Research paper
Experimental CharacterizationEach sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations6 properties3 figures
9 preparations3 characterizations9 properties4 figures
8 preparations2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ thickness | 150nm | — | |||
| Electrode Thickness | Ti/Au electrode stack | 5/50nm | — | |||
| Critical Temperature | Tc | 6.45K | — | |||
| Contact Resistance | contact + wiring resistance | 53ohm | — | |||
| Contact Resistance | background resistance range | 32-128ohm | — | |||
| Responsivity | responsivity | 49000V/W | — | |||
| Recovery Time | 1/e recovery time | 135ns | — | |||
| Timing Jitter | system timing jitter | 1103ps | — | |||
| Detection Efficiency | detection efficiency | 0.01% | — | |||
| Single Photon Detection Success Rate | optical pulse detection success rate | 33% | — | |||
| Critical Temperature | Tc | approximately 6.5K | — |
Related documents with shared materials, methods, properties, or citations.
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations6 properties3 figures
9 preparations3 characterizations9 properties4 figures
8 preparations2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ thickness | 150nm | — | |||
| Electrode Thickness | Ti/Au electrode stack | 5/50nm | — | |||
| Critical Temperature | Tc | 6.45K | — | |||
| Contact Resistance | contact + wiring resistance | 53ohm | — | |||
| Contact Resistance | background resistance range | 32-128ohm | — | |||
| Responsivity | responsivity | 49000V/W | — | |||
| Recovery Time | 1/e recovery time | 135ns | — | |||
| Timing Jitter | system timing jitter | 1103ps | — | |||
| Detection Efficiency | detection efficiency | 0.01% | — | |||
| Single Photon Detection Success Rate | optical pulse detection success rate | 33% | — | |||
| Critical Temperature | Tc | approximately 6.5K | — |
Related documents with shared materials, methods, properties, or citations.
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Building 3D superconductor-based Josephson junctions using a via transfer approach
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
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Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations6 properties3 figures
9 preparations3 characterizations9 properties4 figures
8 preparations2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ thickness | 150nm | — | |||
| Electrode Thickness | Ti/Au electrode stack | 5/50nm | — | |||
| Critical Temperature | Tc | 6.45K | — | |||
| Contact Resistance | contact + wiring resistance | 53ohm | — | |||
| Contact Resistance | background resistance range | 32-128ohm | — | |||
| Responsivity | responsivity | 49000V/W | — | |||
| Recovery Time | 1/e recovery time | 135ns | — | |||
| Timing Jitter | system timing jitter | 1103ps | — | |||
| Detection Efficiency | detection efficiency | 0.01% | — | |||
| Single Photon Detection Success Rate | optical pulse detection success rate | 33% | — | |||
| Critical Temperature | Tc | approximately 6.5K | — |
Related documents with shared materials, methods, properties, or citations.
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Building 3D superconductor-based Josephson junctions using a via transfer approach
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
High Q Hybrid Mie-Plasmonic Resonances in Van der Waals Nanoantennas on Gold Substrate
Each sample groups how it was prepared, characterized, and measured. Click a card to expand.
9 preparations2 characterizations6 properties3 figures
9 preparations3 characterizations9 properties4 figures
8 preparations2 characterizations3 properties3 figures
| Type | Label | Value | Material | Sample | Condition | Source |
|---|---|---|---|---|---|---|
| Substrate Thickness | SiO₂ thickness | 150nm | — | |||
| Electrode Thickness | Ti/Au electrode stack | 5/50nm | — | |||
| Critical Temperature | Tc | 6.45K | — | |||
| Contact Resistance | contact + wiring resistance | 53ohm | — | |||
| Contact Resistance | background resistance range | 32-128ohm | — | |||
| Responsivity | responsivity | 49000V/W | — | |||
| Recovery Time | 1/e recovery time | 135ns | — | |||
| Timing Jitter | system timing jitter | 1103ps | — | |||
| Detection Efficiency | detection efficiency | 0.01% | — | |||
| Single Photon Detection Success Rate | optical pulse detection success rate | 33% | — | |||
| Critical Temperature | Tc | approximately 6.5K | — |
Related documents with shared materials, methods, properties, or citations.
Understanding Disorder in Monolayer Graphene Devices with Gate-Defined Superlattices
Bilayer Graphene on hexagonal Boron Nitride and the Family of quantum MetaMaterial
Scanning Gate Microscopy Modulation of Supercurrent in Graphene Josephson Junctions
Building 3D superconductor-based Josephson junctions using a via transfer approach
Coupling of Klein-Andreev Resonant States in Bi2Sr2CaCu2O8+x-graphene-Bi2Sr2CaCu2O8+x Devices
Preserving Twist-Angle in Marginally Twisted Double-Bilayer Graphene Devices During Fabrication
Spontaneous localization at a potential saddle point from edge state reconstruction in a quantum Hall point contact
Decoupling thermoelectric coefficients of multilayer graphene by nanomeshing
Top-down integration of a hBN quantum emitter in a monolithic photonic waveguide
Ultrafast Opto-Electronic and Thermal Tuning of Third-Harmonic Generation in a Graphene Field Effect Transistor
Scalable CVD Graphene Field-Effect Transistor Platform for Viral Detection: Application to COVID-19
High Q Hybrid Mie-Plasmonic Resonances in Van der Waals Nanoantennas on Gold Substrate