Research paper
Experimental CharacterizationTheoreticalEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Identification | SLG | monolayer graphene identified by Raman spectrum | — | |||
| Fet Threshold Voltage | Dirac point / charge neutrality point | 42V | — | |||
| Fet Threshold Voltage | global charge neutrality point | 42V | — |
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STRUCTURES AND METHODS RELATING TO GRAPHENE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Identification | SLG | monolayer graphene identified by Raman spectrum | — | |||
| Fet Threshold Voltage | Dirac point / charge neutrality point | 42V | — | |||
| Fet Threshold Voltage | global charge neutrality point | 42V | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall effect in lightly hydrogenated graphene
New twisted van der Waals fabrication method based on strongly adhesive polymer
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Graphene Straintronics by Molecular Trapping
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
STRUCTURES AND METHODS RELATING TO GRAPHENE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Identification | SLG | monolayer graphene identified by Raman spectrum | — | |||
| Fet Threshold Voltage | Dirac point / charge neutrality point | 42V | — | |||
| Fet Threshold Voltage | global charge neutrality point | 42V | — |
Related documents with shared materials, methods, properties, or citations.
Quantum Hall effect in lightly hydrogenated graphene
New twisted van der Waals fabrication method based on strongly adhesive polymer
Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Graphene Straintronics by Molecular Trapping
Fermi Level Depinning in Two-Dimensional Materials Using a Fluorinated Bilayer Graphene Barrier
Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
STRUCTURES AND METHODS RELATING TO GRAPHENE
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
4 preparations2 characterizations3 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Raman Identification | SLG | monolayer graphene identified by Raman spectrum | — | |||
| Fet Threshold Voltage | Dirac point / charge neutrality point | 42V | — | |||
| Fet Threshold Voltage | global charge neutrality point | 42V | — |
Related documents with shared materials, methods, properties, or citations.
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Gate-tunable spin Hall effect in trilayer graphene/group-IV monochalcogenide van der Waals heterostructures
Ultimate charge transport regimes in doping-controlled graphene laminates: phonon-assisted processes revealed by the linear magnetoresistance
Graphene Straintronics by Molecular Trapping
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Ferromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Gapped Dirac materials and quantum valley currents in dual-gated hBN/bilayer-graphene heterostructures
Gate-tunable crossover between vortex-interaction and pinning dominated regimes in Josephson-coupled Lead-islands on graphene
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
STRUCTURES AND METHODS RELATING TO GRAPHENE