Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3)

I. L. Drichko; I. Yu. Smirnov; A. V. Suslov; K. W. Baldwin; L. N. Pfeiffer; K. W. West; Y. M. Galperin

doi:10.1103/PhysRevB.107.085301

Paper details

Research paper

Experimental Characterization

Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3)

I. L. Drichko, I. Yu. Smirnov, A. V. Suslov, K. W. Baldwin et al.

arXiv preprint·2023·10.1103/PhysRevB.107.085301·arXiv:2302.02708

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quantum well, 100 nm undoped AlGaAs spacer layers, symmetrically carbon δ-doped on both sides, grown on a GaAs (100) substrate; measured via SAW transport.

1 characterization7 properties3 figures

Experimentalp-GaAs/AlGaAs quantum well heterostructureStudied MaterialGaAsSubstrate / DielectricAlGaAsStudied Material

High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quantum well, 100 nm undoped AlGaAs spacer layers, symmetrically carbon δ-doped on both sides, grown on a GaAs (100) substrate; measured via SAW transport.

1 characterization7 properties3 figures

Experimentalp-GaAs/AlGaAs quantum well heterostructureStudied MaterialGaAsSubstrate / DielectricAlGaAsStudied Material

Materials

p-GaAs/AlGaAs quantum well heterostructure

Studied Material

Also known as

2D hole system2DHSp-GaAs/AlGaAs

Variables

charge_carrier= holes

studied material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Coexistence of two hole phases in high-quality p-GaAs/AlGaAs in the vicinity of Landau level filling factors ν=1 and ν=(1/3) | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	p	1.191e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Carrier Concentration	p	1.221e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.451e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.761e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at B=0	13	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at B=0	12.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.7	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.9	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.6	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.4	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.2	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.1	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	p	1.191e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Carrier Concentration	p	1.221e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.451e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.761e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at B=0	13	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at B=0	12.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.7	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.9	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.6	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.4	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.2	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.1	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	p	1.191e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Carrier Concentration	p	1.221e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.451e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.761e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at B=0	13	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at B=0	12.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.7	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.9	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.6	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.4	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.2	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.1	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—

Properties

Type	Label	Value	Material	Sample	Source
Fet Carrier Concentration	p	1.191e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Carrier Concentration	p	1.221e11 cm⁻²	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.451e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Fet Mobility	μ	1.761e6 cm²/Vs	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at B=0	13	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at B=0	12.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1	18.7	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.9	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1	8.8	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.6	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	r_s at ν=1/3	32.4	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.2	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #1 with a 17 nm GaAs quan	—
Other	κ at ν=1/3	5.1	p-GaAs/AlGaAs quantum well heterostructure	High-mobility p-GaAs/AlGaAs sample #2 with a 17 nm GaAs quan	—