Abstract

Highly transparent and conductive electrodes operating in the infrared are critically needed for optoelectronic devices. This paper demonstrates a large-area metal-integrated monolithic high-contrast grating electrode on GaAs that achieves near-unity mid- to far-infrared transmission while retaining very low sheet resistance. Numerical modeling based on the plane wave admittance method is used to optimize the grating geometry and explain the polarization-dependent transmission.

Abstract

Highly transparent and conductive electrodes operating in the infrared are critically needed for optoelectronic devices. This paper demonstrates a large-area metal-integrated monolithic high-contrast grating electrode on GaAs that achieves near-unity mid- to far-infrared transmission while retaining very low sheet resistance. Numerical modeling based on the plane wave admittance method is used to optimize the grating geometry and explain the polarization-dependent transmission.

Abstract

Highly transparent and conductive electrodes operating in the infrared are critically needed for optoelectronic devices. This paper demonstrates a large-area metal-integrated monolithic high-contrast grating electrode on GaAs that achieves near-unity mid- to far-infrared transmission while retaining very low sheet resistance. Numerical modeling based on the plane wave admittance method is used to optimize the grating geometry and explain the polarization-dependent transmission.

Abstract

Highly transparent and conductive electrodes operating in the infrared are critically needed for optoelectronic devices. This paper demonstrates a large-area metal-integrated monolithic high-contrast grating electrode on GaAs that achieves near-unity mid- to far-infrared transmission while retaining very low sheet resistance. Numerical modeling based on the plane wave admittance method is used to optimize the grating geometry and explain the polarization-dependent transmission.