Research paperExperimental CharacterizationOther ComputationalHigh emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-bandCornelius Nawrath, Raphael Joos, Sascha Kolatschek, Stephanie Bauer et al.2022·10.48550/arxiv.2207.12898·arXiv:2207.12898AbstractSeveral emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9 MHz for an excitation repetition rate of 228 MHz, while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. The compatibility with temperatures of up to 40 K further underlines the suitability for out-of-the-lab implementations.Read more
Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.4 characterizations16 properties9 figuresExperimentalInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / Dielectriccircular Bragg gratingStudied MaterialExpand
Reference quantum dot region on the same sample outside the circular Bragg grating structure.1 characterization2 properties1 figureInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / DielectricExpand
Research paperExperimental CharacterizationOther ComputationalHigh emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-bandCornelius Nawrath, Raphael Joos, Sascha Kolatschek, Stephanie Bauer et al.2022·10.48550/arxiv.2207.12898·arXiv:2207.12898AbstractSeveral emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9 MHz for an excitation repetition rate of 228 MHz, while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. The compatibility with temperatures of up to 40 K further underlines the suitability for out-of-the-lab implementations.Read more
Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.4 characterizations16 properties9 figuresExperimentalInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / Dielectriccircular Bragg gratingStudied MaterialExpand
Reference quantum dot region on the same sample outside the circular Bragg grating structure.1 characterization2 properties1 figureInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / DielectricExpand
Research paperExperimental CharacterizationOther ComputationalHigh emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-bandCornelius Nawrath, Raphael Joos, Sascha Kolatschek, Stephanie Bauer et al.2022·10.48550/arxiv.2207.12898·arXiv:2207.12898AbstractSeveral emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9 MHz for an excitation repetition rate of 228 MHz, while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. The compatibility with temperatures of up to 40 K further underlines the suitability for out-of-the-lab implementations.Read more
Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.4 characterizations16 properties9 figuresExperimentalInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / Dielectriccircular Bragg gratingStudied MaterialExpand
Reference quantum dot region on the same sample outside the circular Bragg grating structure.1 characterization2 properties1 figureInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / DielectricExpand
Research paperExperimental CharacterizationOther ComputationalHigh emission rate from a Purcell-enhanced, triggered source of pure single photons in the telecom C-bandCornelius Nawrath, Raphael Joos, Sascha Kolatschek, Stephanie Bauer et al.2022·10.48550/arxiv.2207.12898·arXiv:2207.12898AbstractSeveral emission features mark semiconductor quantum dots as promising non-classical light sources for prospective quantum implementations. Here we present an InAs/InGaAs/GaAs quantum dot emitting in the telecom C-band coupled to a circular Bragg grating. The Purcell enhancement of the emission enables a simultaneously high brightness with a fiber-coupled single-photon count rate of 13.9 MHz for an excitation repetition rate of 228 MHz, while maintaining a low multi-photon contribution of g(2)(0) = 0.0052. The compatibility with temperatures of up to 40 K further underlines the suitability for out-of-the-lab implementations.Read more
Device containing an InAs/InGaAs/GaAs quantum dot coupled to a circular Bragg grating; emission feature QD₁ studied in the C-band.4 characterizations16 properties9 figuresExperimentalInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / Dielectriccircular Bragg gratingStudied MaterialExpand
Reference quantum dot region on the same sample outside the circular Bragg grating structure.1 characterization2 properties1 figureInAsStudied MaterialInGaAsStudied MaterialGaAsSubstrate / DielectricExpand