Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations10 properties1 figure
1 preparation4 characterizations3 properties2 figures
2 preparations1 characterization3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | flake thickness in layers | 14layer | — | |||
| Flake Area | uniform rhombohedral domain area | 1000um² | — | |||
| Flake Area | device area | 1300um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.32fraction | — | |||
| Flake Area | average total flake area | 3100um² | — | |||
| Flake Area | average total flake area | 1200um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.12fraction | — | |||
| Domain Area | contiguous rhombohedral domain area threshold | 500um² | — | |||
| Domain Area | long-tail rhombohedral domain area | 1500um² | — | |||
| Device Yield | fabrication yield | 0.9fraction | — | |||
| Device Yield | fabrication yield | 0.8fraction | — | |||
| Device Yield | fabrication yield | 0.3fraction | — | |||
| Device Area | central uniform magnetization area | 100um² | — | |||
| Mean Free Path | disorder mean free path | 200um | — | |||
| Layer Count | device thickness in layers | 13layer | — | |||
| Flake Area | contiguous rhombohedral domain area | 1000um² | — |
Related documents with shared materials, methods, properties, or citations.
Nonlinear Valley and Spin Valves in Bilayer Graphene
Chiral-helical junctions in screened graphene
Large spin signal and spin rectification in folded-bilayer graphene
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Electro-Optical Switching in a Nonlinear Metasurface
Thermal transport mapping in twisted double bilayer graphene
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Josephson junctions based on ultraclean carbon nanotubes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations10 properties1 figure
1 preparation4 characterizations3 properties2 figures
2 preparations1 characterization3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | flake thickness in layers | 14layer | — | |||
| Flake Area | uniform rhombohedral domain area | 1000um² | — | |||
| Flake Area | device area | 1300um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.32fraction | — | |||
| Flake Area | average total flake area | 3100um² | — | |||
| Flake Area | average total flake area | 1200um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.12fraction | — | |||
| Domain Area | contiguous rhombohedral domain area threshold | 500um² | — | |||
| Domain Area | long-tail rhombohedral domain area | 1500um² | — | |||
| Device Yield | fabrication yield | 0.9fraction | — | |||
| Device Yield | fabrication yield | 0.8fraction | — | |||
| Device Yield | fabrication yield | 0.3fraction | — | |||
| Device Area | central uniform magnetization area | 100um² | — | |||
| Mean Free Path | disorder mean free path | 200um | — | |||
| Layer Count | device thickness in layers | 13layer | — | |||
| Flake Area | contiguous rhombohedral domain area | 1000um² | — |
Related documents with shared materials, methods, properties, or citations.
Nonlinear Valley and Spin Valves in Bilayer Graphene
Chiral-helical junctions in screened graphene
Large spin signal and spin rectification in folded-bilayer graphene
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Electro-Optical Switching in a Nonlinear Metasurface
Thermal transport mapping in twisted double bilayer graphene
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Josephson junctions based on ultraclean carbon nanotubes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations10 properties1 figure
1 preparation4 characterizations3 properties2 figures
2 preparations1 characterization3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | flake thickness in layers | 14layer | — | |||
| Flake Area | uniform rhombohedral domain area | 1000um² | — | |||
| Flake Area | device area | 1300um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.32fraction | — | |||
| Flake Area | average total flake area | 3100um² | — | |||
| Flake Area | average total flake area | 1200um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.12fraction | — | |||
| Domain Area | contiguous rhombohedral domain area threshold | 500um² | — | |||
| Domain Area | long-tail rhombohedral domain area | 1500um² | — | |||
| Device Yield | fabrication yield | 0.9fraction | — | |||
| Device Yield | fabrication yield | 0.8fraction | — | |||
| Device Yield | fabrication yield | 0.3fraction | — | |||
| Device Area | central uniform magnetization area | 100um² | — | |||
| Mean Free Path | disorder mean free path | 200um | — | |||
| Layer Count | device thickness in layers | 13layer | — | |||
| Flake Area | contiguous rhombohedral domain area | 1000um² | — |
Related documents with shared materials, methods, properties, or citations.
Nonlinear Valley and Spin Valves in Bilayer Graphene
Chiral-helical junctions in screened graphene
Large spin signal and spin rectification in folded-bilayer graphene
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Electro-Optical Switching in a Nonlinear Metasurface
Thermal transport mapping in twisted double bilayer graphene
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Josephson junctions based on ultraclean carbon nanotubes
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation3 characterizations10 properties1 figure
1 preparation4 characterizations3 properties2 figures
2 preparations1 characterization3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Layer Count | flake thickness in layers | 14layer | — | |||
| Flake Area | uniform rhombohedral domain area | 1000um² | — | |||
| Flake Area | device area | 1300um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.32fraction | — | |||
| Flake Area | average total flake area | 3100um² | — | |||
| Flake Area | average total flake area | 1200um² | — | |||
| Rhombohedral Fraction | rhombohedral stacking fraction | 0.12fraction | — | |||
| Domain Area | contiguous rhombohedral domain area threshold | 500um² | — | |||
| Domain Area | long-tail rhombohedral domain area | 1500um² | — | |||
| Device Yield | fabrication yield | 0.9fraction | — | |||
| Device Yield | fabrication yield | 0.8fraction | — | |||
| Device Yield | fabrication yield | 0.3fraction | — | |||
| Device Area | central uniform magnetization area | 100um² | — | |||
| Mean Free Path | disorder mean free path | 200um | — | |||
| Layer Count | device thickness in layers | 13layer | — | |||
| Flake Area | contiguous rhombohedral domain area | 1000um² | — |
Related documents with shared materials, methods, properties, or citations.
Nonlinear Valley and Spin Valves in Bilayer Graphene
Chiral-helical junctions in screened graphene
Large spin signal and spin rectification in folded-bilayer graphene
High mobility transport in isotopically-enriched 12C and 13C exfoliated graphene
Electro-Optical Switching in a Nonlinear Metasurface
Thermal transport mapping in twisted double bilayer graphene
Interface-Controlled Antiferromagnetic Tunnel Junctions based on a metallic van der Waals A-type Antiferromagnet
Josephson junctions based on ultraclean carbon nanotubes
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