Research paper
Experimental CharacterizationFerromagnetic Superconductivity in Two-dimensional Niobium Diselenide
Tingyu Qu, Shangjian Jin, Fuchen Hou, Deyi Fu et al.
2023
Copyright © 2026 Matter42. All rights reserved.
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations6 characterizations13 properties8 figures
5 preparations2 characterizations6 properties2 figures
8 preparations2 characterizations6 properties4 figures
7 preparations3 characterizations6 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conductivity Anomaly Temperature | TC₀ | 6.6K | — | |||
| Conductivity Anomaly Temperature | TBKT | 6.35K | — | |||
| Dopant Concentration | Co concentration | 3% | — | |||
| Resistance Change | zero-field resistance increase below TK | 40% | — | |||
| Tunnelling Magnetoresistance | TMR switching magnitude ΔR | 500ohm | — | |||
| Tunnelling Magnetoresistance | TMR saturation ratio ΔR/R | 10% | — | |||
| Sample Thickness | NbSe₂ flake thickness | 10-12nm | — | |||
| Thickness | h-BN thickness | 2-4layer | — | |||
| Anneal Temperature | post-transfer anneal | 210°C | — | |||
| Contact Thickness | Co/Ti contact thicknesses | 35/7.5nm | — | |||
| Beam Energy | STEM accelerating voltage | 300kV | — | |||
| Magnetic Field | transport magnet limit | 10T | — | |||
| Magnetic Field | in-plane field limit in dilution refrigerator | 7T | — | |||
| Magnetic Field | out-of-plane field limit in dilution refrigerator | 2T | — | |||
| Temperature | base temperature in dilution refrigerator | 40mK | — |
Related documents with shared materials, methods, properties, or citations.
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Origin of electrical noise near charge neutrality in dual gated graphene device
Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
Correlated carrier dynamics in a superconducting van der Waals heterostructure
Tuning the low-energy band structure in twisted bilayer WSe2
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Your clean graphene is still not clean
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Emergence of a Helical Metal in Rippled Ultrathin Topological Insulator Sb2Te3 on Graphene
Controlled fabrication of freestanding monolayer SiC by electron irradiation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations6 characterizations13 properties8 figures
5 preparations2 characterizations6 properties2 figures
8 preparations2 characterizations6 properties4 figures
7 preparations3 characterizations6 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conductivity Anomaly Temperature | TC₀ | 6.6K | — | |||
| Conductivity Anomaly Temperature | TBKT | 6.35K | — | |||
| Dopant Concentration | Co concentration | 3% | — | |||
| Resistance Change | zero-field resistance increase below TK | 40% | — | |||
| Tunnelling Magnetoresistance | TMR switching magnitude ΔR | 500ohm | — | |||
| Tunnelling Magnetoresistance | TMR saturation ratio ΔR/R | 10% | — | |||
| Sample Thickness | NbSe₂ flake thickness | 10-12nm | — | |||
| Thickness | h-BN thickness | 2-4layer | — | |||
| Anneal Temperature | post-transfer anneal | 210°C | — | |||
| Contact Thickness | Co/Ti contact thicknesses | 35/7.5nm | — | |||
| Beam Energy | STEM accelerating voltage | 300kV | — | |||
| Magnetic Field | transport magnet limit | 10T | — | |||
| Magnetic Field | in-plane field limit in dilution refrigerator | 7T | — | |||
| Magnetic Field | out-of-plane field limit in dilution refrigerator | 2T | — | |||
| Temperature | base temperature in dilution refrigerator | 40mK | — |
Related documents with shared materials, methods, properties, or citations.
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Origin of electrical noise near charge neutrality in dual gated graphene device
Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
Correlated carrier dynamics in a superconducting van der Waals heterostructure
Tuning the low-energy band structure in twisted bilayer WSe2
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Your clean graphene is still not clean
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Emergence of a Helical Metal in Rippled Ultrathin Topological Insulator Sb2Te3 on Graphene
Controlled fabrication of freestanding monolayer SiC by electron irradiation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations6 characterizations13 properties8 figures
5 preparations2 characterizations6 properties2 figures
8 preparations2 characterizations6 properties4 figures
7 preparations3 characterizations6 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conductivity Anomaly Temperature | TC₀ | 6.6K | — | |||
| Conductivity Anomaly Temperature | TBKT | 6.35K | — | |||
| Dopant Concentration | Co concentration | 3% | — | |||
| Resistance Change | zero-field resistance increase below TK | 40% | — | |||
| Tunnelling Magnetoresistance | TMR switching magnitude ΔR | 500ohm | — | |||
| Tunnelling Magnetoresistance | TMR saturation ratio ΔR/R | 10% | — | |||
| Sample Thickness | NbSe₂ flake thickness | 10-12nm | — | |||
| Thickness | h-BN thickness | 2-4layer | — | |||
| Anneal Temperature | post-transfer anneal | 210°C | — | |||
| Contact Thickness | Co/Ti contact thicknesses | 35/7.5nm | — | |||
| Beam Energy | STEM accelerating voltage | 300kV | — | |||
| Magnetic Field | transport magnet limit | 10T | — | |||
| Magnetic Field | in-plane field limit in dilution refrigerator | 7T | — | |||
| Magnetic Field | out-of-plane field limit in dilution refrigerator | 2T | — | |||
| Temperature | base temperature in dilution refrigerator | 40mK | — |
Related documents with shared materials, methods, properties, or citations.
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Origin of electrical noise near charge neutrality in dual gated graphene device
Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
Correlated carrier dynamics in a superconducting van der Waals heterostructure
Tuning the low-energy band structure in twisted bilayer WSe2
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Your clean graphene is still not clean
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Emergence of a Helical Metal in Rippled Ultrathin Topological Insulator Sb2Te3 on Graphene
Controlled fabrication of freestanding monolayer SiC by electron irradiation
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
8 preparations6 characterizations13 properties8 figures
5 preparations2 characterizations6 properties2 figures
8 preparations2 characterizations6 properties4 figures
7 preparations3 characterizations6 properties2 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Conductivity Anomaly Temperature | TC₀ | 6.6K | — | |||
| Conductivity Anomaly Temperature | TBKT | 6.35K | — | |||
| Dopant Concentration | Co concentration | 3% | — | |||
| Resistance Change | zero-field resistance increase below TK | 40% | — | |||
| Tunnelling Magnetoresistance | TMR switching magnitude ΔR | 500ohm | — | |||
| Tunnelling Magnetoresistance | TMR saturation ratio ΔR/R | 10% | — | |||
| Sample Thickness | NbSe₂ flake thickness | 10-12nm | — | |||
| Thickness | h-BN thickness | 2-4layer | — | |||
| Anneal Temperature | post-transfer anneal | 210°C | — | |||
| Contact Thickness | Co/Ti contact thicknesses | 35/7.5nm | — | |||
| Beam Energy | STEM accelerating voltage | 300kV | — | |||
| Magnetic Field | transport magnet limit | 10T | — | |||
| Magnetic Field | in-plane field limit in dilution refrigerator | 7T | — | |||
| Magnetic Field | out-of-plane field limit in dilution refrigerator | 2T | — | |||
| Temperature | base temperature in dilution refrigerator | 40mK | — |
Related documents with shared materials, methods, properties, or citations.
Terahertz magneto-nanoscopy of encapsulated monolayer graphene
Origin of electrical noise near charge neutrality in dual gated graphene device
Gate-tunable Exchange Bias and Voltage-controlled Magnetization Switching in a van der Waals Ferromagnet
Energy Gap Modulation in Proximitized Superconducting Puddles of Graphene
Correlated carrier dynamics in a superconducting van der Waals heterostructure
Tuning the low-energy band structure in twisted bilayer WSe2
Thickness-dependent Topological Phases and Flat Bands in Rhombohedral Multilayer Graphene
Bias Voltage Controlled Inversions of Tunneling Magnetoresistance in van der Waals Heterostructures Fe3GaTe2/hBN/Fe3GaTe2
Your clean graphene is still not clean
Few-Mode and Anisotropic Quantum Transport in InSb Nanoribbons Using an All-van der Waals Material-Based Gate
Emergence of a Helical Metal in Rippled Ultrathin Topological Insulator Sb2Te3 on Graphene
Controlled fabrication of freestanding monolayer SiC by electron irradiation