Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

L. Lazzari; J. Schuhmann; O. Meskine; M. Morassi; A. Lemaître; M.I. Amanti; F. Boeuf; F. Raineri; F. Baboux; S. Ducci

doi:10.48550/arxiv.2511.07128

Paper details

Research paper

Experimental CharacterizationTheoreticalComputational Multiscale

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

L. Lazzari, J. Schuhmann, O. Meskine, M. Morassi et al.

arXiv·2025·10.48550/arxiv.2511.07128·arXiv:2511.07128

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

1 preparation3 characterizations6 properties3 figures

ExperimentalAlGaAsStudied MaterialSiStudied MaterialGaAsSubstrate / DielectricSi/SiO₂/SiSubstrate / Dielectric

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

No measurements recorded

Simulated Supercell DftAlGaAsStudied Material

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

No measurements recorded

SimulatedAlGaAsStudied MaterialSiStudied Material

Materials

AlGaAs

Studied Material

Also known as

AlGaAs Bragg reflection waveguideAlGaAs source

studied material

silicon

Studied Material

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transmission Efficiency	TE/TM transmission efficiency in the coupling region	80%	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Transmission Bandwidth	transmission bandwidth	45nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Pair Generation Rate	internal PGR	1000000s⁻¹ mW^-1	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Coincidence To Accidental Ratio	CAR	600	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Wavelength	SPDC degeneracy wavelength	1560nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—
Wavelength	pump wavelength	780nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transmission Efficiency	TE/TM transmission efficiency in the coupling region	80%	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Transmission Bandwidth	transmission bandwidth	45nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Pair Generation Rate	internal PGR	1000000s⁻¹ mW^-1	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Coincidence To Accidental Ratio	CAR	600	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Wavelength	SPDC degeneracy wavelength	1560nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—
Wavelength	pump wavelength	780nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transmission Efficiency	TE/TM transmission efficiency in the coupling region	80%	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Transmission Bandwidth	transmission bandwidth	45nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Pair Generation Rate	internal PGR	1000000s⁻¹ mW^-1	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Coincidence To Accidental Ratio	CAR	600	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Wavelength	SPDC degeneracy wavelength	1560nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—
Wavelength	pump wavelength	780nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—

Properties

Type	Label	Value	Material	Sample	Condition	Source
Transmission Efficiency	TE/TM transmission efficiency in the coupling region	80%	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Transmission Bandwidth	transmission bandwidth	45nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Pair Generation Rate	internal PGR	1000000s⁻¹ mW^-1	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Coincidence To Accidental Ratio	CAR	600	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c		—
Wavelength	SPDC degeneracy wavelength	1560nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—
Wavelength	pump wavelength	780nm	AlGaAs Si	Heterogeneously integrated AlGaAs/SOI hybrid photonic chip c	—	—

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Biphoton state generation and engineering with bright hybrid III-V/Silicon photonic devices

Samples

Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.

Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.

Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.

Materials

Why these are connected

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations

Processing

Characterization

Properties

Simulations