Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Ying-Chuan Chen; Yu-Ting Chao; Edward Chen; Chao-Hsin Wu; Yuh-Renn Wu

doi:10.1103/PhysRevMaterials.7.094001

Paper details

Research paper

Experimental CharacterizationComputational Kinetic Model

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations

Ying-Chuan Chen, Yu-Ting Chao, Edward Chen, Chao-Hsin Wu et al.

2023·10.1103/PhysRevMaterials.7.094001·arXiv:2304.11345

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes on heavily doped p-type Si substrate; active WS₂ thickness 33 nm (44 layers).

1 preparation4 characterizations4 properties2 figures

ExperimentalWS₂Studied Material

MoS₂ RRAM device used for comparison with Au/Ti electrodes; active layer thickness 20 nm.

1 characterization3 properties1 figure

ExperimentalMoS₂Studied Material

h-BN RRAM device used for comparison with Au/Ti electrodes; active layer thickness 39.4 nm.

1 characterization3 properties1 figure

ExperimentalBNStudied Material

KMC model system for WS₂ RRAM parameter extraction and I-V simulation.

2 properties

SimulatedWS₂Studied Material

KMC model system for MoS₂ RRAM parameter extraction and I-V simulation.

2 properties

SimulatedMoS₂Studied Material

KMC model system for h-BN RRAM parameter extraction and I-V simulation.

2 properties

SimulatedBNStudied Material

Materials

WS₂

Studied Material

studied material

MoS₂

Studied Material

studied material

h-BN

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Studies of two-dimensional material resistive random-access memory by kinetic Monte Carlo simulations | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Switching Voltage	set voltage	0.5V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	reset voltage	-0.6V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	set voltage	0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	set voltage	0.65V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.6V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	WS₂ thickness	33nm	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Sample Thickness	MoS₂ thickness	20nm	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	h-BN thickness	39.4nm	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Layer Count	WS₂ layers	44	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Retention Failure Time	room-temperature retention failure time	12300s	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s		—
Retention Failure Time	room-temperature retention failure time	31800s	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V		—
Retention Failure Time	room-temperature retention failure time	11800000s	BN	KMC model system for h-BN RRAM parameter extraction and I-V		—
Oscillation Period	lattice oscillation period	18fs	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s	—	—
Oscillation Period	lattice oscillation period	21.51fs	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V	—	—
Oscillation Period	lattice oscillation period	24.4fs	BN	KMC model system for h-BN RRAM parameter extraction and I-V	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Switching Voltage	set voltage	0.5V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	reset voltage	-0.6V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	set voltage	0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	set voltage	0.65V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.6V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	WS₂ thickness	33nm	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Sample Thickness	MoS₂ thickness	20nm	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	h-BN thickness	39.4nm	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Layer Count	WS₂ layers	44	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Retention Failure Time	room-temperature retention failure time	12300s	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s		—
Retention Failure Time	room-temperature retention failure time	31800s	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V		—
Retention Failure Time	room-temperature retention failure time	11800000s	BN	KMC model system for h-BN RRAM parameter extraction and I-V		—
Oscillation Period	lattice oscillation period	18fs	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s	—	—
Oscillation Period	lattice oscillation period	21.51fs	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V	—	—
Oscillation Period	lattice oscillation period	24.4fs	BN	KMC model system for h-BN RRAM parameter extraction and I-V	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Switching Voltage	set voltage	0.5V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	reset voltage	-0.6V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	set voltage	0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	set voltage	0.65V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.6V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	WS₂ thickness	33nm	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Sample Thickness	MoS₂ thickness	20nm	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	h-BN thickness	39.4nm	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Layer Count	WS₂ layers	44	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Retention Failure Time	room-temperature retention failure time	12300s	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s		—
Retention Failure Time	room-temperature retention failure time	31800s	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V		—
Retention Failure Time	room-temperature retention failure time	11800000s	BN	KMC model system for h-BN RRAM parameter extraction and I-V		—
Oscillation Period	lattice oscillation period	18fs	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s	—	—
Oscillation Period	lattice oscillation period	21.51fs	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V	—	—
Oscillation Period	lattice oscillation period	24.4fs	BN	KMC model system for h-BN RRAM parameter extraction and I-V	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Switching Voltage	set voltage	0.5V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	reset voltage	-0.6V	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Switching Voltage	set voltage	0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.9V	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	set voltage	0.65V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Switching Voltage	reset voltage	-0.6V	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	WS₂ thickness	33nm	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Sample Thickness	MoS₂ thickness	20nm	MoS₂	MoS₂ RRAM device used for comparison with Au/Ti electrodes;	—	—
Sample Thickness	h-BN thickness	39.4nm	BN	h-BN RRAM device used for comparison with Au/Ti electrodes;	—	—
Layer Count	WS₂ layers	44	WS₂	Exfoliated WS₂ RRAM device with asymmetric Au/Ti electrodes		—
Retention Failure Time	room-temperature retention failure time	12300s	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s		—
Retention Failure Time	room-temperature retention failure time	31800s	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V		—
Retention Failure Time	room-temperature retention failure time	11800000s	BN	KMC model system for h-BN RRAM parameter extraction and I-V		—
Oscillation Period	lattice oscillation period	18fs	WS₂	KMC model system for WS₂ RRAM parameter extraction and I-V s	—	—
Oscillation Period	lattice oscillation period	21.51fs	MoS₂	KMC model system for MoS₂ RRAM parameter extraction and I-V	—	—
Oscillation Period	lattice oscillation period	24.4fs	BN	KMC model system for h-BN RRAM parameter extraction and I-V	—	—