Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 preparations1 characterization1 property3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Diffusion of photo-excited holes in viscous electron fluid
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 preparations1 characterization1 property3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Diffusion of photo-excited holes in viscous electron fluid
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 preparations1 characterization1 property3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Diffusion of photo-excited holes in viscous electron fluid
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 preparations1 characterization1 property3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization3 figures
6 preparations1 characterization1 property3 figures
Related documents with shared materials, methods, properties, or citations.
Fractional focusing peaks and collective dynamics in two-dimensional Fermi liquids
Indium-Bond-And-Stop-Etch (IBASE) Technique for Dual-side Processing of Thin High-mobility GaAs/AlGaAs Epitaxial Layers
Tunable reciprocal and nonreciprocal contributions to 1D Coulomb Drag
Nonlinear Optical Microscopy of Semiconductor–Metal Nanocavities
Experimental investigation on the effect of temperature on the frequency limit of GaAs/AlGaAs and AlGaN/GaN 2DEG Hall-effect sensors
Electroluminescence in n-type GaAs unipolar nanoLEDs
Resonant and off-resonant magnetoacoustic waves in epitaxial Fe3Si/GaAs hybrid structures
Формирование тонких буферных слоев GaAs на поверхности кремния для светоизлучающих приборов
Diffusion of photo-excited holes in viscous electron fluid
Spin-polarized lasing in a photonic lattice
Temperature and Electron Concentration Dependences of 1/f Noise in Hg1-xCdxTe: Evidence for a Mobility Fluctuations Mechanism
Low-defect quantum dot lasers directly grown on silicon exhibiting low threshold current and high output power at elevated temperatures
