Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Mode Effective Index | LAS mode | 3.173 | — | |||
| Optical Mode Effective Index | TEB mode | 3.165 | — | |||
| Optical Mode Effective Index | FM mode | 3.428 | — | |||
| Optical Mode Effective Index | PAR mode | 3.313 | — | |||
| Coupling Efficiency | LAS-to-TEB vertical coupling efficiency | 28% | — | |||
| Photon Pair Rate | type-II SPDC photon pair rate | 170000000pairs/s | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — | — |
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Mode Effective Index | LAS mode | 3.173 | — | |||
| Optical Mode Effective Index | TEB mode | 3.165 | — | |||
| Optical Mode Effective Index | FM mode | 3.428 | — | |||
| Optical Mode Effective Index | PAR mode | 3.313 | — | |||
| Coupling Efficiency | LAS-to-TEB vertical coupling efficiency | 28% | — | |||
| Photon Pair Rate | type-II SPDC photon pair rate | 170000000pairs/s | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Sensitive and accurate femtosecond pulse characterization via two-photon absorption in Fabry-Pérot laser diodes
Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy
GALLIUM ARSENIDE HETEROJUNCTION SEMICONDUCTOR STRUCTURE
Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices
Thermal Noise Measurement Below the Standard Quantum Limit
An Optical Parametric Amplifier via χ(2) in AlGaAs Waveguides
High-β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots
METHOD OF MAKING HIGH FREQUENCY INGAP/GAAS HBTS
Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3)
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
A Versatile Chip-Scale Platform for High-Rate Entanglement Generation using an AlGaAs Microresonator Array
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Mode Effective Index | LAS mode | 3.173 | — | |||
| Optical Mode Effective Index | TEB mode | 3.165 | — | |||
| Optical Mode Effective Index | FM mode | 3.428 | — | |||
| Optical Mode Effective Index | PAR mode | 3.313 | — | |||
| Coupling Efficiency | LAS-to-TEB vertical coupling efficiency | 28% | — | |||
| Photon Pair Rate | type-II SPDC photon pair rate | 170000000pairs/s | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Sensitive and accurate femtosecond pulse characterization via two-photon absorption in Fabry-Pérot laser diodes
Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy
GALLIUM ARSENIDE HETEROJUNCTION SEMICONDUCTOR STRUCTURE
Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices
Thermal Noise Measurement Below the Standard Quantum Limit
An Optical Parametric Amplifier via χ(2) in AlGaAs Waveguides
High-β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots
METHOD OF MAKING HIGH FREQUENCY INGAP/GAAS HBTS
Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3)
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
A Versatile Chip-Scale Platform for High-Rate Entanglement Generation using an AlGaAs Microresonator Array
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
6 properties
No measurements recorded
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Optical Mode Effective Index | LAS mode | 3.173 | — | |||
| Optical Mode Effective Index | TEB mode | 3.165 | — | |||
| Optical Mode Effective Index | FM mode | 3.428 | — | |||
| Optical Mode Effective Index | PAR mode | 3.313 | — | |||
| Coupling Efficiency | LAS-to-TEB vertical coupling efficiency | 28% | — | |||
| Photon Pair Rate | type-II SPDC photon pair rate | 170000000pairs/s | — | |||
| Optical Band Gap | band gap | 1.42eV | — | — | — | — |
Related documents with shared materials, methods, properties, or citations.
Sensitive and accurate femtosecond pulse characterization via two-photon absorption in Fabry-Pérot laser diodes
Investigation of wetting layers in InAs/GaAs self-assembled nanostructures with reflectance difference spectroscopy
GALLIUM ARSENIDE HETEROJUNCTION SEMICONDUCTOR STRUCTURE
Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices
Thermal Noise Measurement Below the Standard Quantum Limit
An Optical Parametric Amplifier via χ(2) in AlGaAs Waveguides
High-β lasing in photonic-defect semiconductor-dielectric hybrid microresonators with embedded InGaAs quantum dots
METHOD OF MAKING HIGH FREQUENCY INGAP/GAAS HBTS
Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3)
Low-threshold lasing of optically pumped micropillar lasers with Al0.2Ga0.8As/Al0.9Ga0.1As distributed Bragg reflectors
A Versatile Chip-Scale Platform for High-Rate Entanglement Generation using an AlGaAs Microresonator Array
