Patent
Atlas literature
Patent
US 9,548,364Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene heterostructure mounted on a substrate having: a first encapsulation layer; a second encapsulation layer; and a graphene layer positioned between the first encapsulation layer and the second encapsulation layer; wherein the first and second encapsulation layers are of hexagonal boron- nitride; wherein the interfaces between layers are substantially free from polymer residue and/or other contamination; and wherein the graphene component of the heterostructure has a charge carrier mobility greater than 100,000 SVG 14005476.02-16-2016.IKPY₆₅BPRXEAPX4.CLM.1.12.1052.1061.1244.1107.svg 0.153 0.64 Chemistry Black and white.
The graphene heterostructure according to claim 1, wherein the graphene layer lies directly next to the first encapsulation layer, and the second encapsulation layer lies directly next to the graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene layer is a single sheet of graphene.
The graphene heterostructure according to claim 1, wherein the graphene layer is shaped to form a structure.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes one or more contacts, each of the one or more contacts being positioned on one or more respective contact regions included in a structure formed in the graphene layer.
The graphene heterostructure according to claim 1, wherein the second encapsulation layer is aligned with respect to the graphene layer so that it covers only a 2 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb mar y 16, 2016 After Final Office Action of portion of the graphene layer, so that one or more contact regions included in a structure formed in the graphene layer are not covered by the second encapsulation layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes a substrate on which the first encapsulation layer is positioned.
The graphene heterostructure according to claim 1, wherein the heterostructure further comprises a second graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic component for use in an electronic circuit.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic device. 4 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb m ary 16, 2016 0 Final Office Action of 32
canceled
The method of making a graphene heterostructure, the method including: depositing a first encapsulation layer on a substrate; and depositing a graphene layer on a first encapsulation layer; and depositing a second encapsulation layer on the graphene layer, so that the graphene layer is positioned between the first encapsulation layer and the second encapsulation layer, wherein the first and second encapsulation layers are hexagonal boron nitride; and after depositing any one or more of the layers, cleaning the graphene heterostructure by annealing.
The method according to claim 10, wherein the first encapsulation layer is deposited on the substrate by exfoliation; and wherein the graphene layer is deposited on the first encapsulation layer using a precursor structure, the precursor structure including the graphene layer positioned on a carrier layer, the method including: depositing the precursor structure on the first encapsulation layer with the graphene layer facing the first encapsulation layer; and subsequently removing the carrier layer from the graphene layer.
canceled
canceled
The method of depositing a layer of material on a surface using a precursor structure, wherein the precursor structure includes the laver of material positioned on a carrier la y er, and wherein the precursor structure is made by: depositing a carrier layer on a sacrificial carrier layer; depositing the layer of material on the carrier layer; and removing the sacrificial carrier layer so as to separate [[a]] the precursor structure including the carrier layer and the layer of material from the sacrificial carrier layer; and wherein the precursor structure includes the layer of material positioned on a carrier layer, the method including: depositing the precursor structure on the surface with the layer of material facing the surface; and subsequently removing the carrier layer from the layer of material; wherein the material is either graphene or hexagonal boron nitride.
16-29. canceled
- 35. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene heterostructure
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge carrier mobility (claimed minimum) | ≥ 100000 | C |
charge carrier mobility at room temperature (described embodiment) | ≥ 100000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,548,364Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene heterostructure mounted on a substrate having: a first encapsulation layer; a second encapsulation layer; and a graphene layer positioned between the first encapsulation layer and the second encapsulation layer; wherein the first and second encapsulation layers are of hexagonal boron- nitride; wherein the interfaces between layers are substantially free from polymer residue and/or other contamination; and wherein the graphene component of the heterostructure has a charge carrier mobility greater than 100,000 SVG 14005476.02-16-2016.IKPY₆₅BPRXEAPX4.CLM.1.12.1052.1061.1244.1107.svg 0.153 0.64 Chemistry Black and white.
The graphene heterostructure according to claim 1, wherein the graphene layer lies directly next to the first encapsulation layer, and the second encapsulation layer lies directly next to the graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene layer is a single sheet of graphene.
The graphene heterostructure according to claim 1, wherein the graphene layer is shaped to form a structure.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes one or more contacts, each of the one or more contacts being positioned on one or more respective contact regions included in a structure formed in the graphene layer.
The graphene heterostructure according to claim 1, wherein the second encapsulation layer is aligned with respect to the graphene layer so that it covers only a 2 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb mar y 16, 2016 After Final Office Action of portion of the graphene layer, so that one or more contact regions included in a structure formed in the graphene layer are not covered by the second encapsulation layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes a substrate on which the first encapsulation layer is positioned.
The graphene heterostructure according to claim 1, wherein the heterostructure further comprises a second graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic component for use in an electronic circuit.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic device. 4 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb m ary 16, 2016 0 Final Office Action of 32
canceled
The method of making a graphene heterostructure, the method including: depositing a first encapsulation layer on a substrate; and depositing a graphene layer on a first encapsulation layer; and depositing a second encapsulation layer on the graphene layer, so that the graphene layer is positioned between the first encapsulation layer and the second encapsulation layer, wherein the first and second encapsulation layers are hexagonal boron nitride; and after depositing any one or more of the layers, cleaning the graphene heterostructure by annealing.
The method according to claim 10, wherein the first encapsulation layer is deposited on the substrate by exfoliation; and wherein the graphene layer is deposited on the first encapsulation layer using a precursor structure, the precursor structure including the graphene layer positioned on a carrier layer, the method including: depositing the precursor structure on the first encapsulation layer with the graphene layer facing the first encapsulation layer; and subsequently removing the carrier layer from the graphene layer.
canceled
canceled
The method of depositing a layer of material on a surface using a precursor structure, wherein the precursor structure includes the laver of material positioned on a carrier la y er, and wherein the precursor structure is made by: depositing a carrier layer on a sacrificial carrier layer; depositing the layer of material on the carrier layer; and removing the sacrificial carrier layer so as to separate [[a]] the precursor structure including the carrier layer and the layer of material from the sacrificial carrier layer; and wherein the precursor structure includes the layer of material positioned on a carrier layer, the method including: depositing the precursor structure on the surface with the layer of material facing the surface; and subsequently removing the carrier layer from the layer of material; wherein the material is either graphene or hexagonal boron nitride.
16-29. canceled
- 35. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene heterostructure
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge carrier mobility (claimed minimum) | ≥ 100000 | C |
charge carrier mobility at room temperature (described embodiment) | ≥ 100000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,548,364Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene heterostructure mounted on a substrate having: a first encapsulation layer; a second encapsulation layer; and a graphene layer positioned between the first encapsulation layer and the second encapsulation layer; wherein the first and second encapsulation layers are of hexagonal boron- nitride; wherein the interfaces between layers are substantially free from polymer residue and/or other contamination; and wherein the graphene component of the heterostructure has a charge carrier mobility greater than 100,000 SVG 14005476.02-16-2016.IKPY₆₅BPRXEAPX4.CLM.1.12.1052.1061.1244.1107.svg 0.153 0.64 Chemistry Black and white.
The graphene heterostructure according to claim 1, wherein the graphene layer lies directly next to the first encapsulation layer, and the second encapsulation layer lies directly next to the graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene layer is a single sheet of graphene.
The graphene heterostructure according to claim 1, wherein the graphene layer is shaped to form a structure.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes one or more contacts, each of the one or more contacts being positioned on one or more respective contact regions included in a structure formed in the graphene layer.
The graphene heterostructure according to claim 1, wherein the second encapsulation layer is aligned with respect to the graphene layer so that it covers only a 2 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb mar y 16, 2016 After Final Office Action of portion of the graphene layer, so that one or more contact regions included in a structure formed in the graphene layer are not covered by the second encapsulation layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes a substrate on which the first encapsulation layer is positioned.
The graphene heterostructure according to claim 1, wherein the heterostructure further comprises a second graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic component for use in an electronic circuit.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic device. 4 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb m ary 16, 2016 0 Final Office Action of 32
canceled
The method of making a graphene heterostructure, the method including: depositing a first encapsulation layer on a substrate; and depositing a graphene layer on a first encapsulation layer; and depositing a second encapsulation layer on the graphene layer, so that the graphene layer is positioned between the first encapsulation layer and the second encapsulation layer, wherein the first and second encapsulation layers are hexagonal boron nitride; and after depositing any one or more of the layers, cleaning the graphene heterostructure by annealing.
The method according to claim 10, wherein the first encapsulation layer is deposited on the substrate by exfoliation; and wherein the graphene layer is deposited on the first encapsulation layer using a precursor structure, the precursor structure including the graphene layer positioned on a carrier layer, the method including: depositing the precursor structure on the first encapsulation layer with the graphene layer facing the first encapsulation layer; and subsequently removing the carrier layer from the graphene layer.
canceled
canceled
The method of depositing a layer of material on a surface using a precursor structure, wherein the precursor structure includes the laver of material positioned on a carrier la y er, and wherein the precursor structure is made by: depositing a carrier layer on a sacrificial carrier layer; depositing the layer of material on the carrier layer; and removing the sacrificial carrier layer so as to separate [[a]] the precursor structure including the carrier layer and the layer of material from the sacrificial carrier layer; and wherein the precursor structure includes the layer of material positioned on a carrier layer, the method including: depositing the precursor structure on the surface with the layer of material facing the surface; and subsequently removing the carrier layer from the layer of material; wherein the material is either graphene or hexagonal boron nitride.
16-29. canceled
- 35. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene heterostructure
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge carrier mobility (claimed minimum) | ≥ 100000 | C |
charge carrier mobility at room temperature (described embodiment) | ≥ 100000 |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,548,364Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A graphene heterostructure mounted on a substrate having: a first encapsulation layer; a second encapsulation layer; and a graphene layer positioned between the first encapsulation layer and the second encapsulation layer; wherein the first and second encapsulation layers are of hexagonal boron- nitride; wherein the interfaces between layers are substantially free from polymer residue and/or other contamination; and wherein the graphene component of the heterostructure has a charge carrier mobility greater than 100,000 SVG 14005476.02-16-2016.IKPY₆₅BPRXEAPX4.CLM.1.12.1052.1061.1244.1107.svg 0.153 0.64 Chemistry Black and white.
The graphene heterostructure according to claim 1, wherein the graphene layer lies directly next to the first encapsulation layer, and the second encapsulation layer lies directly next to the graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene layer is a single sheet of graphene.
The graphene heterostructure according to claim 1, wherein the graphene layer is shaped to form a structure.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes one or more contacts, each of the one or more contacts being positioned on one or more respective contact regions included in a structure formed in the graphene layer.
The graphene heterostructure according to claim 1, wherein the second encapsulation layer is aligned with respect to the graphene layer so that it covers only a 2 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb mar y 16, 2016 After Final Office Action of portion of the graphene layer, so that one or more contact regions included in a structure formed in the graphene layer are not covered by the second encapsulation layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure includes a substrate on which the first encapsulation layer is positioned.
The graphene heterostructure according to claim 1, wherein the heterostructure further comprises a second graphene layer.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic component for use in an electronic circuit.
The graphene heterostructure according to claim 1, wherein the graphene heterostructure forms an electronic device. 4 ActiveUS 152022826v.1 Application No. 14/005,476 Docket No.: 2206057.00123US 1 Amendment dated Feb m ary 16, 2016 0 Final Office Action of 32
canceled
The method of making a graphene heterostructure, the method including: depositing a first encapsulation layer on a substrate; and depositing a graphene layer on a first encapsulation layer; and depositing a second encapsulation layer on the graphene layer, so that the graphene layer is positioned between the first encapsulation layer and the second encapsulation layer, wherein the first and second encapsulation layers are hexagonal boron nitride; and after depositing any one or more of the layers, cleaning the graphene heterostructure by annealing.
The method according to claim 10, wherein the first encapsulation layer is deposited on the substrate by exfoliation; and wherein the graphene layer is deposited on the first encapsulation layer using a precursor structure, the precursor structure including the graphene layer positioned on a carrier layer, the method including: depositing the precursor structure on the first encapsulation layer with the graphene layer facing the first encapsulation layer; and subsequently removing the carrier layer from the graphene layer.
canceled
canceled
The method of depositing a layer of material on a surface using a precursor structure, wherein the precursor structure includes the laver of material positioned on a carrier la y er, and wherein the precursor structure is made by: depositing a carrier layer on a sacrificial carrier layer; depositing the layer of material on the carrier layer; and removing the sacrificial carrier layer so as to separate [[a]] the precursor structure including the carrier layer and the layer of material from the sacrificial carrier layer; and wherein the precursor structure includes the layer of material positioned on a carrier layer, the method including: depositing the precursor structure on the surface with the layer of material facing the surface; and subsequently removing the carrier layer from the layer of material; wherein the material is either graphene or hexagonal boron nitride.
16-29. canceled
- 35. canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene heterostructure
Materials described outside the worked examples.
graphene
C
hexagonal boron nitride
BN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
charge carrier mobility (claimed minimum) | ≥ 100000 | C |
charge carrier mobility at room temperature (described embodiment) | ≥ 100000 |
Related documents with shared materials, methods, properties, or citations.
Thickness | ≥ 20 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 20 nm | — |
Thickness | ≥ 20 nm | — |
