Research paperExperimental GrowthExperimental CharacterizationComputational DFTRemote epitaxial frustrationTaehwan Jung, Nicholas Hagopian, Anshu Sirohi, Quinn Campbell et al.arXiv preprint·2025·10.1021/acsami.1c10701·arXiv:2512.06986AbstractRemote epitaxy is often difficult to distinguish from alternative mechanisms such as pinhole-seeded or serial epitaxy. This work studies GdAuGe films grown on graphene/6H-SiC(0001) and combines experiments with DFT calculations to argue for a distinct phenomenon, remote epitaxial frustration. The authors report a few-atomic-layer-thick disordered interlayer at the GdAuGe/graphene interface and a 30° rotated epitaxial relationship, and attribute these signatures to competition among epitaxy to the remotely screened substrate, graphene, and graphene-induced interfacial reconstructions.Read more
20 nm GdAuGe film grown on buffer graphene/6H-SiC(0001).1 preparation4 characterizations4 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on epitaxial graphene/6H-SiC(0001).1 preparation4 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on H-intercalated graphene/6H-SiC(0001), used as an approximation to freestanding graphene.1 preparation3 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown directly on 6H-SiC(0001) without graphene.1 preparation2 characterizations1 property3 figuresExperimentalGdAuGeStudied MaterialSiCSubstrate / DielectricExpand
4 nm GdAuGe seed layer on buffer graphene/6H-SiC(0001) studied during annealing.1 preparation3 characterizations6 properties3 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTRemote epitaxial frustrationTaehwan Jung, Nicholas Hagopian, Anshu Sirohi, Quinn Campbell et al.arXiv preprint·2025·10.1021/acsami.1c10701·arXiv:2512.06986AbstractRemote epitaxy is often difficult to distinguish from alternative mechanisms such as pinhole-seeded or serial epitaxy. This work studies GdAuGe films grown on graphene/6H-SiC(0001) and combines experiments with DFT calculations to argue for a distinct phenomenon, remote epitaxial frustration. The authors report a few-atomic-layer-thick disordered interlayer at the GdAuGe/graphene interface and a 30° rotated epitaxial relationship, and attribute these signatures to competition among epitaxy to the remotely screened substrate, graphene, and graphene-induced interfacial reconstructions.Read more
20 nm GdAuGe film grown on buffer graphene/6H-SiC(0001).1 preparation4 characterizations4 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on epitaxial graphene/6H-SiC(0001).1 preparation4 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on H-intercalated graphene/6H-SiC(0001), used as an approximation to freestanding graphene.1 preparation3 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown directly on 6H-SiC(0001) without graphene.1 preparation2 characterizations1 property3 figuresExperimentalGdAuGeStudied MaterialSiCSubstrate / DielectricExpand
4 nm GdAuGe seed layer on buffer graphene/6H-SiC(0001) studied during annealing.1 preparation3 characterizations6 properties3 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTRemote epitaxial frustrationTaehwan Jung, Nicholas Hagopian, Anshu Sirohi, Quinn Campbell et al.arXiv preprint·2025·10.1021/acsami.1c10701·arXiv:2512.06986AbstractRemote epitaxy is often difficult to distinguish from alternative mechanisms such as pinhole-seeded or serial epitaxy. This work studies GdAuGe films grown on graphene/6H-SiC(0001) and combines experiments with DFT calculations to argue for a distinct phenomenon, remote epitaxial frustration. The authors report a few-atomic-layer-thick disordered interlayer at the GdAuGe/graphene interface and a 30° rotated epitaxial relationship, and attribute these signatures to competition among epitaxy to the remotely screened substrate, graphene, and graphene-induced interfacial reconstructions.Read more
20 nm GdAuGe film grown on buffer graphene/6H-SiC(0001).1 preparation4 characterizations4 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on epitaxial graphene/6H-SiC(0001).1 preparation4 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on H-intercalated graphene/6H-SiC(0001), used as an approximation to freestanding graphene.1 preparation3 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown directly on 6H-SiC(0001) without graphene.1 preparation2 characterizations1 property3 figuresExperimentalGdAuGeStudied MaterialSiCSubstrate / DielectricExpand
4 nm GdAuGe seed layer on buffer graphene/6H-SiC(0001) studied during annealing.1 preparation3 characterizations6 properties3 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
Research paperExperimental GrowthExperimental CharacterizationComputational DFTRemote epitaxial frustrationTaehwan Jung, Nicholas Hagopian, Anshu Sirohi, Quinn Campbell et al.arXiv preprint·2025·10.1021/acsami.1c10701·arXiv:2512.06986AbstractRemote epitaxy is often difficult to distinguish from alternative mechanisms such as pinhole-seeded or serial epitaxy. This work studies GdAuGe films grown on graphene/6H-SiC(0001) and combines experiments with DFT calculations to argue for a distinct phenomenon, remote epitaxial frustration. The authors report a few-atomic-layer-thick disordered interlayer at the GdAuGe/graphene interface and a 30° rotated epitaxial relationship, and attribute these signatures to competition among epitaxy to the remotely screened substrate, graphene, and graphene-induced interfacial reconstructions.Read more
20 nm GdAuGe film grown on buffer graphene/6H-SiC(0001).1 preparation4 characterizations4 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on epitaxial graphene/6H-SiC(0001).1 preparation4 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown on H-intercalated graphene/6H-SiC(0001), used as an approximation to freestanding graphene.1 preparation3 characterizations3 properties4 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
20 nm GdAuGe film grown directly on 6H-SiC(0001) without graphene.1 preparation2 characterizations1 property3 figuresExperimentalGdAuGeStudied MaterialSiCSubstrate / DielectricExpand
4 nm GdAuGe seed layer on buffer graphene/6H-SiC(0001) studied during annealing.1 preparation3 characterizations6 properties3 figuresExperimentalGdAuGeStudied MaterialCStudied MaterialSiCSubstrate / DielectricExpand
