Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Amit Bhunia; Pragya Joshi; Nitesh Singh; Biswanath Chakraborty; Rajesh V Nair

doi:10.48550/arxiv.2307.11433

Paper details

Research paper

Experimental Characterization

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Amit Bhunia, Pragya Joshi, Nitesh Singh, Biswanath Chakraborty et al.

2025·10.48550/arxiv.2307.11433·arXiv:2307.11433

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

3 preparations7 characterizations15 properties7 figures

Experimentalh-BNStudied Material

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

2 preparations1 property

Experimentalh-BNStudied Material

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

2 preparations1 property

Experimentalh-BNStudied Material

Materials

hexagonal boron nitride

h-BN

Studied Material

Also known as

h-BNlayered h-BN

studied material

SiO₂

Substrate / Dielectric

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ oxide layer thickness	285nm	SiO₂	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sam Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irra		—
Flake Thickness	lower thickness estimate	25nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Flake Thickness	upper thickness estimate	30nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Raman Peak	h-BN Raman mode	1365cm⁻¹	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	ZPL	578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	phonon sideband	626nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	ZPL	15nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	PSB red shift from ZPL	50nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Debye-Waller factor	0.5fraction	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Intensity	saturation photon counts	350000counts/s	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Fet On Off Ratio	g2(0) anti-bunching dip	0.25dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	emission lifetime	2.46ns	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	prominent ZPL	~578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Ir Band Position	IR band	1365cm⁻¹	h-BN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ oxide layer thickness	285nm	SiO₂	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sam Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irra		—
Flake Thickness	lower thickness estimate	25nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Flake Thickness	upper thickness estimate	30nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Raman Peak	h-BN Raman mode	1365cm⁻¹	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	ZPL	578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	phonon sideband	626nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	ZPL	15nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	PSB red shift from ZPL	50nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Debye-Waller factor	0.5fraction	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Intensity	saturation photon counts	350000counts/s	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Fet On Off Ratio	g2(0) anti-bunching dip	0.25dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	emission lifetime	2.46ns	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	prominent ZPL	~578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Ir Band Position	IR band	1365cm⁻¹	h-BN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ oxide layer thickness	285nm	SiO₂	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sam Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irra		—
Flake Thickness	lower thickness estimate	25nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Flake Thickness	upper thickness estimate	30nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Raman Peak	h-BN Raman mode	1365cm⁻¹	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	ZPL	578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	phonon sideband	626nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	ZPL	15nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	PSB red shift from ZPL	50nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Debye-Waller factor	0.5fraction	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Intensity	saturation photon counts	350000counts/s	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Fet On Off Ratio	g2(0) anti-bunching dip	0.25dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	emission lifetime	2.46ns	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	prominent ZPL	~578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Ir Band Position	IR band	1365cm⁻¹	h-BN	—	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Substrate Thickness	SiO₂ oxide layer thickness	285nm	SiO₂	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sam Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irra		—
Flake Thickness	lower thickness estimate	25nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Flake Thickness	upper thickness estimate	30nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Raman Peak	h-BN Raman mode	1365cm⁻¹	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	ZPL	578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	phonon sideband	626nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	ZPL	15nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	PSB red shift from ZPL	50nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Debye-Waller factor	0.5fraction	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Quantum Yield	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Intensity	saturation photon counts	350000counts/s	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Fet On Off Ratio	g2(0) anti-bunching dip	0.25dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Shift	emission lifetime	2.46ns	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
PL Peak	prominent ZPL	~578nm	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Pl Peak Fwhm	Huang-Rhys factor	0.6dimensionless	h-BN	Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO		—
Ir Band Position	IR band	1365cm⁻¹	h-BN	—	—	—

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Site-specific stable deterministic single photon emitters with low Huang-Rhys value in layered hexagonal boron nitride at room temperature

Samples

Few-layer h-BN flake mechanically exfoliated onto 285 nm SiO₂/Si, electron-beam irradiated, then annealed in argon; F₁ sample category.

Annealed-only few-layer h-BN flake on 285 nm SiO₂/Si; F₂ sample category.

Pristine few-layer h-BN flake on 285 nm SiO₂/Si with no irradiation or annealing; F₃ sample category.

Materials

Why these are connected

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties

Processing

Characterization

Properties