Research paperExperimental CharacterizationNon-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron GasZ. T. Wang, M. Hilke, N. Fong, D. G. Austing et al.arXiv preprint·2022·10.1103/PhysRevB.107.195406·arXiv:2211.15551AbstractWe report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (µ=20 × 10⁶ cm2/Vs) two-dimensional electron gas in a narrow (15 µm wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current.Read more
Ultra-high-mobility 2DEG in a narrow Hall bar fabricated from a GaAs/AlGaAs quantum well heterostructure grown by molecular beam epitaxy.1 preparation1 characterization4 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialTwo-dimensional electron gasStudied MaterialExpand
Research paperExperimental CharacterizationNon-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron GasZ. T. Wang, M. Hilke, N. Fong, D. G. Austing et al.arXiv preprint·2022·10.1103/PhysRevB.107.195406·arXiv:2211.15551AbstractWe report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (µ=20 × 10⁶ cm2/Vs) two-dimensional electron gas in a narrow (15 µm wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current.Read more
Ultra-high-mobility 2DEG in a narrow Hall bar fabricated from a GaAs/AlGaAs quantum well heterostructure grown by molecular beam epitaxy.1 preparation1 characterization4 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialTwo-dimensional electron gasStudied MaterialExpand
Research paperExperimental CharacterizationNon-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron GasZ. T. Wang, M. Hilke, N. Fong, D. G. Austing et al.arXiv preprint·2022·10.1103/PhysRevB.107.195406·arXiv:2211.15551AbstractWe report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (µ=20 × 10⁶ cm2/Vs) two-dimensional electron gas in a narrow (15 µm wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current.Read more
Ultra-high-mobility 2DEG in a narrow Hall bar fabricated from a GaAs/AlGaAs quantum well heterostructure grown by molecular beam epitaxy.1 preparation1 characterization4 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialTwo-dimensional electron gasStudied MaterialExpand
Research paperExperimental CharacterizationNon-linear Transport Phenomena and Current-induced Hydrodynamics in Ultra-high Mobility Two-dimensional Electron GasZ. T. Wang, M. Hilke, N. Fong, D. G. Austing et al.arXiv preprint·2022·10.1103/PhysRevB.107.195406·arXiv:2211.15551AbstractWe report on non-linear transport phenomena at high filling factor and DC current-induced electronic hydrodynamics in an ultra-high mobility (µ=20 × 10⁶ cm2/Vs) two-dimensional electron gas in a narrow (15 µm wide) GaAs/AlGaAs Hall bar for DC current densities reaching 0.67 A/m. The various phenomena and the boundaries between the phenomena are captured together in a two-dimensional differential resistivity map as a function of magnetic field (up to 250 mT) and DC current.Read more
Ultra-high-mobility 2DEG in a narrow Hall bar fabricated from a GaAs/AlGaAs quantum well heterostructure grown by molecular beam epitaxy.1 preparation1 characterization4 properties2 figuresExperimentalGaAsStudied MaterialAl0.3Ga0.7AsStudied MaterialTwo-dimensional electron gasStudied MaterialExpand