Abstract

Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties which expand the possibilities for future optoelectronic, photovoltaic and nanoelectronic applications. A portable, fast and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half-wet polydimethylsiloxane (PDMS) transfer process utilizing the change of adhesion energy with the help of micron sized water droplets. Using this method, a vertical stacking of WS₂/Bi₂Se₃ heterostructure with a straddling band configuration is successfully assembled on fluorophlogopite substrate. Thanks to the complementary bandgaps and high efficiency of interfacial charge-transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.

Abstract

Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties which expand the possibilities for future optoelectronic, photovoltaic and nanoelectronic applications. A portable, fast and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half-wet polydimethylsiloxane (PDMS) transfer process utilizing the change of adhesion energy with the help of micron sized water droplets. Using this method, a vertical stacking of WS₂/Bi₂Se₃ heterostructure with a straddling band configuration is successfully assembled on fluorophlogopite substrate. Thanks to the complementary bandgaps and high efficiency of interfacial charge-transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.

Abstract

Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties which expand the possibilities for future optoelectronic, photovoltaic and nanoelectronic applications. A portable, fast and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half-wet polydimethylsiloxane (PDMS) transfer process utilizing the change of adhesion energy with the help of micron sized water droplets. Using this method, a vertical stacking of WS₂/Bi₂Se₃ heterostructure with a straddling band configuration is successfully assembled on fluorophlogopite substrate. Thanks to the complementary bandgaps and high efficiency of interfacial charge-transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.

Abstract

Two-dimensional (2D) material heterostructures have attracted considerable attention owing to their interesting and novel physical properties which expand the possibilities for future optoelectronic, photovoltaic and nanoelectronic applications. A portable, fast and deterministic transfer technique is highly needed for the fabrication of heterostructures. Herein, we report a fast half-wet polydimethylsiloxane (PDMS) transfer process utilizing the change of adhesion energy with the help of micron sized water droplets. Using this method, a vertical stacking of WS₂/Bi₂Se₃ heterostructure with a straddling band configuration is successfully assembled on fluorophlogopite substrate. Thanks to the complementary bandgaps and high efficiency of interfacial charge-transfer, the photodetector based on the heterostructure exhibits a superior responsivity of 109.9 A W-1 for a visible incident light at 473 nm and 26.7 A W-1 for a 1064 nm near-infrared illumination. Such high photoresponsivity of the heterostructure demonstrates that our transfer method not only owns time efficiency but also ensures high quality of the heterointerface. Our study may open new pathways to the fast and massive fabrication of various vertical 2D heterostructures for applications in twistronics/valleytronics and other band engineering devices.