Research paper
Experimental CharacterizationLiquid Metal Printed Ultrathin Oxides for Monolayer WS₂ Top-Gate Transistors
Yiyu Zhang, Dasari Venkatakrishnarao, Michel Bosman, Wei Fu et al.
2025
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 figure
1 preparation3 characterizations1 property2 figures
1 preparation2 characterizations4 properties
1 preparation2 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Ga₂O₃ film thickness | 3nm | — | |||
| Substrate Thickness | Ga₂O₃ film thickness on monolayer WS₂ | 1.2nm | — | |||
| Fet On Off Ratio | Ion/Ioff | 100000 | — | |||
| Fet Threshold Voltage | threshold voltage | —V | — | |||
| Fet Sheet Resistance | gate leakage current density | 0.00024A/cm² | — | |||
| Fet Mobility | subthreshold swing | 84.9mV/dec | — | |||
| Fet Mobility | equivalent oxide thickness | 1nm | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 figure
1 preparation3 characterizations1 property2 figures
1 preparation2 characterizations4 properties
1 preparation2 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Ga₂O₃ film thickness | 3nm | — | |||
| Substrate Thickness | Ga₂O₃ film thickness on monolayer WS₂ | 1.2nm | — | |||
| Fet On Off Ratio | Ion/Ioff | 100000 | — | |||
| Fet Threshold Voltage | threshold voltage | —V | — | |||
| Fet Sheet Resistance | gate leakage current density | 0.00024A/cm² | — | |||
| Fet Mobility | subthreshold swing | 84.9mV/dec | — | |||
| Fet Mobility | equivalent oxide thickness | 1nm | — |
Related documents with shared materials, methods, properties, or citations.
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Valley engineering electron-hole liquids in TMDC monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations
Spectroscopic Ellipsometry for Two-Dimensional Materials: Methods, Optical Modeling, and Emerging Phenomena
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
High-performance broadband Faraday rotation spectroscopy of 2D materials and thin magnetic films
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 figure
1 preparation3 characterizations1 property2 figures
1 preparation2 characterizations4 properties
1 preparation2 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Ga₂O₃ film thickness | 3nm | — | |||
| Substrate Thickness | Ga₂O₃ film thickness on monolayer WS₂ | 1.2nm | — | |||
| Fet On Off Ratio | Ion/Ioff | 100000 | — | |||
| Fet Threshold Voltage | threshold voltage | —V | — | |||
| Fet Sheet Resistance | gate leakage current density | 0.00024A/cm² | — | |||
| Fet Mobility | subthreshold swing | 84.9mV/dec | — | |||
| Fet Mobility | equivalent oxide thickness | 1nm | — |
Related documents with shared materials, methods, properties, or citations.
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Valley engineering electron-hole liquids in TMDC monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations
Spectroscopic Ellipsometry for Two-Dimensional Materials: Methods, Optical Modeling, and Emerging Phenomena
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
High-performance broadband Faraday rotation spectroscopy of 2D materials and thin magnetic films
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
1 preparation2 characterizations1 figure
1 preparation3 characterizations1 property2 figures
1 preparation2 characterizations4 properties
1 preparation2 characterizations1 property2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | Ga₂O₃ film thickness | 3nm | — | |||
| Substrate Thickness | Ga₂O₃ film thickness on monolayer WS₂ | 1.2nm | — | |||
| Fet On Off Ratio | Ion/Ioff | 100000 | — | |||
| Fet Threshold Voltage | threshold voltage | —V | — | |||
| Fet Sheet Resistance | gate leakage current density | 0.00024A/cm² | — | |||
| Fet Mobility | subthreshold swing | 84.9mV/dec | — | |||
| Fet Mobility | equivalent oxide thickness | 1nm | — |
Related documents with shared materials, methods, properties, or citations.
Fast fabrication of WS2/Bi2Se3 heterostructure for high-performance photodetection
Valley engineering electron-hole liquids in TMDC monolayers
A Facile Strategy for the Growth of High-Quality Tungsten Disulfide Crystals Mediated by Oxygen-Deficient Oxide Precursors
Liquid Metal Oxide-assisted Integration of High-k Dielectrics and Metal Contacts for Two-Dimensional Electronics
Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations
Spectroscopic Ellipsometry for Two-Dimensional Materials: Methods, Optical Modeling, and Emerging Phenomena
Nano-Ironing van der Waals Heterostructures Towards Electrically Controlled Quantum Dots
High-performance broadband Faraday rotation spectroscopy of 2D materials and thin magnetic films