A Versatile Chip-Scale Platform for High-Rate Entanglement Generation using an AlGaAs Microresonator Array

Yiming Pang; Joshua E. Castro; Trevor J. Steiner; Liao Duan; Noemi Tagliavacche; Massimo Borghi; Lillian Thiel; Nicholas Lewis; John E. Bowers; Marco Liscidini; Galan Moody

doi:10.48550/arxiv.2412.16360

Paper details

Research paper

Experimental Characterization

A Versatile Chip-Scale Platform for High-Rate Entanglement Generation using an AlGaAs Microresonator Array

Yiming Pang, Joshua E. Castro, Trevor J. Steiner, Liao Duan et al.

arXiv·2024·10.48550/arxiv.2412.16360·arXiv:2412.16360

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

AlGaAs-on-insulator photonic chip containing an array of 20 microresonators coupled to a single bus waveguide; fabricated with a 400 nm Al0.2Ga0.8As photonic layer bonded on a 3 µm SiO₂-on-silicon wafer.

1 characterization14 properties1 figure

ExperimentalAl0.2Ga0.8AsStudied Material

Materials

Al0.2Ga0.8As

Studied Material

Also known as

AlGaAs

studied material

SiO₂

Substrate / Dielectric

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

A Versatile Chip-Scale Platform for High-Rate Entanglement Generation using an AlGaAs Microresonator Array | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	free spectral range	650GHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	loaded quality factor (QL)	3.5	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	waveguide width	800nm	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	microresonator count	20	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	coupling loss	6.5dB/facet	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	internal pair generation efficiency	2.6GHz/mW₂	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	CAR	5000	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	time-energy entanglement visibility	95%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity	87%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity (background corrected)	90%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	detected frequency-bin entanglement rate	7000Hz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	on-chip pair rate corresponding to detected entanglement rate	70MHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	on-chip pair rate	30million pairs/s	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	pump power	250µW	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	free spectral range	650GHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	loaded quality factor (QL)	3.5	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	waveguide width	800nm	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	microresonator count	20	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	coupling loss	6.5dB/facet	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	internal pair generation efficiency	2.6GHz/mW₂	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	CAR	5000	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	time-energy entanglement visibility	95%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity	87%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity (background corrected)	90%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	detected frequency-bin entanglement rate	7000Hz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	on-chip pair rate corresponding to detected entanglement rate	70MHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	on-chip pair rate	30million pairs/s	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	pump power	250µW	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	free spectral range	650GHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	loaded quality factor (QL)	3.5	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	waveguide width	800nm	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	microresonator count	20	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	coupling loss	6.5dB/facet	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	internal pair generation efficiency	2.6GHz/mW₂	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	CAR	5000	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	time-energy entanglement visibility	95%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity	87%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity (background corrected)	90%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	detected frequency-bin entanglement rate	7000Hz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	on-chip pair rate corresponding to detected entanglement rate	70MHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	on-chip pair rate	30million pairs/s	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	pump power	250µW	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—

Properties

Type	Label	Value	Material	Sample	Source
Optical Band Gap	free spectral range	650GHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	loaded quality factor (QL)	3.5	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	waveguide width	800nm	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	microresonator count	20	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Optical Band Gap	coupling loss	6.5dB/facet	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	internal pair generation efficiency	2.6GHz/mW₂	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	CAR	5000	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	time-energy entanglement visibility	95%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity	87%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	Bell-state fidelity (background corrected)	90%	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	detected frequency-bin entanglement rate	7000Hz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet On Off Ratio	on-chip pair rate corresponding to detected entanglement rate	70MHz	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	on-chip pair rate	30million pairs/s	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—
Fet Mobility	pump power	250µW	Al0.2Ga0.8As	AlGaAs-on-insulator photonic chip containing an array of 20	—