Research paper
Experimental CharacterizationSignatures of correlated defects in an ultra-clean Wigner crystal in the extreme quantum limit
P. T. Madathil, C. Wang, S. K. Singh, A. Gupta et al.
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties3 figures
1 characterization2 properties3 figures
1 characterization2 properties3 figures
1 characterization3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | electron density | 2.810¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 4.410¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 710¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 1010¹⁰ cm⁻² | — | — | ||
| Fet Mobility | mobility | 1510⁶ cm²/Vs | — | |||
| Fet Mobility | mobility | 3610⁶ cm²/Vs | — | |||
| Substrate Thickness | quantum well width | 89nm | — | — | ||
| Substrate Thickness | quantum well width | 70nm | — | — | ||
| Substrate Thickness | quantum well width | 58nm | — | — | ||
| Substrate Thickness | quantum well width | 50nm | — | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties3 figures
1 characterization2 properties3 figures
1 characterization2 properties3 figures
1 characterization3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | electron density | 2.810¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 4.410¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 710¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 1010¹⁰ cm⁻² | — | — | ||
| Fet Mobility | mobility | 1510⁶ cm²/Vs | — | |||
| Fet Mobility | mobility | 3610⁶ cm²/Vs | — | |||
| Substrate Thickness | quantum well width | 89nm | — | — | ||
| Substrate Thickness | quantum well width | 70nm | — | — | ||
| Substrate Thickness | quantum well width | 58nm | — | — | ||
| Substrate Thickness | quantum well width | 50nm | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration
Composite Fermion Mass
Collective neutral excitations as sensitive probe for the quality of 2D charge carrier systems in ultra-pure GaAs quantum wells
Multi-Segment Photonic Power Converters for Energy Harvesting and High-Speed Optical Wireless Communication
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Phonon interference effects in GaAs-GaP superlattice nanowires
Phosphides-based terahertz quantum-cascade laser
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum technologies
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties3 figures
1 characterization2 properties3 figures
1 characterization2 properties3 figures
1 characterization3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | electron density | 2.810¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 4.410¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 710¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 1010¹⁰ cm⁻² | — | — | ||
| Fet Mobility | mobility | 1510⁶ cm²/Vs | — | |||
| Fet Mobility | mobility | 3610⁶ cm²/Vs | — | |||
| Substrate Thickness | quantum well width | 89nm | — | — | ||
| Substrate Thickness | quantum well width | 70nm | — | — | ||
| Substrate Thickness | quantum well width | 58nm | — | — | ||
| Substrate Thickness | quantum well width | 50nm | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration
Composite Fermion Mass
Collective neutral excitations as sensitive probe for the quality of 2D charge carrier systems in ultra-pure GaAs quantum wells
Multi-Segment Photonic Power Converters for Energy Harvesting and High-Speed Optical Wireless Communication
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Phonon interference effects in GaAs-GaP superlattice nanowires
Phosphides-based terahertz quantum-cascade laser
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum technologies
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 characterization3 properties3 figures
1 characterization2 properties3 figures
1 characterization2 properties3 figures
1 characterization3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Fet Carrier Concentration | electron density | 2.810¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 4.410¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 710¹⁰ cm⁻² | — | — | ||
| Fet Carrier Concentration | electron density | 1010¹⁰ cm⁻² | — | — | ||
| Fet Mobility | mobility | 1510⁶ cm²/Vs | — | |||
| Fet Mobility | mobility | 3610⁶ cm²/Vs | — | |||
| Substrate Thickness | quantum well width | 89nm | — | — | ||
| Substrate Thickness | quantum well width | 70nm | — | — | ||
| Substrate Thickness | quantum well width | 58nm | — | — | ||
| Substrate Thickness | quantum well width | 50nm | — | — |
Related documents with shared materials, methods, properties, or citations.
The role of small-angle electron-electron scattering in transverse magnetic focusing experiment
MoSi Superconducting Nanowire Single-Photon Detectors on GaAs for On-Chip Integration
Composite Fermion Mass
Collective neutral excitations as sensitive probe for the quality of 2D charge carrier systems in ultra-pure GaAs quantum wells
Multi-Segment Photonic Power Converters for Energy Harvesting and High-Speed Optical Wireless Communication
Entropic signatures of the single-impurity Kondo state
Tunable Terahertz Detection and Generation using FETs operating in the saturation regime
Phonon interference effects in GaAs-GaP superlattice nanowires
Phosphides-based terahertz quantum-cascade laser
Extremely weak sub-kelvin electron-phonon coupling in InAs on insulator
Silicon-based Josephson junction field-effect transistors enabling cryogenic logic and quantum technologies