Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Michael Seidel; Yuhui Yang; Thorsten Schumacher; Yongheng Huo; Saimon Filipe Covre da Silva; Sven Rodt; Armando Rastelli; Stephan Reitzenstein; Markus Lippitz

doi:10.1021/acs.nanolett.3c03442

Paper details

Research paper

Experimental GrowthExperimental CharacterizationTheoretical

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Michael Seidel, Yuhui Yang, Thorsten Schumacher, Yongheng Huo et al.

arXiv preprint·2023·10.1021/acs.nanolett.3c03442·arXiv:2310.17481

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

3 preparations3 characterizations6 properties1 figure

ExperimentalGaAsStudied MaterialAlGaAsStudied MaterialAgStudied MaterialGaAsSubstrate / DielectricSiO₂-likeSubstrate / Dielectric

Materials

GaAs quantum dot

GaAs

Studied Material

Also known as

QDself-assembled epitaxial quantum dot

Variables

dimensionality= 0D

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	spacer thickness	130nm	SiO₂-like	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Nanowire Width	average width	50nm	Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	xQD relative to nanowire end	77nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	yQD relative to nanowire end	685nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Electron Beam Acceleration Voltage	CL excitation beam voltage	20kV	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Excitation Wavelength	laser wavelength	635nm	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	spacer thickness	130nm	SiO₂-like	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Nanowire Width	average width	50nm	Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	xQD relative to nanowire end	77nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	yQD relative to nanowire end	685nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Electron Beam Acceleration Voltage	CL excitation beam voltage	20kV	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Excitation Wavelength	laser wavelength	635nm	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	spacer thickness	130nm	SiO₂-like	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Nanowire Width	average width	50nm	Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	xQD relative to nanowire end	77nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	yQD relative to nanowire end	685nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Electron Beam Acceleration Voltage	CL excitation beam voltage	20kV	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Excitation Wavelength	laser wavelength	635nm	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—

Properties

Type	Label	Value	Material	Sample	Source
Substrate Thickness	spacer thickness	130nm	SiO₂-like	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Nanowire Width	average width	50nm	Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	xQD relative to nanowire end	77nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Sample Position	yQD relative to nanowire end	685nm	GaAs Ag	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Electron Beam Acceleration Voltage	CL excitation beam voltage	20kV	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—
Excitation Wavelength	laser wavelength	635nm	GaAs	Near-surface self-assembled GaAs quantum dots in AlGaAs barr	—

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

Intermediate Field Coupling of Single Epitaxial Quantum Dots to Plasmonic Waveguides

Samples

Near-surface self-assembled GaAs quantum dots in AlGaAs barriers on a GaAs substrate, overcoated with a spin-on-glass dielectric spacer and dispersed silver nanowires used as plasmonic waveguides.

Materials

Why these are connected

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Growth

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Growth

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Growth

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