Research paperExperimental CharacterizationTheoreticalElectronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETsWenhao Huang, Tathagata Paul, Kenji Watanabe, Takashi Taniguchi et al.arXiv·2022·10.48550/arxiv.2211.00398·arXiv:2211.00398AbstractElectron-electron interactions in graphene can produce correlated, momentum-conserving charge flow resembling classical Poiseuille flow. This work investigates electronic signatures of viscous transport in high-mobility h-BN encapsulated graphene field-effect transistors using current-bias and width-dependent transport measurements. The observed behavior indicates viscous effects from about 178 K up to room temperature, and finite element calculations are used to support the experimental findings and guide device design.Read more
High-mobility h-BN encapsulated graphene field-effect transistor used for current-bias and width-dependent transport measurements.1 preparation2 characterizations2 properties4 figuresExperimentalCStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETsWenhao Huang, Tathagata Paul, Kenji Watanabe, Takashi Taniguchi et al.arXiv·2022·10.48550/arxiv.2211.00398·arXiv:2211.00398AbstractElectron-electron interactions in graphene can produce correlated, momentum-conserving charge flow resembling classical Poiseuille flow. This work investigates electronic signatures of viscous transport in high-mobility h-BN encapsulated graphene field-effect transistors using current-bias and width-dependent transport measurements. The observed behavior indicates viscous effects from about 178 K up to room temperature, and finite element calculations are used to support the experimental findings and guide device design.Read more
High-mobility h-BN encapsulated graphene field-effect transistor used for current-bias and width-dependent transport measurements.1 preparation2 characterizations2 properties4 figuresExperimentalCStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETsWenhao Huang, Tathagata Paul, Kenji Watanabe, Takashi Taniguchi et al.arXiv·2022·10.48550/arxiv.2211.00398·arXiv:2211.00398AbstractElectron-electron interactions in graphene can produce correlated, momentum-conserving charge flow resembling classical Poiseuille flow. This work investigates electronic signatures of viscous transport in high-mobility h-BN encapsulated graphene field-effect transistors using current-bias and width-dependent transport measurements. The observed behavior indicates viscous effects from about 178 K up to room temperature, and finite element calculations are used to support the experimental findings and guide device design.Read more
High-mobility h-BN encapsulated graphene field-effect transistor used for current-bias and width-dependent transport measurements.1 preparation2 characterizations2 properties4 figuresExperimentalCStudied MaterialExpand
Research paperExperimental CharacterizationTheoreticalElectronic Poiseuille Flow in Hexagonal Boron Nitride Encapsulated Graphene FETsWenhao Huang, Tathagata Paul, Kenji Watanabe, Takashi Taniguchi et al.arXiv·2022·10.48550/arxiv.2211.00398·arXiv:2211.00398AbstractElectron-electron interactions in graphene can produce correlated, momentum-conserving charge flow resembling classical Poiseuille flow. This work investigates electronic signatures of viscous transport in high-mobility h-BN encapsulated graphene field-effect transistors using current-bias and width-dependent transport measurements. The observed behavior indicates viscous effects from about 178 K up to room temperature, and finite element calculations are used to support the experimental findings and guide device design.Read more
High-mobility h-BN encapsulated graphene field-effect transistor used for current-bias and width-dependent transport measurements.1 preparation2 characterizations2 properties4 figuresExperimentalCStudied MaterialExpand