Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated droplet-epitaxy InAs quantum dot embedded in an InP host matrix, with a centered or nearly centered etch pit used as the high-symmetry reference geometry.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Simulated highly asymmetric InAs/InP droplet-epitaxy quantum dot with an etch pit displaced along the dot diagonal toward the corner of the base.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Materials
InAs
InAs
Studied Material
studied material
InP
InP
Substrate / Dielectric
substrate or dielectric
Simulations
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated droplet-epitaxy InAs quantum dot embedded in an InP host matrix, with a centered or nearly centered etch pit used as the high-symmetry reference geometry.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Simulated highly asymmetric InAs/InP droplet-epitaxy quantum dot with an etch pit displaced along the dot diagonal toward the corner of the base.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Materials
InAs
InAs
Studied Material
studied material
InP
InP
Substrate / Dielectric
substrate or dielectric
Simulations
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated droplet-epitaxy InAs quantum dot embedded in an InP host matrix, with a centered or nearly centered etch pit used as the high-symmetry reference geometry.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Simulated highly asymmetric InAs/InP droplet-epitaxy quantum dot with an etch pit displaced along the dot diagonal toward the corner of the base.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Materials
InAs
InAs
Studied Material
studied material
InP
InP
Substrate / Dielectric
substrate or dielectric
Simulations
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
Simulated droplet-epitaxy InAs quantum dot embedded in an InP host matrix, with a centered or nearly centered etch pit used as the high-symmetry reference geometry.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Simulated highly asymmetric InAs/InP droplet-epitaxy quantum dot with an etch pit displaced along the dot diagonal toward the corner of the base.
No measurements recorded
InAsStudied MaterialInPSubstrate / Dielectric
Materials
InAs
InAs
Studied Material
studied material
InP
InP
Substrate / Dielectric
substrate or dielectric
Simulations
Why these are connected
Related documents with shared materials, methods, properties, or citations.
Eight-band k·p envelope-function theory on a 1 nm real-space grid followed by configuration interaction (CI) calculations for the single-exciton manifold.
Settings
neglectspiezoelectric effects
symmetryC4v to lower-symmetry displaced-etch-pit geometries
dot height nm7
etch pit shapetruncated pyramid
grid spacing nm1
exciton manifoldlowest-energy single exciton states
dot base length nm24
etch pit height nm3
etch pit base length nm8
Conditions
modeled system:droplet epitaxy quantum dot with etch pit
geometry source:paper schematic and main text
displacement path:along diagonal toward corner of quantum dot base
Eight-band k·p envelope-function theory on a 1 nm real-space grid followed by configuration interaction (CI) calculations for the single-exciton manifold.
Settings
neglectspiezoelectric effects
symmetryC4v to lower-symmetry displaced-etch-pit geometries
dot height nm7
etch pit shapetruncated pyramid
grid spacing nm1
exciton manifoldlowest-energy single exciton states
dot base length nm24
etch pit height nm3
etch pit base length nm8
Conditions
modeled system:droplet epitaxy quantum dot with etch pit
geometry source:paper schematic and main text
displacement path:along diagonal toward corner of quantum dot base
Eight-band k·p envelope-function theory on a 1 nm real-space grid followed by configuration interaction (CI) calculations for the single-exciton manifold.
Settings
neglectspiezoelectric effects
symmetryC4v to lower-symmetry displaced-etch-pit geometries
dot height nm7
etch pit shapetruncated pyramid
grid spacing nm1
exciton manifoldlowest-energy single exciton states
dot base length nm24
etch pit height nm3
etch pit base length nm8
Conditions
modeled system:droplet epitaxy quantum dot with etch pit
geometry source:paper schematic and main text
displacement path:along diagonal toward corner of quantum dot base
Eight-band k·p envelope-function theory on a 1 nm real-space grid followed by configuration interaction (CI) calculations for the single-exciton manifold.
Settings
neglectspiezoelectric effects
symmetryC4v to lower-symmetry displaced-etch-pit geometries
dot height nm7
etch pit shapetruncated pyramid
grid spacing nm1
exciton manifoldlowest-energy single exciton states
dot base length nm24
etch pit height nm3
etch pit base length nm8
Conditions
modeled system:droplet epitaxy quantum dot with etch pit
geometry source:paper schematic and main text
displacement path:along diagonal toward corner of quantum dot base