Research paperExperimental GrowthExperimental CharacterizationHybrid-integrated dark-pulse microcombs towards visible light spectrumJinbao Long, Xiaoying Yan, Sanli Huang, Wei Sun et al.arXiv preprint·2025·arXiv:2505.00352AbstractLeveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si₃N₄ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with electronically detectable repetition rates down to 20 GHz, paving a route to efficient and compact atom-chip interfaces for spectroscopy, metrology and sensing.Read more
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.2 preparations3 characterizations3 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.2 preparations3 characterizations5 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationHybrid-integrated dark-pulse microcombs towards visible light spectrumJinbao Long, Xiaoying Yan, Sanli Huang, Wei Sun et al.arXiv preprint·2025·arXiv:2505.00352AbstractLeveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si₃N₄ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with electronically detectable repetition rates down to 20 GHz, paving a route to efficient and compact atom-chip interfaces for spectroscopy, metrology and sensing.Read more
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.2 preparations3 characterizations3 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.2 preparations3 characterizations5 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationHybrid-integrated dark-pulse microcombs towards visible light spectrumJinbao Long, Xiaoying Yan, Sanli Huang, Wei Sun et al.arXiv preprint·2025·arXiv:2505.00352AbstractLeveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si₃N₄ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with electronically detectable repetition rates down to 20 GHz, paving a route to efficient and compact atom-chip interfaces for spectroscopy, metrology and sensing.Read more
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.2 preparations3 characterizations3 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.2 preparations3 characterizations5 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Research paperExperimental GrowthExperimental CharacterizationHybrid-integrated dark-pulse microcombs towards visible light spectrumJinbao Long, Xiaoying Yan, Sanli Huang, Wei Sun et al.arXiv preprint·2025·arXiv:2505.00352AbstractLeveraging hybrid integration, we demonstrate dark-pulse formation at 780-nm wavelength band in integrated Si₃N₄ microresonators driven by high-power AlGaAs-based chip-scale lasers. The device outputs coherent frequency combs with electronically detectable repetition rates down to 20 GHz, paving a route to efficient and compact atom-chip interfaces for spectroscopy, metrology and sensing.Read more
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.2 preparations3 characterizations3 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand
Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.2 preparations3 characterizations5 properties3 figuresExperimentalSi₃N₄Studied MaterialAlGaAsStudied MaterialExpand