Patent details
Patent
US 11,630,370 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating traditional biasing in an optical transmitter comprising an MZ interfer- ometer and an AC coupled driver circuit;
FIG. 2 is a schematic diagram illustrating biasing in an 50 optical transmitter comprising directly coupled MZ interfer- ometer and driver circuit;
FIG. 3 illustrates a biasing and capacitive coupling scheme for use in the transmitter of
FIG. 4C is another alternative cross sectional view 60 through line AA' of
FIG. 5 illustrates a an alternative biasing and capacitive coupling scheme for use in the transmitter of
FIG. 6 illustrates an alternative biasing and capacitive 65 coupling scheme for use in the transmitter of
FIG. 7A is a cross sectional view through line BB' of
FIG. 8 illustrates in-plane (a, b, c) and vertical (d) on-chip resistor geometry.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Mach-Zehnder (MZ) interferometer, comprising: a first coupling configured to receive a direct current (DC) supply; a pair of differentially driven MZ electrodes configured to: impart radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer, and receive a DC bias as a positive voltage via lower n-type cladding of the MZ interferometer, the lower n-type cladding being at a different posi-tive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; a second coupling configured to transmit the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; a pair of resistors to provide differential RF termination of the pair of differentially driven MZ electrodes; and a capacitive coupling located between a virtual ground and an RF ground, the virtual ground being formed at a center point between the pair of resistors.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is configured to: provide common-mode RF termination.
The MZ interferometer of claim 1, wherein the DC supply is applied to the center point via an inductive wirebond connection.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is provided by one or more on-chip capacitors.
The MZ interferometer of claim 1, wherein the pair of resistors are configured in series.
The MZ interferometer of claim 1, wherein the pair of resistors provide a total of 50 to 100 ohms of differential termination impedance.
The MZ interferometer of claim 1, wherein the second coupling is further configured to directly couple the MZ interferometer and a driver circuit.
The MZ interferometer of claim 1, wherein the differential RF termination is provided on-chip.
The MZ interferometer of claim 1, wherein the pair of differentially driven MZ electrodes are microstrip-type MZ electrodes.
A method, comprising: applying a direct current (DC) supply to a first coupling of a Mach-Zehnder (MZ) interferometer; imparting, via a pair of differentially driven MZ elec-trodes of the MZ interferometer, radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer; applying, via lower n-type cladding of the MZ interfer-ometer, a DC bias as a positive voltage to the pair of differentially driven MZ electrodes, the lower n-type cladding being at a different positive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; transmitting, via a second coupling of the MZ interfer-ometer, the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; and providing, via a capacitive coupling, common-mode RF termination, the capacitive coupling being located between a virtual ground and an RF ground, and the virtual ground being formed at a center point between a pair of resistors of the MZ interferometer.
The method of claim 10, further comprising: providing, via the pair of resistors of the MZ interferom-eter, differential RF termination of the pair of differ-entially driven MZ electrodes.
The method of claim 10, wherein applying the DC supply comprises: applying the DC supply to the center point via an induc-tive wirebond connection.
The method of claim 10, wherein the capacitive coupling is provided via one or more on-chip capacitors.
The method of claim 10, wherein the pair of resistors are configured in series.
The method of claim 10, further comprising: directly coupling, via the second coupling, the MZ interferometer and a driver circuit.
The method of claim 10, wherein the pair of differ-entially driven MZ electrodes are microstrip-type MZ elec-trodes. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP Mach-Zehnder interferometer with directly coupled RF driver circuit
Materials described outside the worked examples.
InP (Indium Phosphide)
InP
n-type cladding (lower)
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Patent details
Patent
US 11,630,370 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating traditional biasing in an optical transmitter comprising an MZ interfer- ometer and an AC coupled driver circuit;
FIG. 2 is a schematic diagram illustrating biasing in an 50 optical transmitter comprising directly coupled MZ interfer- ometer and driver circuit;
FIG. 3 illustrates a biasing and capacitive coupling scheme for use in the transmitter of
FIG. 4C is another alternative cross sectional view 60 through line AA' of
FIG. 5 illustrates a an alternative biasing and capacitive coupling scheme for use in the transmitter of
FIG. 6 illustrates an alternative biasing and capacitive 65 coupling scheme for use in the transmitter of
FIG. 7A is a cross sectional view through line BB' of
FIG. 8 illustrates in-plane (a, b, c) and vertical (d) on-chip resistor geometry.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Mach-Zehnder (MZ) interferometer, comprising: a first coupling configured to receive a direct current (DC) supply; a pair of differentially driven MZ electrodes configured to: impart radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer, and receive a DC bias as a positive voltage via lower n-type cladding of the MZ interferometer, the lower n-type cladding being at a different posi-tive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; a second coupling configured to transmit the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; a pair of resistors to provide differential RF termination of the pair of differentially driven MZ electrodes; and a capacitive coupling located between a virtual ground and an RF ground, the virtual ground being formed at a center point between the pair of resistors.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is configured to: provide common-mode RF termination.
The MZ interferometer of claim 1, wherein the DC supply is applied to the center point via an inductive wirebond connection.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is provided by one or more on-chip capacitors.
The MZ interferometer of claim 1, wherein the pair of resistors are configured in series.
The MZ interferometer of claim 1, wherein the pair of resistors provide a total of 50 to 100 ohms of differential termination impedance.
The MZ interferometer of claim 1, wherein the second coupling is further configured to directly couple the MZ interferometer and a driver circuit.
The MZ interferometer of claim 1, wherein the differential RF termination is provided on-chip.
The MZ interferometer of claim 1, wherein the pair of differentially driven MZ electrodes are microstrip-type MZ electrodes.
A method, comprising: applying a direct current (DC) supply to a first coupling of a Mach-Zehnder (MZ) interferometer; imparting, via a pair of differentially driven MZ elec-trodes of the MZ interferometer, radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer; applying, via lower n-type cladding of the MZ interfer-ometer, a DC bias as a positive voltage to the pair of differentially driven MZ electrodes, the lower n-type cladding being at a different positive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; transmitting, via a second coupling of the MZ interfer-ometer, the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; and providing, via a capacitive coupling, common-mode RF termination, the capacitive coupling being located between a virtual ground and an RF ground, and the virtual ground being formed at a center point between a pair of resistors of the MZ interferometer.
The method of claim 10, further comprising: providing, via the pair of resistors of the MZ interferom-eter, differential RF termination of the pair of differ-entially driven MZ electrodes.
The method of claim 10, wherein applying the DC supply comprises: applying the DC supply to the center point via an induc-tive wirebond connection.
The method of claim 10, wherein the capacitive coupling is provided via one or more on-chip capacitors.
The method of claim 10, wherein the pair of resistors are configured in series.
The method of claim 10, further comprising: directly coupling, via the second coupling, the MZ interferometer and a driver circuit.
The method of claim 10, wherein the pair of differ-entially driven MZ electrodes are microstrip-type MZ elec-trodes. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP Mach-Zehnder interferometer with directly coupled RF driver circuit
Materials described outside the worked examples.
InP (Indium Phosphide)
InP
n-type cladding (lower)
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,630,370 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating traditional biasing in an optical transmitter comprising an MZ interfer- ometer and an AC coupled driver circuit;
FIG. 2 is a schematic diagram illustrating biasing in an 50 optical transmitter comprising directly coupled MZ interfer- ometer and driver circuit;
FIG. 3 illustrates a biasing and capacitive coupling scheme for use in the transmitter of
FIG. 4C is another alternative cross sectional view 60 through line AA' of
FIG. 5 illustrates a an alternative biasing and capacitive coupling scheme for use in the transmitter of
FIG. 6 illustrates an alternative biasing and capacitive 65 coupling scheme for use in the transmitter of
FIG. 7A is a cross sectional view through line BB' of
FIG. 8 illustrates in-plane (a, b, c) and vertical (d) on-chip resistor geometry.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Mach-Zehnder (MZ) interferometer, comprising: a first coupling configured to receive a direct current (DC) supply; a pair of differentially driven MZ electrodes configured to: impart radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer, and receive a DC bias as a positive voltage via lower n-type cladding of the MZ interferometer, the lower n-type cladding being at a different posi-tive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; a second coupling configured to transmit the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; a pair of resistors to provide differential RF termination of the pair of differentially driven MZ electrodes; and a capacitive coupling located between a virtual ground and an RF ground, the virtual ground being formed at a center point between the pair of resistors.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is configured to: provide common-mode RF termination.
The MZ interferometer of claim 1, wherein the DC supply is applied to the center point via an inductive wirebond connection.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is provided by one or more on-chip capacitors.
The MZ interferometer of claim 1, wherein the pair of resistors are configured in series.
The MZ interferometer of claim 1, wherein the pair of resistors provide a total of 50 to 100 ohms of differential termination impedance.
The MZ interferometer of claim 1, wherein the second coupling is further configured to directly couple the MZ interferometer and a driver circuit.
The MZ interferometer of claim 1, wherein the differential RF termination is provided on-chip.
The MZ interferometer of claim 1, wherein the pair of differentially driven MZ electrodes are microstrip-type MZ electrodes.
A method, comprising: applying a direct current (DC) supply to a first coupling of a Mach-Zehnder (MZ) interferometer; imparting, via a pair of differentially driven MZ elec-trodes of the MZ interferometer, radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer; applying, via lower n-type cladding of the MZ interfer-ometer, a DC bias as a positive voltage to the pair of differentially driven MZ electrodes, the lower n-type cladding being at a different positive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; transmitting, via a second coupling of the MZ interfer-ometer, the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; and providing, via a capacitive coupling, common-mode RF termination, the capacitive coupling being located between a virtual ground and an RF ground, and the virtual ground being formed at a center point between a pair of resistors of the MZ interferometer.
The method of claim 10, further comprising: providing, via the pair of resistors of the MZ interferom-eter, differential RF termination of the pair of differ-entially driven MZ electrodes.
The method of claim 10, wherein applying the DC supply comprises: applying the DC supply to the center point via an induc-tive wirebond connection.
The method of claim 10, wherein the capacitive coupling is provided via one or more on-chip capacitors.
The method of claim 10, wherein the pair of resistors are configured in series.
The method of claim 10, further comprising: directly coupling, via the second coupling, the MZ interferometer and a driver circuit.
The method of claim 10, wherein the pair of differ-entially driven MZ electrodes are microstrip-type MZ elec-trodes. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP Mach-Zehnder interferometer with directly coupled RF driver circuit
Materials described outside the worked examples.
InP (Indium Phosphide)
InP
n-type cladding (lower)
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent details
Patent
US 11,630,370 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1 is a schematic diagram illustrating traditional biasing in an optical transmitter comprising an MZ interfer- ometer and an AC coupled driver circuit;
FIG. 2 is a schematic diagram illustrating biasing in an 50 optical transmitter comprising directly coupled MZ interfer- ometer and driver circuit;
FIG. 3 illustrates a biasing and capacitive coupling scheme for use in the transmitter of
FIG. 4C is another alternative cross sectional view 60 through line AA' of
FIG. 5 illustrates a an alternative biasing and capacitive coupling scheme for use in the transmitter of
FIG. 6 illustrates an alternative biasing and capacitive 65 coupling scheme for use in the transmitter of
FIG. 7A is a cross sectional view through line BB' of
FIG. 8 illustrates in-plane (a, b, c) and vertical (d) on-chip resistor geometry.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A Mach-Zehnder (MZ) interferometer, comprising: a first coupling configured to receive a direct current (DC) supply; a pair of differentially driven MZ electrodes configured to: impart radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer, and receive a DC bias as a positive voltage via lower n-type cladding of the MZ interferometer, the lower n-type cladding being at a different posi-tive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; a second coupling configured to transmit the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; a pair of resistors to provide differential RF termination of the pair of differentially driven MZ electrodes; and a capacitive coupling located between a virtual ground and an RF ground, the virtual ground being formed at a center point between the pair of resistors.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is configured to: provide common-mode RF termination.
The MZ interferometer of claim 1, wherein the DC supply is applied to the center point via an inductive wirebond connection.
The MZ interferometer of claim 1, wherein the capaci-tive coupling is provided by one or more on-chip capacitors.
The MZ interferometer of claim 1, wherein the pair of resistors are configured in series.
The MZ interferometer of claim 1, wherein the pair of resistors provide a total of 50 to 100 ohms of differential termination impedance.
The MZ interferometer of claim 1, wherein the second coupling is further configured to directly couple the MZ interferometer and a driver circuit.
The MZ interferometer of claim 1, wherein the differential RF termination is provided on-chip.
The MZ interferometer of claim 1, wherein the pair of differentially driven MZ electrodes are microstrip-type MZ electrodes.
A method, comprising: applying a direct current (DC) supply to a first coupling of a Mach-Zehnder (MZ) interferometer; imparting, via a pair of differentially driven MZ elec-trodes of the MZ interferometer, radio frequency (RF) signals to light travelling through respective arms of the MZ interferometer; applying, via lower n-type cladding of the MZ interfer-ometer, a DC bias as a positive voltage to the pair of differentially driven MZ electrodes, the lower n-type cladding being at a different positive DC potential than an upper plane RF ground of the MZ interferometer and having a similar alternating current (AC) potential to the upper plane RF ground; transmitting, via a second coupling of the MZ interfer-ometer, the DC supply received from the first coupling through the pair of differentially driven MZ electrodes; and providing, via a capacitive coupling, common-mode RF termination, the capacitive coupling being located between a virtual ground and an RF ground, and the virtual ground being formed at a center point between a pair of resistors of the MZ interferometer.
The method of claim 10, further comprising: providing, via the pair of resistors of the MZ interferom-eter, differential RF termination of the pair of differ-entially driven MZ electrodes.
The method of claim 10, wherein applying the DC supply comprises: applying the DC supply to the center point via an induc-tive wirebond connection.
The method of claim 10, wherein the capacitive coupling is provided via one or more on-chip capacitors.
The method of claim 10, wherein the pair of resistors are configured in series.
The method of claim 10, further comprising: directly coupling, via the second coupling, the MZ interferometer and a driver circuit.
The method of claim 10, wherein the pair of differ-entially driven MZ electrodes are microstrip-type MZ elec-trodes. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
InP Mach-Zehnder interferometer with directly coupled RF driver circuit
Materials described outside the worked examples.
InP (Indium Phosphide)
InP
n-type cladding (lower)
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Cited non-patent literature · 2
Cited non-patent literature · 2
Cited non-patent literature · 2
Cited non-patent literature · 2
