Abstract

Semiconductor laser diodes are evaluated as two-photon-absorption detectors for interferometric characterization of femtosecond pulses. The study compares Fabry-Pérot laser-diode detectors based on AlGaAs and InGaAsP material systems against a silicon avalanche photodetector and a crystal-based autocorrelator. Autocorrelation traces are measured for pulses from sub-55 fs to 260 fs at 1.5 µm, and the effects of polarization, operating mode, bias, and load resistance on signal shape and intensity are analyzed. The devices enable characterization of pulses as short as 36 fs at 53 µW average power with low mean-square error.

Abstract

Semiconductor laser diodes are evaluated as two-photon-absorption detectors for interferometric characterization of femtosecond pulses. The study compares Fabry-Pérot laser-diode detectors based on AlGaAs and InGaAsP material systems against a silicon avalanche photodetector and a crystal-based autocorrelator. Autocorrelation traces are measured for pulses from sub-55 fs to 260 fs at 1.5 µm, and the effects of polarization, operating mode, bias, and load resistance on signal shape and intensity are analyzed. The devices enable characterization of pulses as short as 36 fs at 53 µW average power with low mean-square error.

Abstract

Semiconductor laser diodes are evaluated as two-photon-absorption detectors for interferometric characterization of femtosecond pulses. The study compares Fabry-Pérot laser-diode detectors based on AlGaAs and InGaAsP material systems against a silicon avalanche photodetector and a crystal-based autocorrelator. Autocorrelation traces are measured for pulses from sub-55 fs to 260 fs at 1.5 µm, and the effects of polarization, operating mode, bias, and load resistance on signal shape and intensity are analyzed. The devices enable characterization of pulses as short as 36 fs at 53 µW average power with low mean-square error.

Abstract

Semiconductor laser diodes are evaluated as two-photon-absorption detectors for interferometric characterization of femtosecond pulses. The study compares Fabry-Pérot laser-diode detectors based on AlGaAs and InGaAsP material systems against a silicon avalanche photodetector and a crystal-based autocorrelator. Autocorrelation traces are measured for pulses from sub-55 fs to 260 fs at 1.5 µm, and the effects of polarization, operating mode, bias, and load resistance on signal shape and intensity are analyzed. The devices enable characterization of pulses as short as 36 fs at 53 µW average power with low mean-square error.