Patent
US 11,456,363OF INVENTION
Muneyuki Nishioka
US
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Patent
Atlas literature
Patent
US 11,456,363Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c m- 3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 10 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10-5 in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the first flat region and the first notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Currently amended
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 500 c m 2. New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 60 cm 2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 cm⁻³ and not higher than 4.0 x 10 18 c m3, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 c m- 2 and not higher than 5000 c mt2 New
The indium phosphide crystal substrate according to claim 2, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 c m- 3 and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cu- 2 and not higher than 5000 c m2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m 2 and not higher than 5000 cm 2. New
Claims 3 and 4. Canceled
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 jm, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c mt3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10- 5 in any of a second flat region extending over a width from the flat portion to a position at a distance of 1 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a second notch region extending over a width from the notch portion to a position at a distance of 1 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the second flat region and the second notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Previously presented
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 m m and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 60 c m 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 c m- 3 and not higher than 4.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 cm⁻² and not higher than 5000 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m- 2 and not higher than 5000 c n- 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm- 2 and not higher than 5000 cm⁻². New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide crystal substrate
Materials described outside the worked examples.
indium phosphide
InP
sulfur dopant
S
tin dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (S-doped, first flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, first flat/notch region) | 500–5000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
Table 3 summarizes a crac k defect ratio in manufacturing of the su
p. 29
Table 4
Table 3 summarizes a crac k defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,456,363Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c m- 3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 10 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10-5 in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the first flat region and the first notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Currently amended
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 500 c m 2. New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 60 cm 2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 cm⁻³ and not higher than 4.0 x 10 18 c m3, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 c m- 2 and not higher than 5000 c mt2 New
The indium phosphide crystal substrate according to claim 2, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 c m- 3 and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cu- 2 and not higher than 5000 c m2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m 2 and not higher than 5000 cm 2. New
Claims 3 and 4. Canceled
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 jm, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c mt3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10- 5 in any of a second flat region extending over a width from the flat portion to a position at a distance of 1 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a second notch region extending over a width from the notch portion to a position at a distance of 1 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the second flat region and the second notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Previously presented
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 m m and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 60 c m 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 c m- 3 and not higher than 4.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 cm⁻² and not higher than 5000 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m- 2 and not higher than 5000 c n- 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm- 2 and not higher than 5000 cm⁻². New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide crystal substrate
Materials described outside the worked examples.
indium phosphide
InP
sulfur dopant
S
tin dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (S-doped, first flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, first flat/notch region) | 500–5000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
Table 3 summarizes a crac k defect ratio in manufacturing of the su
p. 29
Table 4
Table 3 summarizes a crac k defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,456,363Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c m- 3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 10 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10-5 in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the first flat region and the first notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Currently amended
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 500 c m 2. New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 60 cm 2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 cm⁻³ and not higher than 4.0 x 10 18 c m3, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 c m- 2 and not higher than 5000 c mt2 New
The indium phosphide crystal substrate according to claim 2, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 c m- 3 and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cu- 2 and not higher than 5000 c m2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m 2 and not higher than 5000 cm 2. New
Claims 3 and 4. Canceled
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 jm, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c mt3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10- 5 in any of a second flat region extending over a width from the flat portion to a position at a distance of 1 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a second notch region extending over a width from the notch portion to a position at a distance of 1 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the second flat region and the second notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Previously presented
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 m m and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 60 c m 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 c m- 3 and not higher than 4.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 cm⁻² and not higher than 5000 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m- 2 and not higher than 5000 c n- 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm- 2 and not higher than 5000 cm⁻². New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide crystal substrate
Materials described outside the worked examples.
indium phosphide
InP
sulfur dopant
S
tin dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (S-doped, first flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, first flat/notch region) | 500–5000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
Table 3 summarizes a crac k defect ratio in manufacturing of the su
p. 29
Table 4
Table 3 summarizes a crac k defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,456,363Patent drawings and their descriptions. Click a drawing to enlarge it.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 m, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c m- 3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 10 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10-5 in any of a first flat region extending over a width from the flat portion to a position at a distance of 2 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a first notch region extending over a width from the notch portion to a position at a distance of 2 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the first flat region and the first notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Currently amended
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 500 c m 2. New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 c m- 3 and not higher than 8.0 x 1018 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 60 cm 2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 cm⁻³ and not higher than 4.0 x 10 18 c m3, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 c m- 2 and not higher than 5000 c mt2 New
The indium phosphide crystal substrate according to claim 2, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 c m- 3 and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cu- 2 and not higher than 5000 c m2 New
The indium phosphide crystal substrate according to claim 2, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m 2 and not higher than 5000 cm 2. New
Claims 3 and 4. Canceled
Canceled
An indium phosphide crystal substrate including a main surface having a diameter not smaller than 100 mm and not greater than 205 mm and a thickness not smaller than 300 m and not greater than 800 jm, a part of an outer edge of the indium phosphide crystal substrate including any of a flat portion and a notch portion, the indium phosphide crystal substrate containing any of sulfur atoms at a concentration not lower than 2.0 x 10 18 cm- 3 and not higher than 8.0 x 10 18 c mt3, tin atoms at a concentration not lower than 1.0 x 10 18 cm- 3 and not higher than 4.0 x 18 cm⁻³, and iron atoms at a concentration not lower than 5.0 x 10 15 cm- 3 and not higher than 1.0 x 10 17 cm⁻³, and the indium phosphide crystal substrate having average residual strain not less than 5 x 10- 6 and not more than 5 x 10- 5 in any of a second flat region extending over a width from the flat portion to a position at a distance of 1 mm in a direction perpendicular to a straight line indicating the flat portion in the main surface and a second notch region extending over a width from the notch portion to a position at a distance of 1 mm in a direction perpendicular to a curve indicating the notch portion in the main surface, wherein in any of the second flat region and the second notch region, when the indium phosphide crystal substrate contains the sulfur atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm⁻², and when the indium phosphide crystal substrate contains any of the tin atoms and the iron atoms, the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm⁻² and not higher than 5000 cm -2 Previously presented
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 m m and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 5.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 cm⁻² and not higher than 500 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains sulfur atoms at a concentration not lower than 2.0 x 10 18 cm⁻³ and not higher than 8.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 10 c m- 2 and not higher than 60 c m 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 100 mm and not greater than 101.6 mm, the indium phosphide crystal substrate contains tin atoms at a concentration not lower than 1.0 x 10 18 c m- 3 and not higher than 4.0 x 10 18 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 2200 cm⁻² and not higher than 5000 cm 2. New
The indium phosphide crystal substrate according to claim 5, wherein the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 1.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 c m- 2 and not higher than 5000 c n- 2. New
The indium phosphide crystal substrate according to claim 5, wherein the main surface has a diameter not smaller than 152.4 mm and not greater than 205 mm, the indium phosphide crystal substrate contains iron atoms at a concentration not lower than 5.0 x 10 15 cm⁻³ and not higher than 2.0 x 10 16 cm⁻³, and the indium phosphide crystal substrate has an average dislocation density not lower than 500 cm- 2 and not higher than 5000 cm⁻². New
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide crystal substrate
Materials described outside the worked examples.
indium phosphide
InP
sulfur dopant
S
tin dopant
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
average dislocation density (S-doped, first flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, first flat/notch region) | 500–5000 cm⁻² |
Table 1
Table 1 summarizes a crack defect ratio in manufacturing of the sub
p. 28
Table 2
Table 1 summarizes a crack defect ratio in manufacturing of the substrate and Table 2 summarizes a crack defect ratio in growth of the epitaxial
p. 28
Table 3
Table 3 summarizes a crac k defect ratio in manufacturing of the su
p. 29
Table 4
Table 3 summarizes a crac k defect ratio in manufacturing of the substrate and Table 4 summarizes a crack defect ratio in growth of the epitaxial
p. 29
Related documents with shared materials, methods, properties, or citations.
iron dopant
Fe
average residual strain (first flat/notch region) | 0.000005–0.00005 dimensionless | InP |
average dislocation density (S-doped, second flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, second flat/notch region) | 500–5000 cm⁻² | InP |
average residual strain (second flat/notch region) | 0.000005–0.00005 dimensionless | InP |
Thickness | 500–4900 cm | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 101.6 mm | — |
Table 5
Table 5 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 6
Table 5 summarizes a crack defect ratio in manufacturing of the substrate and Table 6 summarizes a crack defect rati o in gr owth of the epitaxia
p. 30
Table 7
VG 16607228.10-22-2019.K₂₂₆CTZNRXEAPX0.SPEC.35.32.501.2555.682.2596.svg 0.137 0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 8
0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the substrate and Table 8 su mm arizes a crack defect ratio in growth of the epitaxia
p. 30
Table 9
Table 9 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 10
Table 9 summarizes a crack defect ratio in manufacturing of the substrate and Table 10 su mm arizes a crack defect ratio in growth of the epitaxia
p. 31
Table 11
Table 11 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 12
Table 11 summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crac k defect ratio in grow th of the epitaxia
p. 31
Table 15
Table 15 summarizes a crack defect ratio in manufacturing of the sub
p. 32
Table 16
Table 15 summarizes a crack defect ratio in manufacturing of the substrate and Table 16 su mm arizes a crack defect ratio in growth of the epitaxia
p. 32
Table 17
Table 17 summarizes a crack defect ratio in manufacturing of the sub
p. 33
Table 18
SVG 16607228.
p. 33
Table 19
Table 19 summarizes a crack defect r atio in manufacturing of the su
p. 34
Table 20
Table 19 summarizes a crack defect r atio in manufacturing of the substrate and Table 20 s u mmarizes a c r ack defect r atio in growth of the epita
p. 35
Table 21
Table 21 summarizes a crack defect ratio in manufacturing of the sub
p. 35
Table 22
Table 21 summarizes a crack defect ratio in manufacturing of the substrate and Table 22 summarizes a crack defect ratio in gr o wth of the epitaxia
p. 35
Table 23
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of th
p. 37
Table 24
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of the substrate and Table 24 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 26
Table 25 summarizes a crack defect ratio in manufacturing of the substrate and Table 26 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 27
Table 27 summarizes a crack defect ratio in manufacturing of the sub
p. 38
Table 28
Table 27 summarizes a crack defect ratio in manufacturing of the substrate and Table 28 summarizes a crack defect ratio in growth of the epitaxial
p. 38
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
iron dopant
Fe
average residual strain (first flat/notch region) | 0.000005–0.00005 dimensionless | InP |
average dislocation density (S-doped, second flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, second flat/notch region) | 500–5000 cm⁻² | InP |
average residual strain (second flat/notch region) | 0.000005–0.00005 dimensionless | InP |
Thickness | 500–4900 cm | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 101.6 mm | — |
Table 5
Table 5 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 6
Table 5 summarizes a crack defect ratio in manufacturing of the substrate and Table 6 summarizes a crack defect rati o in gr owth of the epitaxia
p. 30
Table 7
VG 16607228.10-22-2019.K₂₂₆CTZNRXEAPX0.SPEC.35.32.501.2555.682.2596.svg 0.137 0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 8
0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the substrate and Table 8 su mm arizes a crack defect ratio in growth of the epitaxia
p. 30
Table 9
Table 9 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 10
Table 9 summarizes a crack defect ratio in manufacturing of the substrate and Table 10 su mm arizes a crack defect ratio in growth of the epitaxia
p. 31
Table 11
Table 11 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 12
Table 11 summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crac k defect ratio in grow th of the epitaxia
p. 31
Table 15
Table 15 summarizes a crack defect ratio in manufacturing of the sub
p. 32
Table 16
Table 15 summarizes a crack defect ratio in manufacturing of the substrate and Table 16 su mm arizes a crack defect ratio in growth of the epitaxia
p. 32
Table 17
Table 17 summarizes a crack defect ratio in manufacturing of the sub
p. 33
Table 18
SVG 16607228.
p. 33
Table 19
Table 19 summarizes a crack defect r atio in manufacturing of the su
p. 34
Table 20
Table 19 summarizes a crack defect r atio in manufacturing of the substrate and Table 20 s u mmarizes a c r ack defect r atio in growth of the epita
p. 35
Table 21
Table 21 summarizes a crack defect ratio in manufacturing of the sub
p. 35
Table 22
Table 21 summarizes a crack defect ratio in manufacturing of the substrate and Table 22 summarizes a crack defect ratio in gr o wth of the epitaxia
p. 35
Table 23
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of th
p. 37
Table 24
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of the substrate and Table 24 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 26
Table 25 summarizes a crack defect ratio in manufacturing of the substrate and Table 26 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 27
Table 27 summarizes a crack defect ratio in manufacturing of the sub
p. 38
Table 28
Table 27 summarizes a crack defect ratio in manufacturing of the substrate and Table 28 summarizes a crack defect ratio in growth of the epitaxial
p. 38
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
iron dopant
Fe
average residual strain (first flat/notch region) | 0.000005–0.00005 dimensionless | InP |
average dislocation density (S-doped, second flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, second flat/notch region) | 500–5000 cm⁻² | InP |
average residual strain (second flat/notch region) | 0.000005–0.00005 dimensionless | InP |
Thickness | 500–4900 cm | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 101.6 mm | — |
Table 5
Table 5 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 6
Table 5 summarizes a crack defect ratio in manufacturing of the substrate and Table 6 summarizes a crack defect rati o in gr owth of the epitaxia
p. 30
Table 7
VG 16607228.10-22-2019.K₂₂₆CTZNRXEAPX0.SPEC.35.32.501.2555.682.2596.svg 0.137 0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 8
0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the substrate and Table 8 su mm arizes a crack defect ratio in growth of the epitaxia
p. 30
Table 9
Table 9 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 10
Table 9 summarizes a crack defect ratio in manufacturing of the substrate and Table 10 su mm arizes a crack defect ratio in growth of the epitaxia
p. 31
Table 11
Table 11 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 12
Table 11 summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crac k defect ratio in grow th of the epitaxia
p. 31
Table 15
Table 15 summarizes a crack defect ratio in manufacturing of the sub
p. 32
Table 16
Table 15 summarizes a crack defect ratio in manufacturing of the substrate and Table 16 su mm arizes a crack defect ratio in growth of the epitaxia
p. 32
Table 17
Table 17 summarizes a crack defect ratio in manufacturing of the sub
p. 33
Table 18
SVG 16607228.
p. 33
Table 19
Table 19 summarizes a crack defect r atio in manufacturing of the su
p. 34
Table 20
Table 19 summarizes a crack defect r atio in manufacturing of the substrate and Table 20 s u mmarizes a c r ack defect r atio in growth of the epita
p. 35
Table 21
Table 21 summarizes a crack defect ratio in manufacturing of the sub
p. 35
Table 22
Table 21 summarizes a crack defect ratio in manufacturing of the substrate and Table 22 summarizes a crack defect ratio in gr o wth of the epitaxia
p. 35
Table 23
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of th
p. 37
Table 24
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of the substrate and Table 24 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 26
Table 25 summarizes a crack defect ratio in manufacturing of the substrate and Table 26 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 27
Table 27 summarizes a crack defect ratio in manufacturing of the sub
p. 38
Table 28
Table 27 summarizes a crack defect ratio in manufacturing of the substrate and Table 28 summarizes a crack defect ratio in growth of the epitaxial
p. 38
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS
iron dopant
Fe
average residual strain (first flat/notch region) | 0.000005–0.00005 dimensionless | InP |
average dislocation density (S-doped, second flat/notch region) | 10–500 cm⁻² | InP |
average dislocation density (Sn- or Fe-doped, second flat/notch region) | 500–5000 cm⁻² | InP |
average residual strain (second flat/notch region) | 0.000005–0.00005 dimensionless | InP |
Thickness | 500–4900 cm | — |
Thickness | ≥ 205 mm | — |
Thickness | ≥ 1.5 mm | — |
Thickness | ≥ 101.6 mm | — |
Table 5
Table 5 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 6
Table 5 summarizes a crack defect ratio in manufacturing of the substrate and Table 6 summarizes a crack defect rati o in gr owth of the epitaxia
p. 30
Table 7
VG 16607228.10-22-2019.K₂₂₆CTZNRXEAPX0.SPEC.35.32.501.2555.682.2596.svg 0.137 0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the sub
p. 30
Table 8
0.603 Chemistry Black and white Table 7 summarizes a crack defect ratio in manufacturing of the substrate and Table 8 su mm arizes a crack defect ratio in growth of the epitaxia
p. 30
Table 9
Table 9 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 10
Table 9 summarizes a crack defect ratio in manufacturing of the substrate and Table 10 su mm arizes a crack defect ratio in growth of the epitaxia
p. 31
Table 11
Table 11 summarizes a crack defect ratio in manufacturing of the sub
p. 31
Table 12
Table 11 summarizes a crack defect ratio in manufacturing of the substrate and Table 12 summarizes a crac k defect ratio in grow th of the epitaxia
p. 31
Table 15
Table 15 summarizes a crack defect ratio in manufacturing of the sub
p. 32
Table 16
Table 15 summarizes a crack defect ratio in manufacturing of the substrate and Table 16 su mm arizes a crack defect ratio in growth of the epitaxia
p. 32
Table 17
Table 17 summarizes a crack defect ratio in manufacturing of the sub
p. 33
Table 18
SVG 16607228.
p. 33
Table 19
Table 19 summarizes a crack defect r atio in manufacturing of the su
p. 34
Table 20
Table 19 summarizes a crack defect r atio in manufacturing of the substrate and Table 20 s u mmarizes a c r ack defect r atio in growth of the epita
p. 35
Table 21
Table 21 summarizes a crack defect ratio in manufacturing of the sub
p. 35
Table 22
Table 21 summarizes a crack defect ratio in manufacturing of the substrate and Table 22 summarizes a crack defect ratio in gr o wth of the epitaxia
p. 35
Table 23
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of th
p. 37
Table 24
Table 23 s u mmarizes a crack defect ratio in in anufacturi ng of the substrate and Table 24 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 26
Table 25 summarizes a crack defect ratio in manufacturing of the substrate and Table 26 summarizes a crack defect ratio in growth of the epitaxial
p. 37
Table 27
Table 27 summarizes a crack defect ratio in manufacturing of the sub
p. 38
Table 28
Table 27 summarizes a crack defect ratio in manufacturing of the substrate and Table 28 summarizes a crack defect ratio in growth of the epitaxial
p. 38
BIASING METHOD FOR InP MACH-ZEHNDER MODULATORS DIRECTLY COUPLED TO RF DRIVER CIRCUITS