Abstract

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies. However, the III-V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs-on-Si lasers that perform on par with top-tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimised growth strategies. Atomic-resolution scanning tunnelling microscopy and spectroscopy experiments reveal exceptional material quality in the active region, and elucidate the impact of each growth strategy on defect dynamics. The optimised III-V-on-silicon ridge-waveguide lasers demonstrate a continuous-wave threshold current as low as 6 mA and high-temperature operation reaching 165 °C. At 80 °C, critical for data centre applications, they maintain a 12-mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high-density integration of a broad spectrum of critical III-V photonic technologies into the silicon ecosystem.

Abstract

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies. However, the III-V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs-on-Si lasers that perform on par with top-tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimised growth strategies. Atomic-resolution scanning tunnelling microscopy and spectroscopy experiments reveal exceptional material quality in the active region, and elucidate the impact of each growth strategy on defect dynamics. The optimised III-V-on-silicon ridge-waveguide lasers demonstrate a continuous-wave threshold current as low as 6 mA and high-temperature operation reaching 165 °C. At 80 °C, critical for data centre applications, they maintain a 12-mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high-density integration of a broad spectrum of critical III-V photonic technologies into the silicon ecosystem.

Abstract

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies. However, the III-V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs-on-Si lasers that perform on par with top-tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimised growth strategies. Atomic-resolution scanning tunnelling microscopy and spectroscopy experiments reveal exceptional material quality in the active region, and elucidate the impact of each growth strategy on defect dynamics. The optimised III-V-on-silicon ridge-waveguide lasers demonstrate a continuous-wave threshold current as low as 6 mA and high-temperature operation reaching 165 °C. At 80 °C, critical for data centre applications, they maintain a 12-mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high-density integration of a broad spectrum of critical III-V photonic technologies into the silicon ecosystem.

Abstract

The direct growth of III-V materials on silicon is a key enabler for developing monolithically integrated lasers, offering substantial potential for ultra-dense photonic integration in vital communications and computing technologies. However, the III-V/Si lattice and thermal expansion mismatch pose significant hurdles, leading to defects that degrade lasing performance. This study overcomes this challenge, demonstrating InAs/GaAs-on-Si lasers that perform on par with top-tier lasers on native GaAs substrates. This is achieved through a newly developed epitaxial approach comprising a series of rigorously optimised growth strategies. Atomic-resolution scanning tunnelling microscopy and spectroscopy experiments reveal exceptional material quality in the active region, and elucidate the impact of each growth strategy on defect dynamics. The optimised III-V-on-silicon ridge-waveguide lasers demonstrate a continuous-wave threshold current as low as 6 mA and high-temperature operation reaching 165 °C. At 80 °C, critical for data centre applications, they maintain a 12-mA threshold and 35 mW output power. Furthermore, lasers fabricated on both Si and GaAs substrates using identical processes exhibit virtually identical average threshold current. By eliminating the performance limitations associated with the GaAs/Si mismatch, this study paves the way for robust and high-density integration of a broad spectrum of critical III-V photonic technologies into the silicon ecosystem.