Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3)

Paper

Atlas literature

Research paper

Experimental Characterization

I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, K. W. Baldwin et al.

arXiv preprint·2023·10.1103/PhysRevB.107.085301·arXiv:2302.02708

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

1 characterization7 properties3 figures

Experimentalp-GaAs/AlGaAs quantum well heterostructureStudied MaterialGaAsSubstrate / DielectricAlGaAsStudied Material

1 characterization7 properties3 figures

Experimentalp-GaAs/AlGaAs quantum well heterostructureStudied MaterialGaAsSubstrate / DielectricAlGaAsStudied Material

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Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3) | Matter42 Literature