Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Jinbao Long; Xiaoying Yan; Sanli Huang; Wei Sun; Hao Tan; Zeying Zhong; Zhenyuan Shang; Jiahao Sun; Baoqi Shi; Chen Shen; Yi-Han Luo; Junqiu Liu

doi:10.1126/science.aan8083

Paper details

Research paper

Experimental GrowthExperimental Characterization

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Jinbao Long, Xiaoying Yan, Sanli Huang, Wei Sun et al.

arXiv preprint·2025·arXiv:2505.00352

Samples

Each sample groups how it was prepared, characterized, and measured. Click a card to expand.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

2 preparations3 characterizations3 properties3 figures

ExperimentalSi₃N₄Studied MaterialAlGaAsStudied Material

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

2 preparations3 characterizations5 properties3 figures

ExperimentalSi₃N₄Studied MaterialAlGaAsStudied Material

Materials

Si₃N₄

Studied Material

Also known as

silicon nitride

studied material

AlGaAs

Studied Material

Also known as

Why these are connected

Related documents with shared materials, methods, properties, or citations.

Hybrid-integrated dark-pulse microcombs towards visible light spectrum | Matter42 Literature

Properties

Type	Label	Value	Material	Sample	Source
XRD Peak	FSR	100.704GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	FSR	20.358GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	phase noise at 10 kHz offset	-67dBc/Hz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	microwave carrier frequency	20.36GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	RF amplitude noise	coherent dark-pulse train	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	spectral resolution comparison	VSA resolves narrow-spaced comb lines; OSA does not	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—

Properties

Type	Label	Value	Material	Sample	Source
XRD Peak	FSR	100.704GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	FSR	20.358GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	phase noise at 10 kHz offset	-67dBc/Hz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	microwave carrier frequency	20.36GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	RF amplitude noise	coherent dark-pulse train	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	spectral resolution comparison	VSA resolves narrow-spaced comb lines; OSA does not	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—

Properties

Type	Label	Value	Material	Sample	Source
XRD Peak	FSR	100.704GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	FSR	20.358GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	phase noise at 10 kHz offset	-67dBc/Hz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	microwave carrier frequency	20.36GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	RF amplitude noise	coherent dark-pulse train	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	spectral resolution comparison	VSA resolves narrow-spaced comb lines; OSA does not	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—

Properties

Type	Label	Value	Material	Sample	Source
XRD Peak	FSR	100.704GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	FSR	20.358GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
XRD Peak	GVD	normal / positive	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	phase noise at 10 kHz offset	-67dBc/Hz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	microwave carrier frequency	20.36GHz	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	RF amplitude noise	coherent dark-pulse train	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—
Transport	spectral resolution comparison	VSA resolves narrow-spaced comb lines; OSA does not	Si₃N₄	Hybrid-integrated microcomb module consisting of an AlGaAs-b	—

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

Hybrid-integrated dark-pulse microcombs towards visible light spectrum

Samples

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 100.7 GHz FSR device.

Hybrid-integrated microcomb module consisting of an AlGaAs-based FP laser edge-coupled to a Si₃N₄ microresonator chip; 20.36 GHz FSR device.

Materials

Why these are connected

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