Patent
Atlas literature
Patent
US 11,926,924 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional schematic diagram of an LEC furnace used in the LEC method according to an embodi- ment of the present invention;
FIG. 2 is a graph showing the relationship between 55 furnace temperature and furnace pressure during a tempera- ture rising process in the LEC furnace …
FIG. 3 is a graph showing the relationship between furnace temperature and furnace pressure during a tempera- 60 ture rising process in a conventional LEC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein the indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.
The indium phosphide substrate according to claim 1, wherein the indium phosphide substrate has a diameter of to 100 mm.
A semiconductor epitaxial wafer, comprising the indium phosphide substrate according to claim 1, and an epitaxial crystal layer on a main surface of the indium phosphide substrate.
A method for producing an indium phosphide single-crystal ingot, wherein a crucible is installed in an LEC furnace, raw materials and an encapsulant are installed in the cru-cible, the raw materials and the encapsulant are heated and melted by a heater, and a seed crystal is brought into contact with a surface of a generated raw material melt and gradually pulled up to grow an indium phos-phide single crystal, and wherein the indium phosphide single crystal is grown by pulling up the seed crystal after increasing a tempera-ture in the LEC furnace from room temperature to between 500° C. and 600° C. while maintaining a vacuum of 15 Pa or less, followed by increasing a pressure in the LEC furnace to any pressure in the range between 2.0×106 Pa and 4.0×106 Pa.
A method for producing an indium phosphide substrate, comprising a process of cutting an indium phosphide substrate from the indium phosphide single-crystal ingot produced by the method for producing an indium phosphide single-crystal ingot according to claim 5.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
semiconductor epitaxial wafer
Materials described outside the worked examples.
indium phosphide
InP
boron oxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
concave defects in topography channel | 0 count | InP |
Temperature | 500–600 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,926,924 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional schematic diagram of an LEC furnace used in the LEC method according to an embodi- ment of the present invention;
FIG. 2 is a graph showing the relationship between 55 furnace temperature and furnace pressure during a tempera- ture rising process in the LEC furnace …
FIG. 3 is a graph showing the relationship between furnace temperature and furnace pressure during a tempera- 60 ture rising process in a conventional LEC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein the indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.
The indium phosphide substrate according to claim 1, wherein the indium phosphide substrate has a diameter of to 100 mm.
A semiconductor epitaxial wafer, comprising the indium phosphide substrate according to claim 1, and an epitaxial crystal layer on a main surface of the indium phosphide substrate.
A method for producing an indium phosphide single-crystal ingot, wherein a crucible is installed in an LEC furnace, raw materials and an encapsulant are installed in the cru-cible, the raw materials and the encapsulant are heated and melted by a heater, and a seed crystal is brought into contact with a surface of a generated raw material melt and gradually pulled up to grow an indium phos-phide single crystal, and wherein the indium phosphide single crystal is grown by pulling up the seed crystal after increasing a tempera-ture in the LEC furnace from room temperature to between 500° C. and 600° C. while maintaining a vacuum of 15 Pa or less, followed by increasing a pressure in the LEC furnace to any pressure in the range between 2.0×106 Pa and 4.0×106 Pa.
A method for producing an indium phosphide substrate, comprising a process of cutting an indium phosphide substrate from the indium phosphide single-crystal ingot produced by the method for producing an indium phosphide single-crystal ingot according to claim 5.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
semiconductor epitaxial wafer
Materials described outside the worked examples.
indium phosphide
InP
boron oxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
concave defects in topography channel | 0 count | InP |
Temperature | 500–600 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,926,924 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional schematic diagram of an LEC furnace used in the LEC method according to an embodi- ment of the present invention;
FIG. 2 is a graph showing the relationship between 55 furnace temperature and furnace pressure during a tempera- ture rising process in the LEC furnace …
FIG. 3 is a graph showing the relationship between furnace temperature and furnace pressure during a tempera- 60 ture rising process in a conventional LEC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein the indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.
The indium phosphide substrate according to claim 1, wherein the indium phosphide substrate has a diameter of to 100 mm.
A semiconductor epitaxial wafer, comprising the indium phosphide substrate according to claim 1, and an epitaxial crystal layer on a main surface of the indium phosphide substrate.
A method for producing an indium phosphide single-crystal ingot, wherein a crucible is installed in an LEC furnace, raw materials and an encapsulant are installed in the cru-cible, the raw materials and the encapsulant are heated and melted by a heater, and a seed crystal is brought into contact with a surface of a generated raw material melt and gradually pulled up to grow an indium phos-phide single crystal, and wherein the indium phosphide single crystal is grown by pulling up the seed crystal after increasing a tempera-ture in the LEC furnace from room temperature to between 500° C. and 600° C. while maintaining a vacuum of 15 Pa or less, followed by increasing a pressure in the LEC furnace to any pressure in the range between 2.0×106 Pa and 4.0×106 Pa.
A method for producing an indium phosphide substrate, comprising a process of cutting an indium phosphide substrate from the indium phosphide single-crystal ingot produced by the method for producing an indium phosphide single-crystal ingot according to claim 5.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
semiconductor epitaxial wafer
Materials described outside the worked examples.
indium phosphide
InP
boron oxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
concave defects in topography channel | 0 count | InP |
Temperature | 500–600 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 11,926,924 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a cross-sectional schematic diagram of an LEC furnace used in the LEC method according to an embodi- ment of the present invention;
FIG. 2 is a graph showing the relationship between 55 furnace temperature and furnace pressure during a tempera- ture rising process in the LEC furnace …
FIG. 3 is a graph showing the relationship between furnace temperature and furnace pressure during a tempera- 60 ture rising process in a conventional LEC …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An indium phosphide substrate, wherein the indium phosphide substrate has a diameter of 100 mm or less, and at least one of surfaces has zero concave defects detected in the topography channel, by irradiating a laser beam of 405 nm wavelength with S-polarized light on the surface.
The indium phosphide substrate according to claim 1, wherein the indium phosphide substrate has a diameter of to 100 mm.
A semiconductor epitaxial wafer, comprising the indium phosphide substrate according to claim 1, and an epitaxial crystal layer on a main surface of the indium phosphide substrate.
A method for producing an indium phosphide single-crystal ingot, wherein a crucible is installed in an LEC furnace, raw materials and an encapsulant are installed in the cru-cible, the raw materials and the encapsulant are heated and melted by a heater, and a seed crystal is brought into contact with a surface of a generated raw material melt and gradually pulled up to grow an indium phos-phide single crystal, and wherein the indium phosphide single crystal is grown by pulling up the seed crystal after increasing a tempera-ture in the LEC furnace from room temperature to between 500° C. and 600° C. while maintaining a vacuum of 15 Pa or less, followed by increasing a pressure in the LEC furnace to any pressure in the range between 2.0×106 Pa and 4.0×106 Pa.
A method for producing an indium phosphide substrate, comprising a process of cutting an indium phosphide substrate from the indium phosphide single-crystal ingot produced by the method for producing an indium phosphide single-crystal ingot according to claim 5.
Layer stacks claimed or described, ordered top of device to substrate.
indium phosphide substrate
semiconductor epitaxial wafer
Materials described outside the worked examples.
indium phosphide
InP
boron oxide encapsulant
B₂O₃
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
concave defects in topography channel | 0 count | InP |
Temperature | 500–600 °C |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 9
Related documents with shared materials, methods, properties, or citations.
| — |
Thickness | 20–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 50–100 mm | — |
Thickness | 50–76.2 mm | — |
Temperature | 15–20 °C | — |
Temperature | 1050–1300 °C | — |
Pressure | 4–5 MPa | — |
Thickness | 5–20 mm | — |
Temperature | 85–130 °C | — |
Temperature | 10–30 °C | — |
Cited non-patent literature · 2
| — |
Thickness | 20–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 50–100 mm | — |
Thickness | 50–76.2 mm | — |
Temperature | 15–20 °C | — |
Temperature | 1050–1300 °C | — |
Pressure | 4–5 MPa | — |
Thickness | 5–20 mm | — |
Temperature | 85–130 °C | — |
Temperature | 10–30 °C | — |
Cited non-patent literature · 2
| — |
Thickness | 20–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 50–100 mm | — |
Thickness | 50–76.2 mm | — |
Temperature | 15–20 °C | — |
Temperature | 1050–1300 °C | — |
Pressure | 4–5 MPa | — |
Thickness | 5–20 mm | — |
Temperature | 85–130 °C | — |
Temperature | 10–30 °C | — |
Cited non-patent literature · 2
| — |
Thickness | 20–100 µm | — |
Thickness | 1–5 µm | — |
Thickness | 50–100 mm | — |
Thickness | 50–76.2 mm | — |
Temperature | 15–20 °C | — |
Temperature | 1050–1300 °C | — |
Pressure | 4–5 MPa | — |
Thickness | 5–20 mm | — |
Temperature | 85–130 °C | — |
Temperature | 10–30 °C | — |
Cited non-patent literature · 2
