Research paperExperimental CharacterizationTheoreticalComputational MultiscaleBiphoton state generation and engineering with bright hybrid III-V/Silicon photonic devicesL. Lazzari, J. Schuhmann, O. Meskine, M. Morassi et al.arXiv·2025·10.48550/arxiv.2511.07128·arXiv:2511.07128AbstractHybrid photonic circuits combining an AlGaAs photon-pair source with a silicon-on-insulator (SOI) circuit are demonstrated for bright biphoton generation and on-chip quantum state engineering. Photon pairs are generated in the C telecom band by spontaneous parametric down-conversion and transferred to the SOI chip via a multimode evanescent coupling scheme. The device achieves an internal pair generation rate above 10⁶ s⁻¹ mW^-1 and a coincidence-to-accidental ratio up to 600. A predictive model based on finite-difference eigenmode simulations is used to evaluate how coupling-region geometry modifies the joint spectral amplitude, and Hong-Ou-Mandel interferometry validates the model.Read more
Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.1 preparation3 characterizations6 properties3 figuresExperimentalAlGaAsStudied MaterialSiStudied MaterialGaAsSubstrate / DielectricSi/SiO₂/SiSubstrate / DielectricExpand
Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.No measurements recordedSimulated Supercell DftAlGaAsStudied MaterialExpand
Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.No measurements recordedSimulatedAlGaAsStudied MaterialSiStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalComputational MultiscaleBiphoton state generation and engineering with bright hybrid III-V/Silicon photonic devicesL. Lazzari, J. Schuhmann, O. Meskine, M. Morassi et al.arXiv·2025·10.48550/arxiv.2511.07128·arXiv:2511.07128AbstractHybrid photonic circuits combining an AlGaAs photon-pair source with a silicon-on-insulator (SOI) circuit are demonstrated for bright biphoton generation and on-chip quantum state engineering. Photon pairs are generated in the C telecom band by spontaneous parametric down-conversion and transferred to the SOI chip via a multimode evanescent coupling scheme. The device achieves an internal pair generation rate above 10⁶ s⁻¹ mW^-1 and a coincidence-to-accidental ratio up to 600. A predictive model based on finite-difference eigenmode simulations is used to evaluate how coupling-region geometry modifies the joint spectral amplitude, and Hong-Ou-Mandel interferometry validates the model.Read more
Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.1 preparation3 characterizations6 properties3 figuresExperimentalAlGaAsStudied MaterialSiStudied MaterialGaAsSubstrate / DielectricSi/SiO₂/SiSubstrate / DielectricExpand
Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.No measurements recordedSimulated Supercell DftAlGaAsStudied MaterialExpand
Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.No measurements recordedSimulatedAlGaAsStudied MaterialSiStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalComputational MultiscaleBiphoton state generation and engineering with bright hybrid III-V/Silicon photonic devicesL. Lazzari, J. Schuhmann, O. Meskine, M. Morassi et al.arXiv·2025·10.48550/arxiv.2511.07128·arXiv:2511.07128AbstractHybrid photonic circuits combining an AlGaAs photon-pair source with a silicon-on-insulator (SOI) circuit are demonstrated for bright biphoton generation and on-chip quantum state engineering. Photon pairs are generated in the C telecom band by spontaneous parametric down-conversion and transferred to the SOI chip via a multimode evanescent coupling scheme. The device achieves an internal pair generation rate above 10⁶ s⁻¹ mW^-1 and a coincidence-to-accidental ratio up to 600. A predictive model based on finite-difference eigenmode simulations is used to evaluate how coupling-region geometry modifies the joint spectral amplitude, and Hong-Ou-Mandel interferometry validates the model.Read more
Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.1 preparation3 characterizations6 properties3 figuresExperimentalAlGaAsStudied MaterialSiStudied MaterialGaAsSubstrate / DielectricSi/SiO₂/SiSubstrate / DielectricExpand
Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.No measurements recordedSimulated Supercell DftAlGaAsStudied MaterialExpand
Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.No measurements recordedSimulatedAlGaAsStudied MaterialSiStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalComputational MultiscaleBiphoton state generation and engineering with bright hybrid III-V/Silicon photonic devicesL. Lazzari, J. Schuhmann, O. Meskine, M. Morassi et al.arXiv·2025·10.48550/arxiv.2511.07128·arXiv:2511.07128AbstractHybrid photonic circuits combining an AlGaAs photon-pair source with a silicon-on-insulator (SOI) circuit are demonstrated for bright biphoton generation and on-chip quantum state engineering. Photon pairs are generated in the C telecom band by spontaneous parametric down-conversion and transferred to the SOI chip via a multimode evanescent coupling scheme. The device achieves an internal pair generation rate above 10⁶ s⁻¹ mW^-1 and a coincidence-to-accidental ratio up to 600. A predictive model based on finite-difference eigenmode simulations is used to evaluate how coupling-region geometry modifies the joint spectral amplitude, and Hong-Ou-Mandel interferometry validates the model.Read more
Heterogeneously integrated AlGaAs/SOI hybrid photonic chip consisting of a Bragg reflection waveguide photon-pair source adhesively bonded onto a prefabricated SOI circuit.1 preparation3 characterizations6 properties3 figuresExperimentalAlGaAsStudied MaterialSiStudied MaterialGaAsSubstrate / DielectricSi/SiO₂/SiSubstrate / DielectricExpand
Straight AlGaAs waveguide used as the reference system for JSA and modal-dispersion calculations.No measurements recordedSimulated Supercell DftAlGaAsStudied MaterialExpand
Hybrid AlGaAs/SOI coupling region modeled for JSA transformation and state engineering.No measurements recordedSimulatedAlGaAsStudied MaterialSiStudied MaterialExpand