Patent
US 8,815,010InP Single Crystal Wafer and Method for Producing InP Single Crystal
Akira Noda
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 8,815,010Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1] This is an EPD map showing an EPD distribution on a full wafer surface cut out from a seed side of an. InP single crystal obtained according to an …
FIG. 2] This is an EPD map showing an EPD distribution of a full wafer surface cut out from the vicinity of a 9 center of the InP single crystal obtained …
FIG. 3] This is an EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal obtained …
FIG. 4] This is an exemplary EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal …
FIG. 5 is a schematic configuration diagram showing a crystal growth device according to an embodiment. The crystal growth device of the embodiment includes an …
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
[[A]] An I nP single crystal wafer, comprising an area having a dislocation density of 200/cm2 or less occupying 60% or more of the wafer, wherein the wafer is an iron-doped or undoped In P s in gle crystal wafer, and wherein a size of an k+P nglc crystal wafer whic i cut out from the iron-doped or undoped InP s in gle crystal wafer is cut out from an iron-doped or undoped InP single crystal and has a diameter in the range of from 3 inches to 4 inches.
The InP single crystal wafer as claimed in claim 2, wherein an area having a dislocation density of 0/cm2 occupies 50% or more of the wafer. previously presented
The In P single crystal wafer as claimed in claim 2, wherein the InP single crystal is grown by a liquid-encapsulated Czochralski method in which a semiconductor raw mate ri al and an encapsulant are contained in a raw mate ri al melt containing part compris ing a cy li ndrical crucible having a bottom, the raw mate ri al containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised.
A method for producing [[a]] the In P single crystal wafer of claim 2, comp risin g a liquid-encapsulated Czochralski method, BIRCH, STEWART, KOLASCH & BIRCH, LLP MSW/CMR/nbt App li cation No-11/587,698 Docket No. 1592- 0 166PUS 1 Reply to Office Action of Page 3 of 11 wherein a semiconductor raw material and an encapsulant are contained in a raw material melt contai ni ng part comprising a cylindrical crucible having a bottom, the raw material conta inin g part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw mate n al in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25 * C/cm or less and setting a t emperature fall amountt temperature to fall at a rate of 0.25 C/hr or more, and wherein the crystal is an iron-doped or undoped I nP single crystal, and where in a-size-ef an I nP s in gle crystal wafer whie h is cut out from the iron-doped or undoped I nP single crystal and the InP single crystal wafer has a diameter [[i s]] in the range of from 3 inches to 4 inches. currently amended
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Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A crystal growth device (described with reference to FIG. 5) is used to grow an InP single crystal by the LEC method. The photoluminescence in-plane distribution in a wafer cut from the vicinity of the center of the InP single crystal obtained according to the Example is shown in FIG. 6. A Comparative Example 2 PL distribution is shown in FIG. 7.
Layer stacks claimed or described, ordered top of device to substrate.
InP single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Area with EPD ≤ 200/cm² occupies ≥60% of wafer | — | InP |
Area with EPD = 0/cm² occupies ≥50% of wafer | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,010Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1] This is an EPD map showing an EPD distribution on a full wafer surface cut out from a seed side of an. InP single crystal obtained according to an …
FIG. 2] This is an EPD map showing an EPD distribution of a full wafer surface cut out from the vicinity of a 9 center of the InP single crystal obtained …
FIG. 3] This is an EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal obtained …
FIG. 4] This is an exemplary EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal …
FIG. 5 is a schematic configuration diagram showing a crystal growth device according to an embodiment. The crystal growth device of the embodiment includes an …
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
[[A]] An I nP single crystal wafer, comprising an area having a dislocation density of 200/cm2 or less occupying 60% or more of the wafer, wherein the wafer is an iron-doped or undoped In P s in gle crystal wafer, and wherein a size of an k+P nglc crystal wafer whic i cut out from the iron-doped or undoped InP s in gle crystal wafer is cut out from an iron-doped or undoped InP single crystal and has a diameter in the range of from 3 inches to 4 inches.
The InP single crystal wafer as claimed in claim 2, wherein an area having a dislocation density of 0/cm2 occupies 50% or more of the wafer. previously presented
The In P single crystal wafer as claimed in claim 2, wherein the InP single crystal is grown by a liquid-encapsulated Czochralski method in which a semiconductor raw mate ri al and an encapsulant are contained in a raw mate ri al melt containing part compris ing a cy li ndrical crucible having a bottom, the raw mate ri al containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised.
A method for producing [[a]] the In P single crystal wafer of claim 2, comp risin g a liquid-encapsulated Czochralski method, BIRCH, STEWART, KOLASCH & BIRCH, LLP MSW/CMR/nbt App li cation No-11/587,698 Docket No. 1592- 0 166PUS 1 Reply to Office Action of Page 3 of 11 wherein a semiconductor raw material and an encapsulant are contained in a raw material melt contai ni ng part comprising a cylindrical crucible having a bottom, the raw material conta inin g part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw mate n al in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25 * C/cm or less and setting a t emperature fall amountt temperature to fall at a rate of 0.25 C/hr or more, and wherein the crystal is an iron-doped or undoped I nP single crystal, and where in a-size-ef an I nP s in gle crystal wafer whie h is cut out from the iron-doped or undoped I nP single crystal and the InP single crystal wafer has a diameter [[i s]] in the range of from 3 inches to 4 inches. currently amended
canceled
canceled
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canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A crystal growth device (described with reference to FIG. 5) is used to grow an InP single crystal by the LEC method. The photoluminescence in-plane distribution in a wafer cut from the vicinity of the center of the InP single crystal obtained according to the Example is shown in FIG. 6. A Comparative Example 2 PL distribution is shown in FIG. 7.
Layer stacks claimed or described, ordered top of device to substrate.
InP single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Area with EPD ≤ 200/cm² occupies ≥60% of wafer | — | InP |
Area with EPD = 0/cm² occupies ≥50% of wafer | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,010Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1] This is an EPD map showing an EPD distribution on a full wafer surface cut out from a seed side of an. InP single crystal obtained according to an …
FIG. 2] This is an EPD map showing an EPD distribution of a full wafer surface cut out from the vicinity of a 9 center of the InP single crystal obtained …
FIG. 3] This is an EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal obtained …
FIG. 4] This is an exemplary EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal …
FIG. 5 is a schematic configuration diagram showing a crystal growth device according to an embodiment. The crystal growth device of the embodiment includes an …
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
[[A]] An I nP single crystal wafer, comprising an area having a dislocation density of 200/cm2 or less occupying 60% or more of the wafer, wherein the wafer is an iron-doped or undoped In P s in gle crystal wafer, and wherein a size of an k+P nglc crystal wafer whic i cut out from the iron-doped or undoped InP s in gle crystal wafer is cut out from an iron-doped or undoped InP single crystal and has a diameter in the range of from 3 inches to 4 inches.
The InP single crystal wafer as claimed in claim 2, wherein an area having a dislocation density of 0/cm2 occupies 50% or more of the wafer. previously presented
The In P single crystal wafer as claimed in claim 2, wherein the InP single crystal is grown by a liquid-encapsulated Czochralski method in which a semiconductor raw mate ri al and an encapsulant are contained in a raw mate ri al melt containing part compris ing a cy li ndrical crucible having a bottom, the raw mate ri al containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised.
A method for producing [[a]] the In P single crystal wafer of claim 2, comp risin g a liquid-encapsulated Czochralski method, BIRCH, STEWART, KOLASCH & BIRCH, LLP MSW/CMR/nbt App li cation No-11/587,698 Docket No. 1592- 0 166PUS 1 Reply to Office Action of Page 3 of 11 wherein a semiconductor raw material and an encapsulant are contained in a raw material melt contai ni ng part comprising a cylindrical crucible having a bottom, the raw material conta inin g part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw mate n al in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25 * C/cm or less and setting a t emperature fall amountt temperature to fall at a rate of 0.25 C/hr or more, and wherein the crystal is an iron-doped or undoped I nP single crystal, and where in a-size-ef an I nP s in gle crystal wafer whie h is cut out from the iron-doped or undoped I nP single crystal and the InP single crystal wafer has a diameter [[i s]] in the range of from 3 inches to 4 inches. currently amended
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A crystal growth device (described with reference to FIG. 5) is used to grow an InP single crystal by the LEC method. The photoluminescence in-plane distribution in a wafer cut from the vicinity of the center of the InP single crystal obtained according to the Example is shown in FIG. 6. A Comparative Example 2 PL distribution is shown in FIG. 7.
Layer stacks claimed or described, ordered top of device to substrate.
InP single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Area with EPD ≤ 200/cm² occupies ≥60% of wafer | — | InP |
Area with EPD = 0/cm² occupies ≥50% of wafer | — |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,815,010Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1] This is an EPD map showing an EPD distribution on a full wafer surface cut out from a seed side of an. InP single crystal obtained according to an …
FIG. 2] This is an EPD map showing an EPD distribution of a full wafer surface cut out from the vicinity of a 9 center of the InP single crystal obtained …
FIG. 3] This is an EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal obtained …
FIG. 4] This is an exemplary EPD map showing an EPD distribution on a full wafer surface cut out from the vicinity of a center of an InP single crystal …
FIG. 5 is a schematic configuration diagram showing a crystal growth device according to an embodiment. The crystal growth device of the embodiment includes an …
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
canceled
[[A]] An I nP single crystal wafer, comprising an area having a dislocation density of 200/cm2 or less occupying 60% or more of the wafer, wherein the wafer is an iron-doped or undoped In P s in gle crystal wafer, and wherein a size of an k+P nglc crystal wafer whic i cut out from the iron-doped or undoped InP s in gle crystal wafer is cut out from an iron-doped or undoped InP single crystal and has a diameter in the range of from 3 inches to 4 inches.
The InP single crystal wafer as claimed in claim 2, wherein an area having a dislocation density of 0/cm2 occupies 50% or more of the wafer. previously presented
The In P single crystal wafer as claimed in claim 2, wherein the InP single crystal is grown by a liquid-encapsulated Czochralski method in which a semiconductor raw mate ri al and an encapsulant are contained in a raw mate ri al melt containing part compris ing a cy li ndrical crucible having a bottom, the raw mate ri al containing part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw material in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised.
A method for producing [[a]] the In P single crystal wafer of claim 2, comp risin g a liquid-encapsulated Czochralski method, BIRCH, STEWART, KOLASCH & BIRCH, LLP MSW/CMR/nbt App li cation No-11/587,698 Docket No. 1592- 0 166PUS 1 Reply to Office Action of Page 3 of 11 wherein a semiconductor raw material and an encapsulant are contained in a raw material melt contai ni ng part comprising a cylindrical crucible having a bottom, the raw material conta inin g part is heated to melt the raw material, and a seed crystal is brought into contact with a surface of a melt of the raw mate n al in a state of being covered with the encapsulant to grow a crystal while the seed crystal is raised; a crystal shoulder part is grown from the seed crystal by setting a temperature gradient in a crystal growth direction to 25 * C/cm or less and setting a t emperature fall amountt temperature to fall at a rate of 0.25 C/hr or more, and wherein the crystal is an iron-doped or undoped I nP single crystal, and where in a-size-ef an I nP s in gle crystal wafer whie h is cut out from the iron-doped or undoped I nP single crystal and the InP single crystal wafer has a diameter [[i s]] in the range of from 3 inches to 4 inches. currently amended
canceled
canceled
canceled
canceled
canceled
Embodiments described in the patent, grouped by the materials and process steps they use.
3 materials1 process step
A crystal growth device (described with reference to FIG. 5) is used to grow an InP single crystal by the LEC method. The photoluminescence in-plane distribution in a wafer cut from the vicinity of the center of the InP single crystal obtained according to the Example is shown in FIG. 6. A Comparative Example 2 PL distribution is shown in FIG. 7.
Layer stacks claimed or described, ordered top of device to substrate.
InP single crystal wafer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 6, it was confirmed that average intensity of PL was almost uniform at about 5000 CU. A luminescent spot density was 10/cm 2. [0035] Thus, according to the …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Area with EPD ≤ 200/cm² occupies ≥60% of wafer | — | InP |
Area with EPD = 0/cm² occupies ≥50% of wafer | — |
Related documents with shared materials, methods, properties, or citations.
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Non-dislocation area (EPD ≤ 500/cm²) ≥70% of wafer described in abstract/description | — | InP |
Average EPD under conventional LEC conditions (65 °C/cm gradient, Fe-doped InP) | 20000 cm⁻² | InP:Fe |
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Non-dislocation area (EPD ≤ 500/cm²) ≥70% of wafer described in abstract/description | — | InP |
Average EPD under conventional LEC conditions (65 °C/cm gradient, Fe-doped InP) | 20000 cm⁻² | InP:Fe |
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Non-dislocation area (EPD ≤ 500/cm²) ≥70% of wafer described in abstract/description | — | InP |
Average EPD under conventional LEC conditions (65 °C/cm gradient, Fe-doped InP) | 20000 cm⁻² | InP:Fe |
FIG. 7] This is a photoluminescence in-plane diagram in the wafer cut out from the vicinity of the center of the InP single crystal obtained according to the …
Non-dislocation area (EPD ≤ 500/cm²) ≥70% of wafer described in abstract/description | — | InP |
Average EPD under conventional LEC conditions (65 °C/cm gradient, Fe-doped InP) | 20000 cm⁻² | InP:Fe |