Patent
Atlas literature
Patent
US 12,049,582 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the shelling process for green InP/ZnSe/ZnS core/shell/shell nanostructures indicating the 65 application of metal halides at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a photoluminescence quantum yield of between 96% and 100%.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure composition comprising: (a) a nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photoluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width 10 at half-maximum of less than 45 nm; and (b) at least one organic resin.
A method of preparing a nanostructure comprising a core and a first shell and a second shell, comprising: (a) admixing a zinc source and a core comprising InP; (b) admixing (a) with an organic acid; (c) admixing (b) with at least one shell precursor; (d) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C.; (e) admixing (d) with at least one shell precursor, wherein the shell precursor is different from the shell precursor in (c); and (f) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C., and further comprising admixing (f) with at least one metal halide, wherein the at least one metal halide admixed is ZnCl2; to produce a nanostructure comprising a core and a first shell and a second shell, wherein the first shell com-prises ZnSe and the second shell comprises ZnS, and wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%.
The method of claim 5, wherein the admixing in (a) or (c) further comprises at least one metal halide.
The method of claim 5, wherein the organic acid is oleic acid.
The method of claim 5, wherein the at least one shell precursor in (c) is a selenium source or a sulfur source.
The method of claim 5, wherein the nanostructure has a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure molded article comprising: (a) a first conductive layer; (b) a second conductive layer; and (c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises a population of nanostructures comprising a core comprising indium phos-phide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell com-prises ZnS, wherein the nanostructure displays a pho-toluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm; and at least one organic resin.
The nanostructure molded article of claim 12, wherein the nanostructure exhibits a full width at half-maximum of between 10 nm and 10 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP/ZnSe/ZnS core-shell quantum dot nanostructure
nanostructure molded article
Materials described outside the worked examples.
indium phosphide
InP
zinc selenide
ZnSe
zinc sulfide
ZnS
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoluminescence quantum yield (claimed range) | 94–100 | InP |
full width at half-maximum (claimed upper limit) | ≤ 45 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,049,582 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the shelling process for green InP/ZnSe/ZnS core/shell/shell nanostructures indicating the 65 application of metal halides at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a photoluminescence quantum yield of between 96% and 100%.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure composition comprising: (a) a nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photoluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width 10 at half-maximum of less than 45 nm; and (b) at least one organic resin.
A method of preparing a nanostructure comprising a core and a first shell and a second shell, comprising: (a) admixing a zinc source and a core comprising InP; (b) admixing (a) with an organic acid; (c) admixing (b) with at least one shell precursor; (d) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C.; (e) admixing (d) with at least one shell precursor, wherein the shell precursor is different from the shell precursor in (c); and (f) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C., and further comprising admixing (f) with at least one metal halide, wherein the at least one metal halide admixed is ZnCl2; to produce a nanostructure comprising a core and a first shell and a second shell, wherein the first shell com-prises ZnSe and the second shell comprises ZnS, and wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%.
The method of claim 5, wherein the admixing in (a) or (c) further comprises at least one metal halide.
The method of claim 5, wherein the organic acid is oleic acid.
The method of claim 5, wherein the at least one shell precursor in (c) is a selenium source or a sulfur source.
The method of claim 5, wherein the nanostructure has a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure molded article comprising: (a) a first conductive layer; (b) a second conductive layer; and (c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises a population of nanostructures comprising a core comprising indium phos-phide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell com-prises ZnS, wherein the nanostructure displays a pho-toluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm; and at least one organic resin.
The nanostructure molded article of claim 12, wherein the nanostructure exhibits a full width at half-maximum of between 10 nm and 10 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP/ZnSe/ZnS core-shell quantum dot nanostructure
nanostructure molded article
Materials described outside the worked examples.
indium phosphide
InP
zinc selenide
ZnSe
zinc sulfide
ZnS
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoluminescence quantum yield (claimed range) | 94–100 | InP |
full width at half-maximum (claimed upper limit) | ≤ 45 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,049,582 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the shelling process for green InP/ZnSe/ZnS core/shell/shell nanostructures indicating the 65 application of metal halides at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a photoluminescence quantum yield of between 96% and 100%.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure composition comprising: (a) a nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photoluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width 10 at half-maximum of less than 45 nm; and (b) at least one organic resin.
A method of preparing a nanostructure comprising a core and a first shell and a second shell, comprising: (a) admixing a zinc source and a core comprising InP; (b) admixing (a) with an organic acid; (c) admixing (b) with at least one shell precursor; (d) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C.; (e) admixing (d) with at least one shell precursor, wherein the shell precursor is different from the shell precursor in (c); and (f) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C., and further comprising admixing (f) with at least one metal halide, wherein the at least one metal halide admixed is ZnCl2; to produce a nanostructure comprising a core and a first shell and a second shell, wherein the first shell com-prises ZnSe and the second shell comprises ZnS, and wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%.
The method of claim 5, wherein the admixing in (a) or (c) further comprises at least one metal halide.
The method of claim 5, wherein the organic acid is oleic acid.
The method of claim 5, wherein the at least one shell precursor in (c) is a selenium source or a sulfur source.
The method of claim 5, wherein the nanostructure has a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure molded article comprising: (a) a first conductive layer; (b) a second conductive layer; and (c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises a population of nanostructures comprising a core comprising indium phos-phide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell com-prises ZnS, wherein the nanostructure displays a pho-toluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm; and at least one organic resin.
The nanostructure molded article of claim 12, wherein the nanostructure exhibits a full width at half-maximum of between 10 nm and 10 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP/ZnSe/ZnS core-shell quantum dot nanostructure
nanostructure molded article
Materials described outside the worked examples.
indium phosphide
InP
zinc selenide
ZnSe
zinc sulfide
ZnS
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoluminescence quantum yield (claimed range) | 94–100 | InP |
full width at half-maximum (claimed upper limit) | ≤ 45 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,049,582 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic of the shelling process for green InP/ZnSe/ZnS core/shell/shell nanostructures indicating the 65 application of metal halides at various …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a photoluminescence quantum yield of between 96% and 100%.
The nanostructure of claim 1, wherein the nanostruc-ture exhibits a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure composition comprising: (a) a nanostructure comprising a core comprising indium phosphide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell comprises ZnS, wherein the nanostructure displays a photoluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width 10 at half-maximum of less than 45 nm; and (b) at least one organic resin.
A method of preparing a nanostructure comprising a core and a first shell and a second shell, comprising: (a) admixing a zinc source and a core comprising InP; (b) admixing (a) with an organic acid; (c) admixing (b) with at least one shell precursor; (d) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C.; (e) admixing (d) with at least one shell precursor, wherein the shell precursor is different from the shell precursor in (c); and (f) raising, lowering, or maintaining the temperature to between about 200° C. and about 310° C., and further comprising admixing (f) with at least one metal halide, wherein the at least one metal halide admixed is ZnCl2; to produce a nanostructure comprising a core and a first shell and a second shell, wherein the first shell com-prises ZnSe and the second shell comprises ZnS, and wherein the nanostructure displays a photolumines-cence quantum yield between 94% and 100%.
The method of claim 5, wherein the admixing in (a) or (c) further comprises at least one metal halide.
The method of claim 5, wherein the organic acid is oleic acid.
The method of claim 5, wherein the at least one shell precursor in (c) is a selenium source or a sulfur source.
The method of claim 5, wherein the nanostructure has a full width at half-maximum of between 10 nm and 40 nm.
A nanostructure molded article comprising: (a) a first conductive layer; (b) a second conductive layer; and (c) a nanostructure layer between the first conductive layer and the second conductive layer, wherein the nanostructure layer comprises a population of nanostructures comprising a core comprising indium phos-phide and a first shell and a second shell, wherein the first shell comprises ZnSe and the second shell com-prises ZnS, wherein the nanostructure displays a pho-toluminescence quantum yield between 94% and 100%, and wherein the nanostructure has a full width at half-maximum of less than 45 nm; and at least one organic resin.
The nanostructure molded article of claim 12, wherein the nanostructure exhibits a full width at half-maximum of between 10 nm and 10 nm. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP/ZnSe/ZnS core-shell quantum dot nanostructure
nanostructure molded article
Materials described outside the worked examples.
indium phosphide
InP
zinc selenide
ZnSe
zinc sulfide
ZnS
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
photoluminescence quantum yield (claimed range) | 94–100 | InP |
full width at half-maximum (claimed upper limit) | ≤ 45 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 11
Related documents with shared materials, methods, properties, or citations.
zinc chloride
ZnCl₂
oleic acid
metal halides (GaCl3, AlCl3, YCl3, MgBr2, ZnBr2, ZrCl₄)
zinc dioleate
photoluminescence quantum yield (dependent claim 2 range) | 96–100 | InP |
full width at half-maximum (dependent claim 3 range) | 10–40 | InP |
Temperature | 65–150 °C | — |
Thickness | 1–15 nm | — |
Thickness | 610–650 nm | — |
Thickness | 0.05–3.5 nm | — |
Temperature | 20–100 °C | — |
Temperature | 200–310 °C | — |
Duration | 2–240 minutes | — |
Duration | 2–200 minutes | — |
Duration | 30–120 minutes | — |
Thickness | 5–6 nm | — |
Thickness | 0.08–3.5 nm | — |
Temperature | 250–310 °C | — |
Temperature | 100–250 °C | — |
Thickness | 0.01–40 mM | — |
Thickness | 1–2.5 mM | — |
Thickness | 300–750 nm | — |
Thickness | 300–650 nm | — |
Thickness | 300–550 nm | — |
Thickness | 300–450 nm | — |
Thickness | 450–750 nm | — |
Thickness | 450–650 nm | — |
Thickness | 450–550 nm | — |
Thickness | 550–750 nm | — |
Thickness | 550–650 nm | — |
Thickness | 650–750 nm | — |
Thickness | 500–550 nm | — |
Thickness | 600–650 nm | — |
Thickness | 10–60 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–60 nm | — |
Thickness | 20–40 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–60 nm | — |
Thickness | 30–40 nm | — |
Thickness | 40–60 nm | — |
Thickness | 35–45 nm | — |
Thickness | 3–10 µm | — |
Thickness | 90–110 nm | — |
Thickness | 40–70 µm | — |
Thickness | 40–65 µm | — |
Thickness | 40–60 µm | — |
Thickness | 40–50 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 45 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 75 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | 10–10 nm | — |
Cited non-patent literature · 1
zinc chloride
ZnCl₂
oleic acid
metal halides (GaCl3, AlCl3, YCl3, MgBr2, ZnBr2, ZrCl₄)
zinc dioleate
photoluminescence quantum yield (dependent claim 2 range) | 96–100 | InP |
full width at half-maximum (dependent claim 3 range) | 10–40 | InP |
Temperature | 65–150 °C | — |
Thickness | 1–15 nm | — |
Thickness | 610–650 nm | — |
Thickness | 0.05–3.5 nm | — |
Temperature | 20–100 °C | — |
Temperature | 200–310 °C | — |
Duration | 2–240 minutes | — |
Duration | 2–200 minutes | — |
Duration | 30–120 minutes | — |
Thickness | 5–6 nm | — |
Thickness | 0.08–3.5 nm | — |
Temperature | 250–310 °C | — |
Temperature | 100–250 °C | — |
Thickness | 0.01–40 mM | — |
Thickness | 1–2.5 mM | — |
Thickness | 300–750 nm | — |
Thickness | 300–650 nm | — |
Thickness | 300–550 nm | — |
Thickness | 300–450 nm | — |
Thickness | 450–750 nm | — |
Thickness | 450–650 nm | — |
Thickness | 450–550 nm | — |
Thickness | 550–750 nm | — |
Thickness | 550–650 nm | — |
Thickness | 650–750 nm | — |
Thickness | 500–550 nm | — |
Thickness | 600–650 nm | — |
Thickness | 10–60 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–60 nm | — |
Thickness | 20–40 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–60 nm | — |
Thickness | 30–40 nm | — |
Thickness | 40–60 nm | — |
Thickness | 35–45 nm | — |
Thickness | 3–10 µm | — |
Thickness | 90–110 nm | — |
Thickness | 40–70 µm | — |
Thickness | 40–65 µm | — |
Thickness | 40–60 µm | — |
Thickness | 40–50 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 45 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 75 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | 10–10 nm | — |
Cited non-patent literature · 1
zinc chloride
ZnCl₂
oleic acid
metal halides (GaCl3, AlCl3, YCl3, MgBr2, ZnBr2, ZrCl₄)
zinc dioleate
photoluminescence quantum yield (dependent claim 2 range) | 96–100 | InP |
full width at half-maximum (dependent claim 3 range) | 10–40 | InP |
Temperature | 65–150 °C | — |
Thickness | 1–15 nm | — |
Thickness | 610–650 nm | — |
Thickness | 0.05–3.5 nm | — |
Temperature | 20–100 °C | — |
Temperature | 200–310 °C | — |
Duration | 2–240 minutes | — |
Duration | 2–200 minutes | — |
Duration | 30–120 minutes | — |
Thickness | 5–6 nm | — |
Thickness | 0.08–3.5 nm | — |
Temperature | 250–310 °C | — |
Temperature | 100–250 °C | — |
Thickness | 0.01–40 mM | — |
Thickness | 1–2.5 mM | — |
Thickness | 300–750 nm | — |
Thickness | 300–650 nm | — |
Thickness | 300–550 nm | — |
Thickness | 300–450 nm | — |
Thickness | 450–750 nm | — |
Thickness | 450–650 nm | — |
Thickness | 450–550 nm | — |
Thickness | 550–750 nm | — |
Thickness | 550–650 nm | — |
Thickness | 650–750 nm | — |
Thickness | 500–550 nm | — |
Thickness | 600–650 nm | — |
Thickness | 10–60 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–60 nm | — |
Thickness | 20–40 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–60 nm | — |
Thickness | 30–40 nm | — |
Thickness | 40–60 nm | — |
Thickness | 35–45 nm | — |
Thickness | 3–10 µm | — |
Thickness | 90–110 nm | — |
Thickness | 40–70 µm | — |
Thickness | 40–65 µm | — |
Thickness | 40–60 µm | — |
Thickness | 40–50 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 45 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 75 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | 10–10 nm | — |
Cited non-patent literature · 1
zinc chloride
ZnCl₂
oleic acid
metal halides (GaCl3, AlCl3, YCl3, MgBr2, ZnBr2, ZrCl₄)
zinc dioleate
photoluminescence quantum yield (dependent claim 2 range) | 96–100 | InP |
full width at half-maximum (dependent claim 3 range) | 10–40 | InP |
Temperature | 65–150 °C | — |
Thickness | 1–15 nm | — |
Thickness | 610–650 nm | — |
Thickness | 0.05–3.5 nm | — |
Temperature | 20–100 °C | — |
Temperature | 200–310 °C | — |
Duration | 2–240 minutes | — |
Duration | 2–200 minutes | — |
Duration | 30–120 minutes | — |
Thickness | 5–6 nm | — |
Thickness | 0.08–3.5 nm | — |
Temperature | 250–310 °C | — |
Temperature | 100–250 °C | — |
Thickness | 0.01–40 mM | — |
Thickness | 1–2.5 mM | — |
Thickness | 300–750 nm | — |
Thickness | 300–650 nm | — |
Thickness | 300–550 nm | — |
Thickness | 300–450 nm | — |
Thickness | 450–750 nm | — |
Thickness | 450–650 nm | — |
Thickness | 450–550 nm | — |
Thickness | 550–750 nm | — |
Thickness | 550–650 nm | — |
Thickness | 650–750 nm | — |
Thickness | 500–550 nm | — |
Thickness | 600–650 nm | — |
Thickness | 10–60 nm | — |
Thickness | 10–40 nm | — |
Thickness | 10–30 nm | — |
Thickness | 10–20 nm | — |
Thickness | 20–60 nm | — |
Thickness | 20–40 nm | — |
Thickness | 20–30 nm | — |
Thickness | 30–60 nm | — |
Thickness | 30–40 nm | — |
Thickness | 40–60 nm | — |
Thickness | 35–45 nm | — |
Thickness | 3–10 µm | — |
Thickness | 90–110 nm | — |
Thickness | 40–70 µm | — |
Thickness | 40–65 µm | — |
Thickness | 40–60 µm | — |
Thickness | 40–50 µm | — |
Thickness | ≤ 500 nm | — |
Thickness | ≤ 200 nm | — |
Thickness | ≤ 1 nm | — |
Thickness | ≤ 50 nm | — |
Thickness | ≤ 20 nm | — |
Thickness | ≤ 10 nm | — |
Thickness | ≤ 45 nm | — |
Thickness | ≤ 40 nm | — |
Thickness | ≤ 75 µm | — |
Thickness | ≤ 10 µm | — |
Thickness | 10–10 nm | — |
Cited non-patent literature · 1
