Research paperExperimental CharacterizationExtremely weak sub-kelvin electron-phonon coupling in InAs on insulatorSebastiano Battisti, Giorgio De Simoni, Alessandro Braggio, Alessandro Paghi et al.arXiv·2024·10.1063/5.0225361·arXiv:2406.15040AbstractWe are proposing, as an ideal candidate for caloritronic devices operating at subKelvin temperatures, a hybrid superconductor-semiconductor platform named InAs on insulator (InAsOI). This heterostructure is made by doped InAs grown on an insulating buffer of InAlAs on a GaAs substrate. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low electron-phonon coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.Read more
Device 1 fabricated from the InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations2 characterizations8 properties2 figuresExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Device 2 fabricated from the same InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations1 characterization8 properties1 figureExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Research paperExperimental CharacterizationExtremely weak sub-kelvin electron-phonon coupling in InAs on insulatorSebastiano Battisti, Giorgio De Simoni, Alessandro Braggio, Alessandro Paghi et al.arXiv·2024·10.1063/5.0225361·arXiv:2406.15040AbstractWe are proposing, as an ideal candidate for caloritronic devices operating at subKelvin temperatures, a hybrid superconductor-semiconductor platform named InAs on insulator (InAsOI). This heterostructure is made by doped InAs grown on an insulating buffer of InAlAs on a GaAs substrate. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low electron-phonon coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.Read more
Device 1 fabricated from the InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations2 characterizations8 properties2 figuresExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Device 2 fabricated from the same InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations1 characterization8 properties1 figureExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Research paperExperimental CharacterizationExtremely weak sub-kelvin electron-phonon coupling in InAs on insulatorSebastiano Battisti, Giorgio De Simoni, Alessandro Braggio, Alessandro Paghi et al.arXiv·2024·10.1063/5.0225361·arXiv:2406.15040AbstractWe are proposing, as an ideal candidate for caloritronic devices operating at subKelvin temperatures, a hybrid superconductor-semiconductor platform named InAs on insulator (InAsOI). This heterostructure is made by doped InAs grown on an insulating buffer of InAlAs on a GaAs substrate. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low electron-phonon coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.Read more
Device 1 fabricated from the InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations2 characterizations8 properties2 figuresExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Device 2 fabricated from the same InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations1 characterization8 properties1 figureExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Research paperExperimental CharacterizationExtremely weak sub-kelvin electron-phonon coupling in InAs on insulatorSebastiano Battisti, Giorgio De Simoni, Alessandro Braggio, Alessandro Paghi et al.arXiv·2024·10.1063/5.0225361·arXiv:2406.15040AbstractWe are proposing, as an ideal candidate for caloritronic devices operating at subKelvin temperatures, a hybrid superconductor-semiconductor platform named InAs on insulator (InAsOI). This heterostructure is made by doped InAs grown on an insulating buffer of InAlAs on a GaAs substrate. Our work discusses the advantages of the InAsOI platform, which are based on the significantly low electron-phonon coupling measured compared to all-metallic state-of-the-art caloritronic devices. Our structure demonstrates values of the e-ph coupling constant up to two orders of magnitude smaller than typical values in metallic structures.Read more
Device 1 fabricated from the InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations2 characterizations8 properties2 figuresExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
Device 2 fabricated from the same InAsOI heterostructure with a Josephson junction and Joule heaters.5 preparations1 characterization8 properties1 figureExperimentalInAsStudied MaterialInAlAsSubstrate / DielectricGaAsSubstrate / DielectricExpand
