Patent
US 9,590,138GAN BASED LED EPITAXIAL STRUCTURE AND METHOD FOR MANUFACTURING THE SAME
Yongge CAO
US
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Patent
Atlas literature
Patent
US 9,590,138Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN based LED epitaxial structure comprising: a substrate; and a GaN based LED epitaxial structure on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material, and the substrate containing photoluminescence fluorescent material is a polycrystalline Re₃A l5O₁ 2 ceramic substrate or a textured Re₃A l5O₁ 2 ceramic substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a rare earth element doped Yttrium Aluminum Garnet series Re₃A l5O₁₂ substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a substrate with a surface roughness lower than lO nm which is obtained by a fine polishing.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises in turn a low temperature A l N buffer layer, a low temperature GaN buffer layer, a GaN buffer layer, an n-type GaN layer, an A l GaN barrier layer, an InGaN/GaN multi quantum well lighting layer, an A l GaN barrier layer, a P type GaN layer and a heavily doped P type GaN electrode contact layer.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises a GaN based LED epitaxial structure which is laterally epitaxial grown on a pattered rare earth element doped Re₃A l5O₁ 2 ceramic substrate, a single crystalline substrate or a bonded substrate.
A method for manufacturing the GaN based LED epitaxial structure of claim 1, comprising the steps of: preparing a substrate containing a photoluminescence fluorescent material that is a polycrystalline Re₃A 15O₁ 2 ceramic substrate or a textured Re₃A 15O₁ 2 ceramic substrate; and epitaxially growing a GaN based LED epitaxial structure on the substrate.
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-23. Please add new claims 24-33 as follows: canceled
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Layer stacks claimed or described, ordered top of device to substrate.
GaN based LED epitaxial structure on fluorescent ceramic substrate
Materials described outside the worked examples.
photoluminescence fluorescent material substrate (polycrystalline or textured Re₃Al₅O₁₂ ceramic)
Re₃Al₅O₁₂
Al₂O₃ substrate
Al₂O₃
AlN buffer layer (low temperature)
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–7200 s | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,590,138Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN based LED epitaxial structure comprising: a substrate; and a GaN based LED epitaxial structure on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material, and the substrate containing photoluminescence fluorescent material is a polycrystalline Re₃A l5O₁ 2 ceramic substrate or a textured Re₃A l5O₁ 2 ceramic substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a rare earth element doped Yttrium Aluminum Garnet series Re₃A l5O₁₂ substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a substrate with a surface roughness lower than lO nm which is obtained by a fine polishing.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises in turn a low temperature A l N buffer layer, a low temperature GaN buffer layer, a GaN buffer layer, an n-type GaN layer, an A l GaN barrier layer, an InGaN/GaN multi quantum well lighting layer, an A l GaN barrier layer, a P type GaN layer and a heavily doped P type GaN electrode contact layer.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises a GaN based LED epitaxial structure which is laterally epitaxial grown on a pattered rare earth element doped Re₃A l5O₁ 2 ceramic substrate, a single crystalline substrate or a bonded substrate.
A method for manufacturing the GaN based LED epitaxial structure of claim 1, comprising the steps of: preparing a substrate containing a photoluminescence fluorescent material that is a polycrystalline Re₃A 15O₁ 2 ceramic substrate or a textured Re₃A 15O₁ 2 ceramic substrate; and epitaxially growing a GaN based LED epitaxial structure on the substrate.
canceled
canceled
-23. Please add new claims 24-33 as follows: canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based LED epitaxial structure on fluorescent ceramic substrate
Materials described outside the worked examples.
photoluminescence fluorescent material substrate (polycrystalline or textured Re₃Al₅O₁₂ ceramic)
Re₃Al₅O₁₂
Al₂O₃ substrate
Al₂O₃
AlN buffer layer (low temperature)
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–7200 s | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,590,138Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN based LED epitaxial structure comprising: a substrate; and a GaN based LED epitaxial structure on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material, and the substrate containing photoluminescence fluorescent material is a polycrystalline Re₃A l5O₁ 2 ceramic substrate or a textured Re₃A l5O₁ 2 ceramic substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a rare earth element doped Yttrium Aluminum Garnet series Re₃A l5O₁₂ substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a substrate with a surface roughness lower than lO nm which is obtained by a fine polishing.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises in turn a low temperature A l N buffer layer, a low temperature GaN buffer layer, a GaN buffer layer, an n-type GaN layer, an A l GaN barrier layer, an InGaN/GaN multi quantum well lighting layer, an A l GaN barrier layer, a P type GaN layer and a heavily doped P type GaN electrode contact layer.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises a GaN based LED epitaxial structure which is laterally epitaxial grown on a pattered rare earth element doped Re₃A l5O₁ 2 ceramic substrate, a single crystalline substrate or a bonded substrate.
A method for manufacturing the GaN based LED epitaxial structure of claim 1, comprising the steps of: preparing a substrate containing a photoluminescence fluorescent material that is a polycrystalline Re₃A 15O₁ 2 ceramic substrate or a textured Re₃A 15O₁ 2 ceramic substrate; and epitaxially growing a GaN based LED epitaxial structure on the substrate.
canceled
canceled
-23. Please add new claims 24-33 as follows: canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based LED epitaxial structure on fluorescent ceramic substrate
Materials described outside the worked examples.
photoluminescence fluorescent material substrate (polycrystalline or textured Re₃Al₅O₁₂ ceramic)
Re₃Al₅O₁₂
Al₂O₃ substrate
Al₂O₃
AlN buffer layer (low temperature)
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–7200 s | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 9,590,138Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A GaN based LED epitaxial structure comprising: a substrate; and a GaN based LED epitaxial structure on the substrate, wherein the substrate is a substrate containing a photoluminescence fluorescent material, and the substrate containing photoluminescence fluorescent material is a polycrystalline Re₃A l5O₁ 2 ceramic substrate or a textured Re₃A l5O₁ 2 ceramic substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a rare earth element doped Yttrium Aluminum Garnet series Re₃A l5O₁₂ substrate.
The GaN based LED epitaxial structure according to claim 1, wherein the substrate comprises a substrate with a surface roughness lower than lO nm which is obtained by a fine polishing.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises in turn a low temperature A l N buffer layer, a low temperature GaN buffer layer, a GaN buffer layer, an n-type GaN layer, an A l GaN barrier layer, an InGaN/GaN multi quantum well lighting layer, an A l GaN barrier layer, a P type GaN layer and a heavily doped P type GaN electrode contact layer.
The GaN based LED epitaxial structure according to claim 1, wherein the GaN based LED epitaxial structure comprises a GaN based LED epitaxial structure which is laterally epitaxial grown on a pattered rare earth element doped Re₃A l5O₁ 2 ceramic substrate, a single crystalline substrate or a bonded substrate.
A method for manufacturing the GaN based LED epitaxial structure of claim 1, comprising the steps of: preparing a substrate containing a photoluminescence fluorescent material that is a polycrystalline Re₃A 15O₁ 2 ceramic substrate or a textured Re₃A 15O₁ 2 ceramic substrate; and epitaxially growing a GaN based LED epitaxial structure on the substrate.
canceled
canceled
-23. Please add new claims 24-33 as follows: canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
canceled
Layer stacks claimed or described, ordered top of device to substrate.
GaN based LED epitaxial structure on fluorescent ceramic substrate
Materials described outside the worked examples.
photoluminescence fluorescent material substrate (polycrystalline or textured Re₃Al₅O₁₂ ceramic)
Re₃Al₅O₁₂
Al₂O₃ substrate
Al₂O₃
AlN buffer layer (low temperature)
AlN
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Duration | 20–7200 s | — |
Duration |
Related documents with shared materials, methods, properties, or citations.
GaN buffer layer
GaN
AlGaN barrier layer
AlGaN
InGaN/GaN multi quantum well lighting layer
InGaN/GaN
| 1800–36000 s |
| — |
Pressure | 0.001 Pa | — |
Temperature | 1000–1200 °C | — |
Duration | 5–10 minutes | — |
Thickness | 15–60 nm | — |
Thickness | 50–500 nm | — |
Thickness | 0.1–0.3 nm | — |
Duration | 5–20 minutes | — |
Thickness | 0–200 nm | — |
Thickness | 50–800 nm | — |
Thickness | 100–800 nm | — |
Thickness | ≤ 10 nm | — |
GaN buffer layer
GaN
AlGaN barrier layer
AlGaN
InGaN/GaN multi quantum well lighting layer
InGaN/GaN
| 1800–36000 s |
| — |
Pressure | 0.001 Pa | — |
Temperature | 1000–1200 °C | — |
Duration | 5–10 minutes | — |
Thickness | 15–60 nm | — |
Thickness | 50–500 nm | — |
Thickness | 0.1–0.3 nm | — |
Duration | 5–20 minutes | — |
Thickness | 0–200 nm | — |
Thickness | 50–800 nm | — |
Thickness | 100–800 nm | — |
Thickness | ≤ 10 nm | — |
GaN buffer layer
GaN
AlGaN barrier layer
AlGaN
InGaN/GaN multi quantum well lighting layer
InGaN/GaN
| 1800–36000 s |
| — |
Pressure | 0.001 Pa | — |
Temperature | 1000–1200 °C | — |
Duration | 5–10 minutes | — |
Thickness | 15–60 nm | — |
Thickness | 50–500 nm | — |
Thickness | 0.1–0.3 nm | — |
Duration | 5–20 minutes | — |
Thickness | 0–200 nm | — |
Thickness | 50–800 nm | — |
Thickness | 100–800 nm | — |
Thickness | ≤ 10 nm | — |
GaN buffer layer
GaN
AlGaN barrier layer
AlGaN
InGaN/GaN multi quantum well lighting layer
InGaN/GaN
| 1800–36000 s |
| — |
Pressure | 0.001 Pa | — |
Temperature | 1000–1200 °C | — |
Duration | 5–10 minutes | — |
Thickness | 15–60 nm | — |
Thickness | 50–500 nm | — |
Thickness | 0.1–0.3 nm | — |
Duration | 5–20 minutes | — |
Thickness | 0–200 nm | — |
Thickness | 50–800 nm | — |
Thickness | 100–800 nm | — |
Thickness | ≤ 10 nm | — |