Patent
US 9,449,816METHOD FOR PRODUCING GRAPHENE OXIDE WITH TUNABLE GAP
Morteza Gharib
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 9,449,816Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 provides a flow chart of an exemplary embodiment of a process for forming a graphene oxide mate ri al in accordance with the current invention
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 5 provides a flow chart of an exemplary embodiment of a process for using a masking technique in conjunction with the process for forming graphene oxide mate ri al in accordance with the current invention
FIG 6 provides an optical microscopy image of partially oxidized graphene layer after 10 seconds oxidation at RF power of 20 watt, the c overed region exhibits energy gap opening of-0 1 eV (top left), while the u ncovered region exhibits energy gap of-0 4 eV (bottom ri ght), a physical mask is used …
FIG 7 provides data plots illustrating (a) UV/ozone and oxygen plasma treatments are employed to create an energy gap opening in graphene layer, (b) Current-image of a p ri stine graphene layer obtained by scanning tunneling microscope (STM) showing a highly-symmet ri c hexagonal lattice structure, …
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
FIG 12 shows atomically resolved STM images of (a) UVO5m, (b) O₂P 1 0s, (c) UVO 1 20m, and (d) 0 2P60s for samples obtained at a scan rate of 20 3 Hz and a 6 C 9 02399 CON stabilization voltage and current of 100 mV and 650 pA respectively, where the insets show Fou ri er transformed unit cells
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; and oxidizing at least a portion of the sp2 structure graphene layer with a dry oxidation technique for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the graphene layer.
The method of claim 1, wherein, prior to the dry oxidation treatment, at least one portion of the sp2 structure graphene is masked to prevent oxidation in the at least one portion.
The method of claim 1, wherein the dry oxidation treatment is a plasma oxidation treatment.
The method of claim 1, wherein the dry oxidation treatment applied is a UV/Ozone oxidation treatment.
The method of claim 1, wherein the band gap is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 1, wherein the band gap range from 0.1 to 2.5 eV, and wherein the oxygen-to-carbon atomic ratio within the sp2-structure graphene is from about 9% to 21%.
The method of claim 1, wherein the providing is by depositing the sp2 graphene layer on a substrate, wherein the substrate is a material selected from the group consisting of silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide.
The method of claim 1, wherein the sp2 structure graphene is deposited by chemical vapor deposition.
The method of claim 1, wherein the sp2 structure graphene is deposited by micromechanical exfoliation.
The method of claim 1, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; and oxidizing at least a portion of the a sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the -3- Application No. 14/095,454 Docket No.: C5353.0085.C 1 sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the sp2 structure graphene layer.
The method of claim 14, wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp2 structure graphene portions, each of said portions having a desired band gap.
The method of claim 14, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 14, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; oxidizing at least a portion of the unmasked sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0%, such that the oxidation is confined to the sp2 structure the oxidation is confined to the graphene layer; and repeating and iterating the masking and oxidation to obtain a plurality of distinct sp2 structure graphene oxide layers, each having different band gaps. -4- Application No. 14/095,454 Docket No.: C5353.0085.C 1
The method of claim 19, wherein each of the portions have different band gaps.
The method of claim 19, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 19, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %. -5-
canceled
23-29. canceled
Materials described outside the worked examples.
sp2 structure graphene
sp2 structure graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.1–2.5 | sp2 structure graphene oxide |
— | 0.1–2.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,449,816Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 provides a flow chart of an exemplary embodiment of a process for forming a graphene oxide mate ri al in accordance with the current invention
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 5 provides a flow chart of an exemplary embodiment of a process for using a masking technique in conjunction with the process for forming graphene oxide mate ri al in accordance with the current invention
FIG 6 provides an optical microscopy image of partially oxidized graphene layer after 10 seconds oxidation at RF power of 20 watt, the c overed region exhibits energy gap opening of-0 1 eV (top left), while the u ncovered region exhibits energy gap of-0 4 eV (bottom ri ght), a physical mask is used …
FIG 7 provides data plots illustrating (a) UV/ozone and oxygen plasma treatments are employed to create an energy gap opening in graphene layer, (b) Current-image of a p ri stine graphene layer obtained by scanning tunneling microscope (STM) showing a highly-symmet ri c hexagonal lattice structure, …
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
FIG 12 shows atomically resolved STM images of (a) UVO5m, (b) O₂P 1 0s, (c) UVO 1 20m, and (d) 0 2P60s for samples obtained at a scan rate of 20 3 Hz and a 6 C 9 02399 CON stabilization voltage and current of 100 mV and 650 pA respectively, where the insets show Fou ri er transformed unit cells
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; and oxidizing at least a portion of the sp2 structure graphene layer with a dry oxidation technique for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the graphene layer.
The method of claim 1, wherein, prior to the dry oxidation treatment, at least one portion of the sp2 structure graphene is masked to prevent oxidation in the at least one portion.
The method of claim 1, wherein the dry oxidation treatment is a plasma oxidation treatment.
The method of claim 1, wherein the dry oxidation treatment applied is a UV/Ozone oxidation treatment.
The method of claim 1, wherein the band gap is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 1, wherein the band gap range from 0.1 to 2.5 eV, and wherein the oxygen-to-carbon atomic ratio within the sp2-structure graphene is from about 9% to 21%.
The method of claim 1, wherein the providing is by depositing the sp2 graphene layer on a substrate, wherein the substrate is a material selected from the group consisting of silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide.
The method of claim 1, wherein the sp2 structure graphene is deposited by chemical vapor deposition.
The method of claim 1, wherein the sp2 structure graphene is deposited by micromechanical exfoliation.
The method of claim 1, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; and oxidizing at least a portion of the a sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the -3- Application No. 14/095,454 Docket No.: C5353.0085.C 1 sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the sp2 structure graphene layer.
The method of claim 14, wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp2 structure graphene portions, each of said portions having a desired band gap.
The method of claim 14, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 14, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; oxidizing at least a portion of the unmasked sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0%, such that the oxidation is confined to the sp2 structure the oxidation is confined to the graphene layer; and repeating and iterating the masking and oxidation to obtain a plurality of distinct sp2 structure graphene oxide layers, each having different band gaps. -4- Application No. 14/095,454 Docket No.: C5353.0085.C 1
The method of claim 19, wherein each of the portions have different band gaps.
The method of claim 19, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 19, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %. -5-
canceled
23-29. canceled
Materials described outside the worked examples.
sp2 structure graphene
sp2 structure graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.1–2.5 | sp2 structure graphene oxide |
— | 0.1–2.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,449,816Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 provides a flow chart of an exemplary embodiment of a process for forming a graphene oxide mate ri al in accordance with the current invention
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 5 provides a flow chart of an exemplary embodiment of a process for using a masking technique in conjunction with the process for forming graphene oxide mate ri al in accordance with the current invention
FIG 6 provides an optical microscopy image of partially oxidized graphene layer after 10 seconds oxidation at RF power of 20 watt, the c overed region exhibits energy gap opening of-0 1 eV (top left), while the u ncovered region exhibits energy gap of-0 4 eV (bottom ri ght), a physical mask is used …
FIG 7 provides data plots illustrating (a) UV/ozone and oxygen plasma treatments are employed to create an energy gap opening in graphene layer, (b) Current-image of a p ri stine graphene layer obtained by scanning tunneling microscope (STM) showing a highly-symmet ri c hexagonal lattice structure, …
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
FIG 12 shows atomically resolved STM images of (a) UVO5m, (b) O₂P 1 0s, (c) UVO 1 20m, and (d) 0 2P60s for samples obtained at a scan rate of 20 3 Hz and a 6 C 9 02399 CON stabilization voltage and current of 100 mV and 650 pA respectively, where the insets show Fou ri er transformed unit cells
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; and oxidizing at least a portion of the sp2 structure graphene layer with a dry oxidation technique for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the graphene layer.
The method of claim 1, wherein, prior to the dry oxidation treatment, at least one portion of the sp2 structure graphene is masked to prevent oxidation in the at least one portion.
The method of claim 1, wherein the dry oxidation treatment is a plasma oxidation treatment.
The method of claim 1, wherein the dry oxidation treatment applied is a UV/Ozone oxidation treatment.
The method of claim 1, wherein the band gap is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 1, wherein the band gap range from 0.1 to 2.5 eV, and wherein the oxygen-to-carbon atomic ratio within the sp2-structure graphene is from about 9% to 21%.
The method of claim 1, wherein the providing is by depositing the sp2 graphene layer on a substrate, wherein the substrate is a material selected from the group consisting of silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide.
The method of claim 1, wherein the sp2 structure graphene is deposited by chemical vapor deposition.
The method of claim 1, wherein the sp2 structure graphene is deposited by micromechanical exfoliation.
The method of claim 1, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; and oxidizing at least a portion of the a sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the -3- Application No. 14/095,454 Docket No.: C5353.0085.C 1 sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the sp2 structure graphene layer.
The method of claim 14, wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp2 structure graphene portions, each of said portions having a desired band gap.
The method of claim 14, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 14, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; oxidizing at least a portion of the unmasked sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0%, such that the oxidation is confined to the sp2 structure the oxidation is confined to the graphene layer; and repeating and iterating the masking and oxidation to obtain a plurality of distinct sp2 structure graphene oxide layers, each having different band gaps. -4- Application No. 14/095,454 Docket No.: C5353.0085.C 1
The method of claim 19, wherein each of the portions have different band gaps.
The method of claim 19, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 19, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %. -5-
canceled
23-29. canceled
Materials described outside the worked examples.
sp2 structure graphene
sp2 structure graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.1–2.5 | sp2 structure graphene oxide |
— | 0.1–2.5 eV |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,449,816Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG 1 provides a flow chart of an exemplary embodiment of a process for forming a graphene oxide mate ri al in accordance with the current invention
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 5 provides a flow chart of an exemplary embodiment of a process for using a masking technique in conjunction with the process for forming graphene oxide mate ri al in accordance with the current invention
FIG 6 provides an optical microscopy image of partially oxidized graphene layer after 10 seconds oxidation at RF power of 20 watt, the c overed region exhibits energy gap opening of-0 1 eV (top left), while the u ncovered region exhibits energy gap of-0 4 eV (bottom ri ght), a physical mask is used …
FIG 7 provides data plots illustrating (a) UV/ozone and oxygen plasma treatments are employed to create an energy gap opening in graphene layer, (b) Current-image of a p ri stine graphene layer obtained by scanning tunneling microscope (STM) showing a highly-symmet ri c hexagonal lattice structure, …
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
FIG 12 shows atomically resolved STM images of (a) UVO5m, (b) O₂P 1 0s, (c) UVO 1 20m, and (d) 0 2P60s for samples obtained at a scan rate of 20 3 Hz and a 6 C 9 02399 CON stabilization voltage and current of 100 mV and 650 pA respectively, where the insets show Fou ri er transformed unit cells
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; and oxidizing at least a portion of the sp2 structure graphene layer with a dry oxidation technique for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the graphene layer.
The method of claim 1, wherein, prior to the dry oxidation treatment, at least one portion of the sp2 structure graphene is masked to prevent oxidation in the at least one portion.
The method of claim 1, wherein the dry oxidation treatment is a plasma oxidation treatment.
The method of claim 1, wherein the dry oxidation treatment applied is a UV/Ozone oxidation treatment.
The method of claim 1, wherein the band gap is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 1, wherein the band gap range from 0.1 to 2.5 eV, and wherein the oxygen-to-carbon atomic ratio within the sp2-structure graphene is from about 9% to 21%.
The method of claim 1, wherein the providing is by depositing the sp2 graphene layer on a substrate, wherein the substrate is a material selected from the group consisting of silicon, silicon dioxide, aluminum oxide, sapphire, germanium, gallium arsenide, an alloy of silicon and germanium, and indium phosphide.
The method of claim 1, wherein the sp2 structure graphene is deposited by chemical vapor deposition.
The method of claim 1, wherein the sp2 structure graphene is deposited by micromechanical exfoliation.
The method of claim 1, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; and oxidizing at least a portion of the a sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the -3- Application No. 14/095,454 Docket No.: C5353.0085.C 1 sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0% such that the oxidation is confined to the sp2 structure graphene layer.
The method of claim 14, wherein the masking and oxidation steps are iterated to achieve a plurality of oxidized sp2 structure graphene portions, each of said portions having a desired band gap.
The method of claim 14, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 14, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %.
canceled
A method of fabricating an sp2 structure graphene oxide material comprising: depositing providing an sp2 structure graphene layer onto a substrate; masking at least one portion of the sp2 structure graphene material; oxidizing at least a portion of the unmasked sp2 structure graphene layer with a dry oxidation treatment for a period of time sufficient to obtain a band gap by introducing defects into the sp2 structure graphene layer, wherein an oxygen-to-carbon atomic ratio of the oxidized sp2 structure graphene layer is no greater than 21 0%, such that the oxidation is confined to the sp2 structure the oxidation is confined to the graphene layer; and repeating and iterating the masking and oxidation to obtain a plurality of distinct sp2 structure graphene oxide layers, each having different band gaps. -4- Application No. 14/095,454 Docket No.: C5353.0085.C 1
The method of claim 19, wherein each of the portions have different band gaps.
The method of claim 19, wherein the band gap of each of said portions is proportional to the concentration of oxidation within the sp2 structure graphene layer.
The method of claim 19, wherein the oxygen-to-carbon atomic ratio within the sp2 structure graphene is at least about 9 %. -5-
canceled
23-29. canceled
Materials described outside the worked examples.
sp2 structure graphene
sp2 structure graphene oxide
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG 2 provides a data plot showing exemplary expe ri mental results demonstrating how the band gap in a graphene oxide grows over time after exposure to oxidation
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Optical Band Gap | 0.1–2.5 | sp2 structure graphene oxide |
— | 0.1–2.5 eV |
Related documents with shared materials, methods, properties, or citations.
substrate
silicon
Si
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
sapphire
germanium
Ge
gallium arsenide
GaAs
silicon-germanium alloy
SiGe
indium phosphide
InP
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
| — |
substrate
silicon
Si
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
sapphire
germanium
Ge
gallium arsenide
GaAs
silicon-germanium alloy
SiGe
indium phosphide
InP
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
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substrate
silicon
Si
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
sapphire
germanium
Ge
gallium arsenide
GaAs
silicon-germanium alloy
SiGe
indium phosphide
InP
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
| — |
substrate
silicon
Si
silicon dioxide
SiO₂
aluminum oxide
Al₂O₃
sapphire
germanium
Ge
gallium arsenide
GaAs
silicon-germanium alloy
SiGe
indium phosphide
InP
FIG 3 provides data plots showing exemplary expe ri mental results demonstrating the band gap in a graphene oxide after exposure to (1) a UV/Ozone oxidation treatment, and (2) a plasma oxidation treatment
FIG 4 provides a data plot showing exemplary expe ri mental results correlating the size of the band gap with the oxygen concentration
FIG 8 provides data plots illustrating (a) typical averaged differential conductance curves d l/dV of oxygen plasma and UV/ozone treated graphene as probed using STS at more than five random locations of the sample with stabilization voltage and current of 100 mV and 650 pA respectively, (b) Energy …
FIG 9 provides data plots illustrating (a) typical high resolution C 1 s XPS spectra of (a) p ri stine, (b) UVO5m, (c) OP 10 s, (d) UVO120m, (e) OP60s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the presence of C-O, C=O, and …
FIG 10 provides data plots illustrating typical high resolution O 1 s XPS spectra of (a) p ri stine, (b) OP 10 s, (c) UVO 1 20m, (d) O 2P60s, (e) UVO240m, and (f) OP₁ 50s samples, where deconvolution of these spectra using Gaussian-Lorentzian lineshape and Shirley baseline correction show the …
FIG 11 provides data plots illustrating typical high resolution Ni 2p XPS spectra of (a) p ri stine, (b) UVO 1 20m, (c) 0 2P60s, and (d) OP 1 50s samples, where deconvolution of these spectra using a combination of Lorentzian asymmet ri c and Gaussian-Lorentzian lineshape, as well as Shirley …
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