Patent
US 8,487,409PROCESS FOR PRODUCING INDIUM-PHOSPHORUS SUBSTRATE, PROCESS FOR PRODUCING EPITAXIAL WAFER, INDIUM-PHOSPHORUS SUBSTRATE, AND EPITAXIAL WAFER
Kyoko Okita
US
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US 8,487,409Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: Claim 1 Claim 2 Claim 3 Claim 4 Claim 5: An indium phosphide substrate manufactured according to [[the]] an indium phosphide substrate manufacturing method set for th in claim 1, com p risin g: a step of prep arin q an indium p hos p hide substrate: a step of washin q the indium p hos p hide substrate with sulfuric acid/hydro qen peroxide: and a step, followin q said step of wash inq with sulfuric acid/hydro q en peroxide, of washin q the indium p hos p hide substrate with p hos p horic acid: ei-a-4nP the indium p hos p hide substrate having a front side, and characterized in that: along said front side, concentration of sulfuric-acid ions is not greater than 0.6 ng/cm2, and concentration of carbon and concentration of oxygen that has formed bonds with atoms other than sulfur is 40 atomic percent or less.
-2- App. No. 13/125,048 Amendment dated Reply to Office action of Claim 7: The indium phosphide substrate set forth in claim 5, incorporating a dopant consisting of at least one substance selected from the group composed of iron, sulfur, tin, and zinc.
An epitaxial wafer comprising: the indium phosphide substrate set forth in claim 5; and an epitaxial layer formed onto the front side of said indium phosphide substrate.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
epitaxial wafer
Materials described outside the worked examples.
indium phosphide substrate
InP
sulfuric acid/hydrogen peroxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sulfuric-acid ion concentration not greater than 0.6 ng/cm2 | ≤ 0.6 ng/cm2 | InP |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,487,409Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: Claim 1 Claim 2 Claim 3 Claim 4 Claim 5: An indium phosphide substrate manufactured according to [[the]] an indium phosphide substrate manufacturing method set for th in claim 1, com p risin g: a step of prep arin q an indium p hos p hide substrate: a step of washin q the indium p hos p hide substrate with sulfuric acid/hydro qen peroxide: and a step, followin q said step of wash inq with sulfuric acid/hydro q en peroxide, of washin q the indium p hos p hide substrate with p hos p horic acid: ei-a-4nP the indium p hos p hide substrate having a front side, and characterized in that: along said front side, concentration of sulfuric-acid ions is not greater than 0.6 ng/cm2, and concentration of carbon and concentration of oxygen that has formed bonds with atoms other than sulfur is 40 atomic percent or less.
-2- App. No. 13/125,048 Amendment dated Reply to Office action of Claim 7: The indium phosphide substrate set forth in claim 5, incorporating a dopant consisting of at least one substance selected from the group composed of iron, sulfur, tin, and zinc.
An epitaxial wafer comprising: the indium phosphide substrate set forth in claim 5; and an epitaxial layer formed onto the front side of said indium phosphide substrate.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
epitaxial wafer
Materials described outside the worked examples.
indium phosphide substrate
InP
sulfuric acid/hydrogen peroxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sulfuric-acid ion concentration not greater than 0.6 ng/cm2 | ≤ 0.6 ng/cm2 | InP |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,487,409Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: Claim 1 Claim 2 Claim 3 Claim 4 Claim 5: An indium phosphide substrate manufactured according to [[the]] an indium phosphide substrate manufacturing method set for th in claim 1, com p risin g: a step of prep arin q an indium p hos p hide substrate: a step of washin q the indium p hos p hide substrate with sulfuric acid/hydro qen peroxide: and a step, followin q said step of wash inq with sulfuric acid/hydro q en peroxide, of washin q the indium p hos p hide substrate with p hos p horic acid: ei-a-4nP the indium p hos p hide substrate having a front side, and characterized in that: along said front side, concentration of sulfuric-acid ions is not greater than 0.6 ng/cm2, and concentration of carbon and concentration of oxygen that has formed bonds with atoms other than sulfur is 40 atomic percent or less.
-2- App. No. 13/125,048 Amendment dated Reply to Office action of Claim 7: The indium phosphide substrate set forth in claim 5, incorporating a dopant consisting of at least one substance selected from the group composed of iron, sulfur, tin, and zinc.
An epitaxial wafer comprising: the indium phosphide substrate set forth in claim 5; and an epitaxial layer formed onto the front side of said indium phosphide substrate.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
epitaxial wafer
Materials described outside the worked examples.
indium phosphide substrate
InP
sulfuric acid/hydrogen peroxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sulfuric-acid ion concentration not greater than 0.6 ng/cm2 | ≤ 0.6 ng/cm2 | InP |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 8,487,409Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Listing of Claims: Claim 1 Claim 2 Claim 3 Claim 4 Claim 5: An indium phosphide substrate manufactured according to [[the]] an indium phosphide substrate manufacturing method set for th in claim 1, com p risin g: a step of prep arin q an indium p hos p hide substrate: a step of washin q the indium p hos p hide substrate with sulfuric acid/hydro qen peroxide: and a step, followin q said step of wash inq with sulfuric acid/hydro q en peroxide, of washin q the indium p hos p hide substrate with p hos p horic acid: ei-a-4nP the indium p hos p hide substrate having a front side, and characterized in that: along said front side, concentration of sulfuric-acid ions is not greater than 0.6 ng/cm2, and concentration of carbon and concentration of oxygen that has formed bonds with atoms other than sulfur is 40 atomic percent or less.
-2- App. No. 13/125,048 Amendment dated Reply to Office action of Claim 7: The indium phosphide substrate set forth in claim 5, incorporating a dopant consisting of at least one substance selected from the group composed of iron, sulfur, tin, and zinc.
An epitaxial wafer comprising: the indium phosphide substrate set forth in claim 5; and an epitaxial layer formed onto the front side of said indium phosphide substrate.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
epitaxial wafer
Materials described outside the worked examples.
indium phosphide substrate
InP
sulfuric acid/hydrogen peroxide
Additional fabrication and treatment steps described in the patent.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
sulfuric-acid ion concentration not greater than 0.6 ng/cm2 | ≤ 0.6 ng/cm2 | InP |
Related documents with shared materials, methods, properties, or citations.
phosphoric acid
H₃PO₄
dopant (iron, sulfur, tin, zinc)
epitaxial layer
| ≤ 40 atomic percent |
InP |
In/P concentration ratio 1.23 or less | ≤ 1.23 | InP |
In oxides 1.2 atomic percent or less | ≤ 1.2 atomic percent | InP |
Thickness | 1250–1500 nm | — |
INDIUM PHOSPHIDE SUBSTRATE
phosphoric acid
H₃PO₄
dopant (iron, sulfur, tin, zinc)
epitaxial layer
| ≤ 40 atomic percent |
InP |
In/P concentration ratio 1.23 or less | ≤ 1.23 | InP |
In oxides 1.2 atomic percent or less | ≤ 1.2 atomic percent | InP |
Thickness | 1250–1500 nm | — |
INDIUM PHOSPHIDE SUBSTRATE
phosphoric acid
H₃PO₄
dopant (iron, sulfur, tin, zinc)
epitaxial layer
| ≤ 40 atomic percent |
InP |
In/P concentration ratio 1.23 or less | ≤ 1.23 | InP |
In oxides 1.2 atomic percent or less | ≤ 1.2 atomic percent | InP |
Thickness | 1250–1500 nm | — |
INDIUM PHOSPHIDE SUBSTRATE
phosphoric acid
H₃PO₄
dopant (iron, sulfur, tin, zinc)
epitaxial layer
| ≤ 40 atomic percent |
InP |
In/P concentration ratio 1.23 or less | ≤ 1.23 | InP |
In oxides 1.2 atomic percent or less | ≤ 1.2 atomic percent | InP |
Thickness | 1250–1500 nm | — |
INDIUM PHOSPHIDE SUBSTRATE