layer comprises a first reflecting layer disposed on the substrate, a second reflecting layer disposed on the first reflecting layer, and an n-type clad layer disposed on the second reflecting layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not less than approximately 35 pm and not more than approximately 50 pm.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device
Materials described outside the worked examples.
GaAs
polyimide system resin
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 540–650 nm | — |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,583,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2 to 7 are cross-sectional views of the semiconductor light emitting device at respective manufacturing steps. First, the substrate 2 of n-type GaAs is …
FIG. 3, an adhesive 21 composed of polyimide system resin 20 is applied by spin coating to entire exposed surfaces of the p-type contact layer 7 and p-side …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor light emitting device, the method comprising: growing a semiconductor layer on a substrate made of GaAs; attaching a temporary supporting substrate to a surface of the semiconductor layer opposite to the substrate with an adhesive made of polyimide system resin; removing a pa 4 whole surface of the substrate by etching so that a thickness of the substrate is reduced down to approximately 1 pm; and after the etching, forming a metallic electrode on the etched surface of the substrate in a state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not more than approximately 60 pm
The method of claim 1 further comprising annealing the metallic electrode in the state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein in the etching, the substrate is etched with acid etching solution.
The method of claim 1 further comprising, after the etching, removing the temporary supporting substrate.
The method of claim 1 further comprising forming the adhesive by applying polyimide system resin with spin coating and evaporating solvent.
The method of claim 1, wherein the semiconductor layer comprises a first reflecting layer disposed on the substrate, a second reflecting layer disposed on the first reflecting layer, and an n-type clad layer disposed on the second reflecting layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not less than approximately 35 pm and not more than approximately 50 pm.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device
Materials described outside the worked examples.
GaAs
polyimide system resin
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 540–650 nm | — |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,583,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2 to 7 are cross-sectional views of the semiconductor light emitting device at respective manufacturing steps. First, the substrate 2 of n-type GaAs is …
FIG. 3, an adhesive 21 composed of polyimide system resin 20 is applied by spin coating to entire exposed surfaces of the p-type contact layer 7 and p-side …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor light emitting device, the method comprising: growing a semiconductor layer on a substrate made of GaAs; attaching a temporary supporting substrate to a surface of the semiconductor layer opposite to the substrate with an adhesive made of polyimide system resin; removing a pa 4 whole surface of the substrate by etching so that a thickness of the substrate is reduced down to approximately 1 pm; and after the etching, forming a metallic electrode on the etched surface of the substrate in a state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not more than approximately 60 pm
The method of claim 1 further comprising annealing the metallic electrode in the state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein in the etching, the substrate is etched with acid etching solution.
The method of claim 1 further comprising, after the etching, removing the temporary supporting substrate.
The method of claim 1 further comprising forming the adhesive by applying polyimide system resin with spin coating and evaporating solvent.
The method of claim 1, wherein the semiconductor layer comprises a first reflecting layer disposed on the substrate, a second reflecting layer disposed on the first reflecting layer, and an n-type clad layer disposed on the second reflecting layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not less than approximately 35 pm and not more than approximately 50 pm.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device
Materials described outside the worked examples.
GaAs
polyimide system resin
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 540–650 nm | — |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,583,673Patent drawings and their descriptions. Click a drawing to enlarge it.
FIGS. 2 to 7 are cross-sectional views of the semiconductor light emitting device at respective manufacturing steps. First, the substrate 2 of n-type GaAs is …
FIG. 3, an adhesive 21 composed of polyimide system resin 20 is applied by spin coating to entire exposed surfaces of the p-type contact layer 7 and p-side …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method for manufacturing a semiconductor light emitting device, the method comprising: growing a semiconductor layer on a substrate made of GaAs; attaching a temporary supporting substrate to a surface of the semiconductor layer opposite to the substrate with an adhesive made of polyimide system resin; removing a pa 4 whole surface of the substrate by etching so that a thickness of the substrate is reduced down to approximately 1 pm; and after the etching, forming a metallic electrode on the etched surface of the substrate in a state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not more than approximately 60 pm
The method of claim 1 further comprising annealing the metallic electrode in the state where the temporary supporting substrate is still attached to the semiconductor layer.
The method of claim 1, wherein in the etching, the substrate is etched with acid etching solution.
The method of claim 1 further comprising, after the etching, removing the temporary supporting substrate.
The method of claim 1 further comprising forming the adhesive by applying polyimide system resin with spin coating and evaporating solvent.
The method of claim 1, wherein the semiconductor layer comprises a first reflecting layer disposed on the substrate, a second reflecting layer disposed on the first reflecting layer, and an n-type clad layer disposed on the second reflecting layer.
The method of claim 1, wherein the part of the substrate is removed by the etching so that a total thickness in a stacking direction of the semiconductor light emitting device is not less than approximately 35 pm and not more than approximately 50 pm.
Layer stacks claimed or described, ordered top of device to substrate.
semiconductor light emitting device
Materials described outside the worked examples.
GaAs
polyimide system resin
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 540–650 nm | — |
Thickness | 2–20 nm |
Related documents with shared materials, methods, properties, or citations.
metallic electrode
AlInP
AlGaInP
Aly In1-yP (0.3<=y<=0.7)
AlyIn(1-y)P
(Alx Ga1-x)0.5In0.5P (0.3<=x<=0.85)
(AlxGa(1-x))0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Alp Ga1-p)q In1-qP multi-quantum well light emitting layer
(AlpGa(1-p))qIn(1-q)P
(Alr Ga1-r)s In1-sP barrier layer
(AlrGa(1-r))sIn(1-s)P
p-type Al0.5In0.5P
Al0.5In0.5P
p-type GaP
GaP
AuBe/Au
AuGe/Au
| — |
Pressure | 5–10 pa | — |
Temperature | 600–800 °C | — |
Thickness | 3–30 nm | — |
ILLUMINABLE GAAS SWITCHING COMPONENT WITH TRANSPARENT HOUSING AND ASSOCIATED MICROWAVE CIRCUIT
metallic electrode
AlInP
AlGaInP
Aly In1-yP (0.3<=y<=0.7)
AlyIn(1-y)P
(Alx Ga1-x)0.5In0.5P (0.3<=x<=0.85)
(AlxGa(1-x))0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Alp Ga1-p)q In1-qP multi-quantum well light emitting layer
(AlpGa(1-p))qIn(1-q)P
(Alr Ga1-r)s In1-sP barrier layer
(AlrGa(1-r))sIn(1-s)P
p-type Al0.5In0.5P
Al0.5In0.5P
p-type GaP
GaP
AuBe/Au
AuGe/Au
| — |
Pressure | 5–10 pa | — |
Temperature | 600–800 °C | — |
Thickness | 3–30 nm | — |
ILLUMINABLE GAAS SWITCHING COMPONENT WITH TRANSPARENT HOUSING AND ASSOCIATED MICROWAVE CIRCUIT
metallic electrode
AlInP
AlGaInP
Aly In1-yP (0.3<=y<=0.7)
AlyIn(1-y)P
(Alx Ga1-x)0.5In0.5P (0.3<=x<=0.85)
(AlxGa(1-x))0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Alp Ga1-p)q In1-qP multi-quantum well light emitting layer
(AlpGa(1-p))qIn(1-q)P
(Alr Ga1-r)s In1-sP barrier layer
(AlrGa(1-r))sIn(1-s)P
p-type Al0.5In0.5P
Al0.5In0.5P
p-type GaP
GaP
AuBe/Au
AuGe/Au
| — |
Pressure | 5–10 pa | — |
Temperature | 600–800 °C | — |
Thickness | 3–30 nm | — |
ILLUMINABLE GAAS SWITCHING COMPONENT WITH TRANSPARENT HOUSING AND ASSOCIATED MICROWAVE CIRCUIT
metallic electrode
AlInP
AlGaInP
Aly In1-yP (0.3<=y<=0.7)
AlyIn(1-y)P
(Alx Ga1-x)0.5In0.5P (0.3<=x<=0.85)
(AlxGa(1-x))0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Al0.3Ga0.7)0.5In0.5P
(Alp Ga1-p)q In1-qP multi-quantum well light emitting layer
(AlpGa(1-p))qIn(1-q)P
(Alr Ga1-r)s In1-sP barrier layer
(AlrGa(1-r))sIn(1-s)P
p-type Al0.5In0.5P
Al0.5In0.5P
p-type GaP
GaP
AuBe/Au
AuGe/Au
| — |
Pressure | 5–10 pa | — |
Temperature | 600–800 °C | — |
Thickness | 3–30 nm | — |
ILLUMINABLE GAAS SWITCHING COMPONENT WITH TRANSPARENT HOUSING AND ASSOCIATED MICROWAVE CIRCUIT