| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | top hBN thickness | 35nm | — | |||
| Substrate Thickness | bottom hBN thickness | 34nm | — | |||
| Fet Mobility | electron mobility | 23m2/Vs | — | |||
| Fet Mobility | hole mobility | 19m2/Vs | — | |||
| Fet Carrier Concentration | residual carrier density | 36000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point gate voltage | 0.78V | — | |||
| Fet Sheet Resistance | maximum nonlocal resistance at large displacement field | kΩ order | — | |||
| Fet Sheet Resistance | quantum-limit nonlocal resistance scale | ~h/4e2 | — | |||
| Fet Sheet Resistance | Ohmic contribution negligible | 0ohm/sq | — | |||
| Fet Carrier Concentration | residual carrier density | ~3.6 × 10^10cm⁻² | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | top hBN thickness | 35nm | — | |||
| Substrate Thickness | bottom hBN thickness | 34nm | — | |||
| Fet Mobility | electron mobility | 23m2/Vs | — | |||
| Fet Mobility | hole mobility | 19m2/Vs | — | |||
| Fet Carrier Concentration | residual carrier density | 36000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point gate voltage | 0.78V | — | |||
| Fet Sheet Resistance | maximum nonlocal resistance at large displacement field | kΩ order | — | |||
| Fet Sheet Resistance | quantum-limit nonlocal resistance scale | ~h/4e2 | — | |||
| Fet Sheet Resistance | Ohmic contribution negligible | 0ohm/sq | — | |||
| Fet Carrier Concentration | residual carrier density | ~3.6 × 10^10cm⁻² | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | top hBN thickness | 35nm | — | |||
| Substrate Thickness | bottom hBN thickness | 34nm | — | |||
| Fet Mobility | electron mobility | 23m2/Vs | — | |||
| Fet Mobility | hole mobility | 19m2/Vs | — | |||
| Fet Carrier Concentration | residual carrier density | 36000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point gate voltage | 0.78V | — | |||
| Fet Sheet Resistance | maximum nonlocal resistance at large displacement field | kΩ order | — | |||
| Fet Sheet Resistance | quantum-limit nonlocal resistance scale | ~h/4e2 | — | |||
| Fet Sheet Resistance | Ohmic contribution negligible | 0ohm/sq | — | |||
| Fet Carrier Concentration | residual carrier density | ~3.6 × 10^10cm⁻² | — |
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | top hBN thickness | 35nm | — | |||
| Substrate Thickness | bottom hBN thickness | 34nm | — | |||
| Fet Mobility | electron mobility | 23m2/Vs | — | |||
| Fet Mobility | hole mobility | 19m2/Vs | — | |||
| Fet Carrier Concentration | residual carrier density | 36000000000cm⁻² | — | |||
| Fet Threshold Voltage | charge neutrality point gate voltage | 0.78V | — | |||
| Fet Sheet Resistance | maximum nonlocal resistance at large displacement field | kΩ order | — | |||
| Fet Sheet Resistance | quantum-limit nonlocal resistance scale | ~h/4e2 | — | |||
| Fet Sheet Resistance | Ohmic contribution negligible | 0ohm/sq | — | |||
| Fet Carrier Concentration | residual carrier density | ~3.6 × 10^10cm⁻² | — |
