Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel; Polychronis Tsipas; Peng Xiao; Mohammad Taghi Ahmadi; Abdalghani Daaoub; Hatef Sadeghi; Clivia M. Sotomayor Torres; Athanasios Dimoulas; Alexandros El Sachat

doi:10.1038/s41586-021-03867-8

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Research paper

Experimental GrowthExperimental CharacterizationComputed PhononTheoretical

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Emigdio Chavez-Angel, Polychronis Tsipas, Peng Xiao, Mohammad Taghi Ahmadi et al.

2025

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

1 preparation4 characterizations9 properties2 figures

ExperimentalBi₂Se₃Studied Material

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

1 preparation5 characterizations12 properties2 figures

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied Material

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

1 preparation3 characterizations5 properties2 figures

ExperimentalPdSe₂Studied MaterialCStudied Material

Bi₂Se₃ film on sapphire used for growth/characterization.

1 preparation

ExperimentalBi₂Se₃Studied Material

MoSe₂ film on sapphire used as part of the epitaxial growth set.

No measurements recorded

ExperimentalMoSe₂Studied Material

PdSe₂ film grown on monolayer graphene on SiC.

1 preparation1 characterization1 figure

ExperimentalPdSe₂Studied Material

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

1 preparation

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied MaterialSeCapping Or Contact

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

No measurements recorded

ExperimentalBi₂Se₃Studied MaterialAuCapping Or Contact

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

1 preparation4 characterizations9 properties2 figures

ExperimentalBi₂Se₃Studied Material

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

1 preparation5 characterizations12 properties2 figures

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied Material

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

1 preparation3 characterizations5 properties2 figures

ExperimentalPdSe₂Studied MaterialCStudied Material

Bi₂Se₃ film on sapphire used for growth/characterization.

1 preparation

ExperimentalBi₂Se₃Studied Material

MoSe₂ film on sapphire used as part of the epitaxial growth set.

No measurements recorded

ExperimentalMoSe₂Studied Material

PdSe₂ film grown on monolayer graphene on SiC.

1 preparation1 characterization1 figure

ExperimentalPdSe₂Studied Material

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

1 preparation

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied MaterialSeCapping Or Contact

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

No measurements recorded

ExperimentalBi₂Se₃Studied MaterialAuCapping Or Contact

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

1 preparation4 characterizations9 properties2 figures

ExperimentalBi₂Se₃Studied Material

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

1 preparation5 characterizations12 properties2 figures

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied Material

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

1 preparation3 characterizations5 properties2 figures

ExperimentalPdSe₂Studied MaterialCStudied Material

Bi₂Se₃ film on sapphire used for growth/characterization.

1 preparation

ExperimentalBi₂Se₃Studied Material

MoSe₂ film on sapphire used as part of the epitaxial growth set.

No measurements recorded

ExperimentalMoSe₂Studied Material

PdSe₂ film grown on monolayer graphene on SiC.

1 preparation1 characterization1 figure

ExperimentalPdSe₂Studied Material

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

1 preparation

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied MaterialSeCapping Or Contact

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

No measurements recorded

ExperimentalBi₂Se₃Studied MaterialAuCapping Or Contact

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

1 preparation4 characterizations9 properties2 figures

ExperimentalBi₂Se₃Studied Material

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

1 preparation5 characterizations12 properties2 figures

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied Material

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

1 preparation3 characterizations5 properties2 figures

ExperimentalPdSe₂Studied MaterialCStudied Material

Bi₂Se₃ film on sapphire used for growth/characterization.

1 preparation

ExperimentalBi₂Se₃Studied Material

MoSe₂ film on sapphire used as part of the epitaxial growth set.

No measurements recorded

ExperimentalMoSe₂Studied Material

PdSe₂ film grown on monolayer graphene on SiC.

1 preparation1 characterization1 figure

ExperimentalPdSe₂Studied Material

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

1 preparation

ExperimentalBi₂Se₃Studied MaterialMoSe₂Studied MaterialSeCapping Or Contact

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

No measurements recorded

ExperimentalBi₂Se₃Studied MaterialAuCapping Or Contact

Type	Label	Value	Material	Sample	Source
Raman Peak	E1g	37cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	E2g	132cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	71cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A2g	173cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	240.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Peak	A1g	241.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Intensity Ratio	IA11g/IA21g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Intensity Ratio	IE1g/IE2g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	intralayer Se-Se vibration	149.1cm⁻¹	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.059W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.01W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.012W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.06W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Resistance	total cross-plane thermal resistance	70m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Resistance	total cross-plane thermal resistance	202m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Contact Resistance	interface thermal resistance contribution	—	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Bi 4f5/2	163.31eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Se 3d5/2	53.71eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Mo 3d5/2	228.54eV	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Se 3d5/2	54.25eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d	0.86eV	Bi₂Se₃ MoSe₂ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Pd 3d5/2	336.44eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Xps Binding Energy	Pd 3d3/2	341.68eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—

Type	Label	Value	Material	Sample	Source
Raman Peak	E1g	37cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	E2g	132cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	71cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A2g	173cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	240.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Peak	A1g	241.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Intensity Ratio	IA11g/IA21g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Intensity Ratio	IE1g/IE2g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	intralayer Se-Se vibration	149.1cm⁻¹	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.059W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.01W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.012W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.06W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Resistance	total cross-plane thermal resistance	70m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Resistance	total cross-plane thermal resistance	202m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Contact Resistance	interface thermal resistance contribution	—	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Bi 4f5/2	163.31eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Se 3d5/2	53.71eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Mo 3d5/2	228.54eV	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Se 3d5/2	54.25eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d	0.86eV	Bi₂Se₃ MoSe₂ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Pd 3d5/2	336.44eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Xps Binding Energy	Pd 3d3/2	341.68eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—

Type	Label	Value	Material	Sample	Source
Raman Peak	E1g	37cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	E2g	132cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	71cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A2g	173cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	240.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Peak	A1g	241.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Intensity Ratio	IA11g/IA21g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Intensity Ratio	IE1g/IE2g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	intralayer Se-Se vibration	149.1cm⁻¹	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.059W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.01W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.012W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.06W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Resistance	total cross-plane thermal resistance	70m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Resistance	total cross-plane thermal resistance	202m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Contact Resistance	interface thermal resistance contribution	—	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Bi 4f5/2	163.31eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Se 3d5/2	53.71eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Mo 3d5/2	228.54eV	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Se 3d5/2	54.25eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d	0.86eV	Bi₂Se₃ MoSe₂ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Pd 3d5/2	336.44eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Xps Binding Energy	Pd 3d3/2	341.68eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—

Type	Label	Value	Material	Sample	Source
Raman Peak	E1g	37cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	E2g	132cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	71cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A2g	173cm⁻¹	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	A1g	240.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Peak	A1g	241.1cm⁻¹	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Raman Intensity Ratio	IA11g/IA21g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Intensity Ratio	IE1g/IE2g	—	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Raman Peak	intralayer Se-Se vibration	149.1cm⁻¹	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.059W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.01W/mK	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.012W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Conductivity	effective cross-plane thermal conductivity	0.06W/mK	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Thermal Resistance	total cross-plane thermal resistance	70m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Resistance	total cross-plane thermal resistance	202m2K/GW	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Thermal Contact Resistance	interface thermal resistance contribution	—	Bi₂Se₃ MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Bi 4f5/2	163.31eV	Bi₂Se₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Se 3d5/2	53.71eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	Bi₂Se₃ SrTiO₃	Epitaxial Bi₂Se₃ thin films grown on STO, with varying thick	—
Xps Binding Energy	Mo 3d5/2	228.54eV	MoSe₂	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Se 3d5/2	54.25eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d5/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d3/2	0.86eV	MoSe₂ Bi₂Se₃ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Spin Orbit Splitting	Se 3d	0.86eV	Bi₂Se₃ MoSe₂ SrTiO₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Bi 4f7/2	158eV	Bi₂Se₃	Bi₂Se₃/MoSe₂ superlattices grown on STO with different perio	—
Xps Binding Energy	Pd 3d5/2	336.44eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—
Xps Binding Energy	Pd 3d3/2	341.68eV	PdSe₂	Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer gr	—

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Engineering heat transport across epitaxial lattice-mismatched van der Waals heterointerfaces

Samples

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

Bi₂Se₃ film on sapphire used for growth/characterization.

MoSe₂ film on sapphire used as part of the epitaxial growth set.

PdSe₂ film grown on monolayer graphene on SiC.

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected

Samples

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

Bi₂Se₃ film on sapphire used for growth/characterization.

MoSe₂ film on sapphire used as part of the epitaxial growth set.

PdSe₂ film grown on monolayer graphene on SiC.

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected

Samples

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

Bi₂Se₃ film on sapphire used for growth/characterization.

MoSe₂ film on sapphire used as part of the epitaxial growth set.

PdSe₂ film grown on monolayer graphene on SiC.

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected

Samples

Epitaxial Bi₂Se₃ thin films grown on STO, with varying thickness from 1 to 20 QL.

Bi₂Se₃/MoSe₂ superlattices grown on STO with different periods (e.g. n=1 and n=3).

Graphene/PdSe₂ heterostructures grown on 4H-SiC/monolayer graphene.

Bi₂Se₃ film on sapphire used for growth/characterization.

MoSe₂ film on sapphire used as part of the epitaxial growth set.

PdSe₂ film grown on monolayer graphene on SiC.

Bi₂Se₃/MoSe₂ superlattice capped in situ with Se.

MBE-grown sample protected for FDTR with 100 nm Au transducer film.

Materials

Growth

Characterization

Properties

Simulations

Why these are connected