Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system

Paper details

Research paper

Experimental GrowthExperimental Characterization

P. T. Madathil, K. A. Villegas Rosales, Y. J. Chung, K. W. West et al.

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 preparation4 characterizations4 properties3 figures

ExperimentalGaAsStudied MaterialAlxGa₁-xAsStudied MaterialSiDopantInSnCapping Or Contact

GaAs

Studied Material

Also known as

gallium arsenide

studied material

AlxGa1−xAs

AlxGa₁-xAs

Studied Material

Also known as

Related documents with shared materials, methods, properties, or citations.

Moving crystal phases of a quantum Wigner solid in an ultra-high-quality 2D electron system | Matter42 Literature

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well width	89nm	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA	—	—
Carrier Density	areal density	2.83e10 cm⁻²	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Fet Mobility	low-temperature mobility	1510⁶ cm²/Vs	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Temperature	melting temperature Tm	120mK	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well width	89nm	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA	—	—
Carrier Density	areal density	2.83e10 cm⁻²	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Fet Mobility	low-temperature mobility	1510⁶ cm²/Vs	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Temperature	melting temperature Tm	120mK	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well width	89nm	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA	—	—
Carrier Density	areal density	2.83e10 cm⁻²	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Fet Mobility	low-temperature mobility	1510⁶ cm²/Vs	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Temperature	melting temperature Tm	120mK	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	GaAs quantum well width	89nm	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA	—	—
Carrier Density	areal density	2.83e10 cm⁻²	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Fet Mobility	low-temperature mobility	1510⁶ cm²/Vs	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—
Temperature	melting temperature Tm	120mK	GaAs	Ultra-low-disorder dilute 2DES confined to an 89-nm-wide GaA		—