Patent
US 10,663,766GRAPHENE-BASED PLASMONIC SLOT ELECTRO-OPTICAL MODULATOR
Zhizhen MA
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,663,766Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 4C. This "OFF" configuration is optically lossy, while the "ON" configuration is substantially non-lossy. The first graphene layer 104a' and the second …
FIG. 5 A, the waveguide 502, comprised of a semiconductor like silicon, is covered by an oxide layer 504. A graphene layer 506 rests on top of the oxide layer …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. The electro-optical modulator of claim 1, wherein the modulator is comprised of a second graphene layer disposed above the first graphene layer, such that at least a portion of the dielectric spacer is sandwiched between the first graphene layer and the second graphene layer. Currently amended
(Currently A mended) The e l ectro-optical modulator of clai m 2, where the modulator is c omprised of a third graphene layer and a fou rt h graphene layer, wherein the first graphene layer, the second graphene layer, the third graphene layer, a nd the fourth gr a phene layer enclose the first m etal layer, the second metal layer, and the plasmonic slot, wherein the dielectric spacer comprises a first dielectric spacer, and further comprising a second dielectric spacer, at least a portion of said seco nd dielectric s p acer between the second graphene layer and the third graphene layer and a third dielectric spacer, at least a portion of said third dielectric spacer between the th ird graphene layer and the fourth graphene layer. Currently amended
The electro-optical modulator of claim 3, wherein the first contact and the second contact are each comprised of a top lay er of a conductive metal a nd a bottom adhesive layer comprised of chromium. Previously presented
The modulator of claim 3, wherein the first, second, third and fourth graphene layers each have a thickness of one atom. Previously presented
The electro-optical modulator of claim 1, wherein the plasmonic slot has a height of 50- 1 00 n m and a width of 50- 1 00 n m. Currently amended
6. Canceled
7. The e l ectro-optical modulator of claim 1, wherein the first graphene layer has a selectively tuned F ermi level, and said gating voltage controls energy of the Fermi level of said first grapb ene layer to place s ai d first graphenelayer in the state of liglt absorption or the stat e of light transparency. Currently amended
Canceled
The electr o-opt ical modulator of claim 1, wherein the dielectric spacer is comprised of silicon dioxide (SiO 2), alu m inum oxide (A I 2 O), or hafnium oxide (HfO 2). Original
The electro-optical modulator of claim 1, wherein the first metal layer and the second layer are metal blocks fabricated by a single lithography and deposition step. Original
The electr o- optical modulator of clai m 1, wherein t h e substrate layer is comprised of Si, i e, InAs, InG aAs, or I nP. Original
A n electro-optical modulator comprising: a substrate; a first gr a phene layer positioned on the substrate and having a first contact; a first dielectric spa c er positioned on the first graphene layer; a second graphene layer positioned on the first dielectric spacer spaced fro m the first grap h ene layer with at least a portion of the first dielectric spacer positioned between the first and second graphene layers, said second graphene layer having a second contact; a first block and a second block positioned on the second graphene layer and having an optical waveguide sl o t therebet w een; and a voltage source providing a gating voltage applied across the first contact and the second contact to control the first and second g raphene layers to select between an absorptive state and a tran sparent tate to co n tro l an optical signal passi ng through the optical waveguide slot. Currently amended
The mod u lator of claim 13, f u rther co m prising: a second dielectric s pacer posit i oned on the second graphene layer; a third gr a phe n e layer positioned on the s econd dielectric spacer and coupled to the first gr aphene layer and extending over a top of the first and/or second block, with at least a portion of the second dielectric spa c er positioned between the second a nd third graphene layers; a third dielectric spacer positioned on the third graphene layer; and a fourth graphene layer positioned on the third dielectric s pacer and coupled to the second graphene layer and extending over the top of the first and/or s econd block, with at l east a po rt ion of the third dielectric spacer positioned between the third and fourth graphene layers. Currently amended
The modulator of claim 1, w herein light passing through the plas m onic slot is has a wavelength within the telecommunication b and. Previously presented
1 7. The modulator of claim 1 6, wherein the w a velength is 1310 nm or 1550 nm. Previously presented
The m odulator of claim 1, wherein the graphene structure comprises a lattice. Previously presented
The modulator of claim 1, wherein the graphene structure comprise a hexagonal lattice. Previously presented
(N ew) The e l ectr o -optical modulator of claim 1, wherein said graphene structure creates the electric fie ld that enha nc e the l igh t- mat ter-i nteractio n s by a surface plasmonic polarit o ns. New
Layer stacks claimed or described, ordered top of device to substrate.
single-layer graphene plasmonic slot electro-optical modulator
quad-layer graphene plasmonic slot electro-optical modulator
Materials described outside the worked examples.
graphene
C
dielectric spacer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
VCSEL WITH INTEGRATED ELECTRICALLY MODULATED INTRA-CAVITY GRAPHENE ABSORBER
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
Patent
Atlas literature
Patent
US 10,663,766Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 4C. This "OFF" configuration is optically lossy, while the "ON" configuration is substantially non-lossy. The first graphene layer 104a' and the second …
FIG. 5 A, the waveguide 502, comprised of a semiconductor like silicon, is covered by an oxide layer 504. A graphene layer 506 rests on top of the oxide layer …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. The electro-optical modulator of claim 1, wherein the modulator is comprised of a second graphene layer disposed above the first graphene layer, such that at least a portion of the dielectric spacer is sandwiched between the first graphene layer and the second graphene layer. Currently amended
(Currently A mended) The e l ectro-optical modulator of clai m 2, where the modulator is c omprised of a third graphene layer and a fou rt h graphene layer, wherein the first graphene layer, the second graphene layer, the third graphene layer, a nd the fourth gr a phene layer enclose the first m etal layer, the second metal layer, and the plasmonic slot, wherein the dielectric spacer comprises a first dielectric spacer, and further comprising a second dielectric spacer, at least a portion of said seco nd dielectric s p acer between the second graphene layer and the third graphene layer and a third dielectric spacer, at least a portion of said third dielectric spacer between the th ird graphene layer and the fourth graphene layer. Currently amended
The electro-optical modulator of claim 3, wherein the first contact and the second contact are each comprised of a top lay er of a conductive metal a nd a bottom adhesive layer comprised of chromium. Previously presented
The modulator of claim 3, wherein the first, second, third and fourth graphene layers each have a thickness of one atom. Previously presented
The electro-optical modulator of claim 1, wherein the plasmonic slot has a height of 50- 1 00 n m and a width of 50- 1 00 n m. Currently amended
6. Canceled
7. The e l ectro-optical modulator of claim 1, wherein the first graphene layer has a selectively tuned F ermi level, and said gating voltage controls energy of the Fermi level of said first grapb ene layer to place s ai d first graphenelayer in the state of liglt absorption or the stat e of light transparency. Currently amended
Canceled
The electr o-opt ical modulator of claim 1, wherein the dielectric spacer is comprised of silicon dioxide (SiO 2), alu m inum oxide (A I 2 O), or hafnium oxide (HfO 2). Original
The electro-optical modulator of claim 1, wherein the first metal layer and the second layer are metal blocks fabricated by a single lithography and deposition step. Original
The electr o- optical modulator of clai m 1, wherein t h e substrate layer is comprised of Si, i e, InAs, InG aAs, or I nP. Original
A n electro-optical modulator comprising: a substrate; a first gr a phene layer positioned on the substrate and having a first contact; a first dielectric spa c er positioned on the first graphene layer; a second graphene layer positioned on the first dielectric spacer spaced fro m the first grap h ene layer with at least a portion of the first dielectric spacer positioned between the first and second graphene layers, said second graphene layer having a second contact; a first block and a second block positioned on the second graphene layer and having an optical waveguide sl o t therebet w een; and a voltage source providing a gating voltage applied across the first contact and the second contact to control the first and second g raphene layers to select between an absorptive state and a tran sparent tate to co n tro l an optical signal passi ng through the optical waveguide slot. Currently amended
The mod u lator of claim 13, f u rther co m prising: a second dielectric s pacer posit i oned on the second graphene layer; a third gr a phe n e layer positioned on the s econd dielectric spacer and coupled to the first gr aphene layer and extending over a top of the first and/or second block, with at least a portion of the second dielectric spa c er positioned between the second a nd third graphene layers; a third dielectric spacer positioned on the third graphene layer; and a fourth graphene layer positioned on the third dielectric s pacer and coupled to the second graphene layer and extending over the top of the first and/or s econd block, with at l east a po rt ion of the third dielectric spacer positioned between the third and fourth graphene layers. Currently amended
The modulator of claim 1, w herein light passing through the plas m onic slot is has a wavelength within the telecommunication b and. Previously presented
1 7. The modulator of claim 1 6, wherein the w a velength is 1310 nm or 1550 nm. Previously presented
The m odulator of claim 1, wherein the graphene structure comprises a lattice. Previously presented
The modulator of claim 1, wherein the graphene structure comprise a hexagonal lattice. Previously presented
(N ew) The e l ectr o -optical modulator of claim 1, wherein said graphene structure creates the electric fie ld that enha nc e the l igh t- mat ter-i nteractio n s by a surface plasmonic polarit o ns. New
Layer stacks claimed or described, ordered top of device to substrate.
single-layer graphene plasmonic slot electro-optical modulator
quad-layer graphene plasmonic slot electro-optical modulator
Materials described outside the worked examples.
graphene
C
dielectric spacer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
VCSEL WITH INTEGRATED ELECTRICALLY MODULATED INTRA-CAVITY GRAPHENE ABSORBER
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
Patent
Atlas literature
Patent
US 10,663,766Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 4C. This "OFF" configuration is optically lossy, while the "ON" configuration is substantially non-lossy. The first graphene layer 104a' and the second …
FIG. 5 A, the waveguide 502, comprised of a semiconductor like silicon, is covered by an oxide layer 504. A graphene layer 506 rests on top of the oxide layer …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. The electro-optical modulator of claim 1, wherein the modulator is comprised of a second graphene layer disposed above the first graphene layer, such that at least a portion of the dielectric spacer is sandwiched between the first graphene layer and the second graphene layer. Currently amended
(Currently A mended) The e l ectro-optical modulator of clai m 2, where the modulator is c omprised of a third graphene layer and a fou rt h graphene layer, wherein the first graphene layer, the second graphene layer, the third graphene layer, a nd the fourth gr a phene layer enclose the first m etal layer, the second metal layer, and the plasmonic slot, wherein the dielectric spacer comprises a first dielectric spacer, and further comprising a second dielectric spacer, at least a portion of said seco nd dielectric s p acer between the second graphene layer and the third graphene layer and a third dielectric spacer, at least a portion of said third dielectric spacer between the th ird graphene layer and the fourth graphene layer. Currently amended
The electro-optical modulator of claim 3, wherein the first contact and the second contact are each comprised of a top lay er of a conductive metal a nd a bottom adhesive layer comprised of chromium. Previously presented
The modulator of claim 3, wherein the first, second, third and fourth graphene layers each have a thickness of one atom. Previously presented
The electro-optical modulator of claim 1, wherein the plasmonic slot has a height of 50- 1 00 n m and a width of 50- 1 00 n m. Currently amended
6. Canceled
7. The e l ectro-optical modulator of claim 1, wherein the first graphene layer has a selectively tuned F ermi level, and said gating voltage controls energy of the Fermi level of said first grapb ene layer to place s ai d first graphenelayer in the state of liglt absorption or the stat e of light transparency. Currently amended
Canceled
The electr o-opt ical modulator of claim 1, wherein the dielectric spacer is comprised of silicon dioxide (SiO 2), alu m inum oxide (A I 2 O), or hafnium oxide (HfO 2). Original
The electro-optical modulator of claim 1, wherein the first metal layer and the second layer are metal blocks fabricated by a single lithography and deposition step. Original
The electr o- optical modulator of clai m 1, wherein t h e substrate layer is comprised of Si, i e, InAs, InG aAs, or I nP. Original
A n electro-optical modulator comprising: a substrate; a first gr a phene layer positioned on the substrate and having a first contact; a first dielectric spa c er positioned on the first graphene layer; a second graphene layer positioned on the first dielectric spacer spaced fro m the first grap h ene layer with at least a portion of the first dielectric spacer positioned between the first and second graphene layers, said second graphene layer having a second contact; a first block and a second block positioned on the second graphene layer and having an optical waveguide sl o t therebet w een; and a voltage source providing a gating voltage applied across the first contact and the second contact to control the first and second g raphene layers to select between an absorptive state and a tran sparent tate to co n tro l an optical signal passi ng through the optical waveguide slot. Currently amended
The mod u lator of claim 13, f u rther co m prising: a second dielectric s pacer posit i oned on the second graphene layer; a third gr a phe n e layer positioned on the s econd dielectric spacer and coupled to the first gr aphene layer and extending over a top of the first and/or second block, with at least a portion of the second dielectric spa c er positioned between the second a nd third graphene layers; a third dielectric spacer positioned on the third graphene layer; and a fourth graphene layer positioned on the third dielectric s pacer and coupled to the second graphene layer and extending over the top of the first and/or s econd block, with at l east a po rt ion of the third dielectric spacer positioned between the third and fourth graphene layers. Currently amended
The modulator of claim 1, w herein light passing through the plas m onic slot is has a wavelength within the telecommunication b and. Previously presented
1 7. The modulator of claim 1 6, wherein the w a velength is 1310 nm or 1550 nm. Previously presented
The m odulator of claim 1, wherein the graphene structure comprises a lattice. Previously presented
The modulator of claim 1, wherein the graphene structure comprise a hexagonal lattice. Previously presented
(N ew) The e l ectr o -optical modulator of claim 1, wherein said graphene structure creates the electric fie ld that enha nc e the l igh t- mat ter-i nteractio n s by a surface plasmonic polarit o ns. New
Layer stacks claimed or described, ordered top of device to substrate.
single-layer graphene plasmonic slot electro-optical modulator
quad-layer graphene plasmonic slot electro-optical modulator
Materials described outside the worked examples.
graphene
C
dielectric spacer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
VCSEL WITH INTEGRATED ELECTRICALLY MODULATED INTRA-CAVITY GRAPHENE ABSORBER
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
Patent
Atlas literature
Patent
US 10,663,766Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 4C. This "OFF" configuration is optically lossy, while the "ON" configuration is substantially non-lossy. The first graphene layer 104a' and the second …
FIG. 5 A, the waveguide 502, comprised of a semiconductor like silicon, is covered by an oxide layer 504. A graphene layer 506 rests on top of the oxide layer …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
2. The electro-optical modulator of claim 1, wherein the modulator is comprised of a second graphene layer disposed above the first graphene layer, such that at least a portion of the dielectric spacer is sandwiched between the first graphene layer and the second graphene layer. Currently amended
(Currently A mended) The e l ectro-optical modulator of clai m 2, where the modulator is c omprised of a third graphene layer and a fou rt h graphene layer, wherein the first graphene layer, the second graphene layer, the third graphene layer, a nd the fourth gr a phene layer enclose the first m etal layer, the second metal layer, and the plasmonic slot, wherein the dielectric spacer comprises a first dielectric spacer, and further comprising a second dielectric spacer, at least a portion of said seco nd dielectric s p acer between the second graphene layer and the third graphene layer and a third dielectric spacer, at least a portion of said third dielectric spacer between the th ird graphene layer and the fourth graphene layer. Currently amended
The electro-optical modulator of claim 3, wherein the first contact and the second contact are each comprised of a top lay er of a conductive metal a nd a bottom adhesive layer comprised of chromium. Previously presented
The modulator of claim 3, wherein the first, second, third and fourth graphene layers each have a thickness of one atom. Previously presented
The electro-optical modulator of claim 1, wherein the plasmonic slot has a height of 50- 1 00 n m and a width of 50- 1 00 n m. Currently amended
6. Canceled
7. The e l ectro-optical modulator of claim 1, wherein the first graphene layer has a selectively tuned F ermi level, and said gating voltage controls energy of the Fermi level of said first grapb ene layer to place s ai d first graphenelayer in the state of liglt absorption or the stat e of light transparency. Currently amended
Canceled
The electr o-opt ical modulator of claim 1, wherein the dielectric spacer is comprised of silicon dioxide (SiO 2), alu m inum oxide (A I 2 O), or hafnium oxide (HfO 2). Original
The electro-optical modulator of claim 1, wherein the first metal layer and the second layer are metal blocks fabricated by a single lithography and deposition step. Original
The electr o- optical modulator of clai m 1, wherein t h e substrate layer is comprised of Si, i e, InAs, InG aAs, or I nP. Original
A n electro-optical modulator comprising: a substrate; a first gr a phene layer positioned on the substrate and having a first contact; a first dielectric spa c er positioned on the first graphene layer; a second graphene layer positioned on the first dielectric spacer spaced fro m the first grap h ene layer with at least a portion of the first dielectric spacer positioned between the first and second graphene layers, said second graphene layer having a second contact; a first block and a second block positioned on the second graphene layer and having an optical waveguide sl o t therebet w een; and a voltage source providing a gating voltage applied across the first contact and the second contact to control the first and second g raphene layers to select between an absorptive state and a tran sparent tate to co n tro l an optical signal passi ng through the optical waveguide slot. Currently amended
The mod u lator of claim 13, f u rther co m prising: a second dielectric s pacer posit i oned on the second graphene layer; a third gr a phe n e layer positioned on the s econd dielectric spacer and coupled to the first gr aphene layer and extending over a top of the first and/or second block, with at least a portion of the second dielectric spa c er positioned between the second a nd third graphene layers; a third dielectric spacer positioned on the third graphene layer; and a fourth graphene layer positioned on the third dielectric s pacer and coupled to the second graphene layer and extending over the top of the first and/or s econd block, with at l east a po rt ion of the third dielectric spacer positioned between the third and fourth graphene layers. Currently amended
The modulator of claim 1, w herein light passing through the plas m onic slot is has a wavelength within the telecommunication b and. Previously presented
1 7. The modulator of claim 1 6, wherein the w a velength is 1310 nm or 1550 nm. Previously presented
The m odulator of claim 1, wherein the graphene structure comprises a lattice. Previously presented
The modulator of claim 1, wherein the graphene structure comprise a hexagonal lattice. Previously presented
(N ew) The e l ectr o -optical modulator of claim 1, wherein said graphene structure creates the electric fie ld that enha nc e the l igh t- mat ter-i nteractio n s by a surface plasmonic polarit o ns. New
Layer stacks claimed or described, ordered top of device to substrate.
single-layer graphene plasmonic slot electro-optical modulator
quad-layer graphene plasmonic slot electro-optical modulator
Materials described outside the worked examples.
graphene
C
dielectric spacer
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 1 C shows an exemplary optical mode profile of the single layer graphene plasmonic slot structure, where it shows electrical field square (energy of …
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | ≤ 1 nm | — |
Related documents with shared materials, methods, properties, or citations.
VCSEL WITH INTEGRATED ELECTRICALLY MODULATED INTRA-CAVITY GRAPHENE ABSORBER
CIRCUIT INCLUDING A NEGATIVE DIFFERENTIAL RESISTANCE (NDR) DEVICE HAVING A GRAPHENE CHANNEL, AND METHOD OF OPERATING THE CIRUCIT
double-layer graphene plasmonic slot electro-optical modulator
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
plasmonic metal (silver, gold, aluminum, titanium nitride)
chromium
Cr
substrate material (Si, InAs, InGaAs, InP)
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
double-layer graphene plasmonic slot electro-optical modulator
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
plasmonic metal (silver, gold, aluminum, titanium nitride)
chromium
Cr
substrate material (Si, InAs, InGaAs, InP)
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
double-layer graphene plasmonic slot electro-optical modulator
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
plasmonic metal (silver, gold, aluminum, titanium nitride)
chromium
Cr
substrate material (Si, InAs, InGaAs, InP)
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
double-layer graphene plasmonic slot electro-optical modulator
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
hafnium oxide
HfO₂
plasmonic metal (silver, gold, aluminum, titanium nitride)
chromium
Cr
substrate material (Si, InAs, InGaAs, InP)
FIG. 2A shows the performance of presented single layer graphene plasmonic slot modulator in term of extinction ratio, according to an embodiment of the …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 3A embodiment may be favorable to the FIG. l A embodiment for a number of reasons. For example, by integrating more layers of graphene into the device is …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …
FIG. 6 shows the experimental result of source-drain IV curve of a graphene transistor, demonstrates that before and after e-beam lithography process, the …