Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst; Simon P. Cooil; Anna Cecilie Åsland; Jinbang Hu; Ayaz Ali; Takashi Taniguchi; Kenji Watanabe; Branson D. Belle; Bodil Holst; Jerzy T. Sadowski; Federico Mazzola; Justin W. Wells

doi:10.1021/acs.nanolett.3c02086

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Research paper

Experimental CharacterizationTheoretical

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Håkon I. Røst, Simon P. Cooil, Anna Cecilie Åsland, Jinbang Hu et al.

arXiv·2023·10.1021/acs.nanolett.3c02086·arXiv:2308.13846

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

3 preparations4 characterizations3 properties2 figures

ExperimentalhBNStudied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

3 preparations4 characterizations3 properties2 figures

ExperimentalhBNStudied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

3 preparations4 characterizations3 properties2 figures

ExperimentalhBNStudied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

3 preparations4 characterizations3 properties2 figures

ExperimentalhBNStudied MaterialCSubstrate / DielectricSiCSubstrate / Dielectric

Type	Label	Value	Material	Sample	Source
Layer Count	hBN layers	8	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Sample Lateral Size	flake size	35 x 20um	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Electronic State Broadening Energy Offset	broadening maximum relative to hBN vH singularity	175meV	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—

Type	Label	Value	Material	Sample	Source
Layer Count	hBN layers	8	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Sample Lateral Size	flake size	35 x 20um	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Electronic State Broadening Energy Offset	broadening maximum relative to hBN vH singularity	175meV	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—

Type	Label	Value	Material	Sample	Source
Layer Count	hBN layers	8	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Sample Lateral Size	flake size	35 x 20um	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Electronic State Broadening Energy Offset	broadening maximum relative to hBN vH singularity	175meV	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—

Type	Label	Value	Material	Sample	Source
Layer Count	hBN layers	8	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Sample Lateral Size	flake size	35 x 20um	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—
Electronic State Broadening Energy Offset	broadening maximum relative to hBN vH singularity	175meV	hBN	Few-layer hBN flake exfoliated from bulk and transferred ont	—

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Phonon-Mediated Quasiparticle Lifetime Renormalizations in Few-Layer Hexagonal Boron Nitride

Samples

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

Materials

Processing

Characterization

Properties

Why these are connected

Samples

Few-layer hBN flake exfoliated from bulk and transferred onto epitaxial graphene on 6H-SiC(0001); the analyzed region was identified as 8-layer hBN on mostly monolayer graphene substrate.

Materials

Processing

Characterization

Properties

Why these are connected