Abstract

Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technologies. However, an outstanding challenge in h-BN is creating site-specific, stable, high emission rate single photon emitters with very low Huang-Rhys (HR) factor. Here, we discuss the photonic properties of site specific, isolated, stable quantum emitter that emit single photons with a high emission rate and unprecedented low HR value of 0.6±0.2 at room temperature. Scanning confocal image confirms site-specific single photon emitter with prominent zero-phonon line at ~578 nm with saturation photon counts of 3.5 × 105 counts/second. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ~0.25 with an emission lifetime of 2.46±0.1 ns. The importance of low-energy electron beam irradiation and subsequent annealing is emphasized to achieve stable single photon emitters.

Abstract

Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technologies. However, an outstanding challenge in h-BN is creating site-specific, stable, high emission rate single photon emitters with very low Huang-Rhys (HR) factor. Here, we discuss the photonic properties of site specific, isolated, stable quantum emitter that emit single photons with a high emission rate and unprecedented low HR value of 0.6±0.2 at room temperature. Scanning confocal image confirms site-specific single photon emitter with prominent zero-phonon line at ~578 nm with saturation photon counts of 3.5 × 105 counts/second. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ~0.25 with an emission lifetime of 2.46±0.1 ns. The importance of low-energy electron beam irradiation and subsequent annealing is emphasized to achieve stable single photon emitters.

Abstract

Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technologies. However, an outstanding challenge in h-BN is creating site-specific, stable, high emission rate single photon emitters with very low Huang-Rhys (HR) factor. Here, we discuss the photonic properties of site specific, isolated, stable quantum emitter that emit single photons with a high emission rate and unprecedented low HR value of 0.6±0.2 at room temperature. Scanning confocal image confirms site-specific single photon emitter with prominent zero-phonon line at ~578 nm with saturation photon counts of 3.5 × 105 counts/second. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ~0.25 with an emission lifetime of 2.46±0.1 ns. The importance of low-energy electron beam irradiation and subsequent annealing is emphasized to achieve stable single photon emitters.

Abstract

Development of stable room-temperature bright single-photon emitters using atomic defects in hexagonal-boron nitride flakes (h-BN) provides significant promises for quantum technologies. However, an outstanding challenge in h-BN is creating site-specific, stable, high emission rate single photon emitters with very low Huang-Rhys (HR) factor. Here, we discuss the photonic properties of site specific, isolated, stable quantum emitter that emit single photons with a high emission rate and unprecedented low HR value of 0.6±0.2 at room temperature. Scanning confocal image confirms site-specific single photon emitter with prominent zero-phonon line at ~578 nm with saturation photon counts of 3.5 × 105 counts/second. The second-order intensity-intensity correlation measurement shows an anti-bunching dip of ~0.25 with an emission lifetime of 2.46±0.1 ns. The importance of low-energy electron beam irradiation and subsequent annealing is emphasized to achieve stable single photon emitters.