Patent
US 10,283,674GRAPHENE-BASED SOLID STATE DEVICES CAPABLE OF EMITTING ELECTROMAGNETIC RADIATION AND IMPROVEMENTS THEREOF
Jay P. Morreale
US
Copyright © 2026 Matter42. All rights reserved.
Patent
Atlas literature
Patent
US 10,283,674Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 2A depicts the Top Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 2B depicts the Bottom Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 3 depicts Undulator Perpendicular Magnetic Fields developed from an embodiment of a magnetic array.
Figure 4 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets. The arrow illustrates the general current direction.
Figure 5 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets with a Graphene layer disposed therebetween.
Figure 6 depicts and Electron Radiation Pattern emanating from an accelerated electron.
Figure 7A illustrates a top-down view of an embodiment of a solid device according to the present invention.
Figure 7B depicts a cross-sectional side view of the device in
Figure 8 depicts a perspective 3D drawing of an embodiment of a solid state device according to the present invention.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 11 lists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention.
Figure 12A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 12B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 13 depicts a top-down view of an embodiment of a solid state device according to the present invention incorporating a Curved Periodic Graphene Path.
Figure 14A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 14B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 15 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoimprint Implementation.
Figure 16 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoribbon Implementation.
Figure 17 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Pulsed Output Implementation.
Figure 18 illustrates a Pulsed EM Output Sequence of a solid state device according to the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
Figure 20 provides an embodiment of a method for growing and patterning graphene on copper.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A solid state device capable of emitting electromagnetic radiation, comprising: a gate layer capable of controlling electron density in one or more upper layers; a first dielectric layer disposed directly on the gate layer; a graphene layer disposed adjacent to the first dielectric layer; a source disposed adjacent to, and in electrical communication with, the graphene layer; a drain disposed adjacent to, and in electrical communication with, the graphene layer, wherein the source and the drain are disposed at distal ends of the graphene layer, wherein application of an electromotive force between the source and drain gives rise to an electrical current in the graphene layer; and an alternating magnetic field source disposed proximate to the at least one graphene layer, wherein operation of the alternating magnetic field source gives rise to an alternating magnetic field oriented substantially perpendicular to the graphene layer, wherein said alternating magnetic field is capable of being operatively coupled to said electrical current to give rise the electromagnetic radiation produced from the graphene layer, wherein the g raphene la v er is characterized as havin g one or more linear dimensions other than its thickness, wherein the one or more linear dimensions have one or more of: at least about 1, 2, 3, 4, 5, 6, or 8 inches in diameter adjacent to a S iO 2 or a quartz wafer, on gl ass wafers havin g dimensions of about x 10 mm, about 20x 20 mm, about 100 x 100 mm, or from about 2 to 8 inches, about two inches in diameter on a standard S i C wafer, from about one inch square to about 4.5 inches square for an A 1 203 substrate, from about 1.9 inches square to 6 inches square for an A l N substrate, and about 30 inches wide by 200 feet long on a CVD roll-to-roll processing equipment; and about 1 m to about 97 cm for multiple devices in parallel. Currently amended
The solid state device of claim 1, wherein a plurality of layers forms a Field Effect Transistor structure for generating a field-effect n-doping or p-doping in the graphene layer. Original
The solid state device of claim 1, wherein the gate layer is capable of reflecting the electromagnetic radiation produced in the graphene layer disposed proximate to the gate layer. Original
The solid state device of claim 1, wherein the gate layer comprises one or more of the following material: conductors, doped semiconductors, doped Si, conductive polymers, ITO, transparent conductive polymers, and graphene. Original
The solid state device of claim 1, further comprising a substrate layer, wherein the gate layer is disposed adjacent to the substrate layer. Original
The solid state device of claim 1, wherein the first dielectric layer comprises one or more of the following materials: polymer dielectrics, inorganic insulators, electrolytes, S iO 2, A l N, BN, ZnO, A 120 3, HfO, ZrO2, diamond films, sapphire, quartz, glass, and S iC. Original
The solid state device of claim 1, wherein the alternating magnetic field source comprises one or more of the following: a Halback array, permanent magnets assembled in a collection with alternating field polarity, series of parallel wires with current flowing in alternating directions, electromagnets arranged in a collection with alternating field polarity, a magnetic film that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a magnetizable ferromagnetic metal that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a multilayer film deposited with an anti- ferromagnetic exchange bias pinning layer that alternates magnetic polarity on top of a ferromagnetic metal, an array of beams of polarized light, an array of beams of polarized laser light with alte rn ating B-field polarity, and periodic structures of dilute magnetic semiconductors arranged with alte rn ate polarity. Original
The solid state device of claim 1, wherein the alternating magnetic field source varies the magnetic field spatially, temporally, or any combination thereof. Original
The solid state device of claim 1, wherein the alte rn ating magnetic field source that varies the magnetic field spatially comprises one or more of the following: an array of Neodymium Iron Boron permanent magnets mounted and arranged with alternating magnetic poles; a Halback configuration having a magnetic period and capable of producing a 1500 to 3000 Gauss magnetic field perpendicular to the graphene layer; a magnetic array in a magnetic film comprising one or more ferromagnetic materials, the magnetic film comprising alternating field domains characterized as having a magnetic field strength of 10,000 to 20,000 Gauss with alternating field domains having a dimension as small as 180 nm; a magnetic array in a magnetic film comprising one or more anti-ferromagnetic materials characterized as having magnetic domains having a dimension as small as 400 nm; and an array of polarized light beams or an array polarized laser light beams with alte rn ating B-field polarity. Previously presented
The solid state device of claim 1, wherein the graphene layer is characterized as being a single layer thick of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer is characterized as multiple layers of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer comprises a dopant. Original
The solid state device of claim 1, further comprising a dielectric layer, wherein a second or more dielectric layers are optionally disposed on the graphene layer. Original
The solid state device of claim 1, wherein the source comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, wherein the drain comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, further comprising a back mirror disposed proximate to the source. Original
The solid state device of claim 1, further comprising a front filter disposed proximate to the drain. Original
5-6. Canceled
Canceled
Canceled
11-15. Canceled
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23-24. Canceled
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Canceled
30-34. Canceled
Canceled
36-38. Canceled
Canceled
Canceled
43-103. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based solid state electromagnetic radiation emitting device (FET structure)
Materials described outside the worked examples.
graphene
SiO₂
quartz
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,283,674Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 2A depicts the Top Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 2B depicts the Bottom Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 3 depicts Undulator Perpendicular Magnetic Fields developed from an embodiment of a magnetic array.
Figure 4 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets. The arrow illustrates the general current direction.
Figure 5 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets with a Graphene layer disposed therebetween.
Figure 6 depicts and Electron Radiation Pattern emanating from an accelerated electron.
Figure 7A illustrates a top-down view of an embodiment of a solid device according to the present invention.
Figure 7B depicts a cross-sectional side view of the device in
Figure 8 depicts a perspective 3D drawing of an embodiment of a solid state device according to the present invention.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 11 lists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention.
Figure 12A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 12B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 13 depicts a top-down view of an embodiment of a solid state device according to the present invention incorporating a Curved Periodic Graphene Path.
Figure 14A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 14B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 15 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoimprint Implementation.
Figure 16 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoribbon Implementation.
Figure 17 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Pulsed Output Implementation.
Figure 18 illustrates a Pulsed EM Output Sequence of a solid state device according to the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
Figure 20 provides an embodiment of a method for growing and patterning graphene on copper.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A solid state device capable of emitting electromagnetic radiation, comprising: a gate layer capable of controlling electron density in one or more upper layers; a first dielectric layer disposed directly on the gate layer; a graphene layer disposed adjacent to the first dielectric layer; a source disposed adjacent to, and in electrical communication with, the graphene layer; a drain disposed adjacent to, and in electrical communication with, the graphene layer, wherein the source and the drain are disposed at distal ends of the graphene layer, wherein application of an electromotive force between the source and drain gives rise to an electrical current in the graphene layer; and an alternating magnetic field source disposed proximate to the at least one graphene layer, wherein operation of the alternating magnetic field source gives rise to an alternating magnetic field oriented substantially perpendicular to the graphene layer, wherein said alternating magnetic field is capable of being operatively coupled to said electrical current to give rise the electromagnetic radiation produced from the graphene layer, wherein the g raphene la v er is characterized as havin g one or more linear dimensions other than its thickness, wherein the one or more linear dimensions have one or more of: at least about 1, 2, 3, 4, 5, 6, or 8 inches in diameter adjacent to a S iO 2 or a quartz wafer, on gl ass wafers havin g dimensions of about x 10 mm, about 20x 20 mm, about 100 x 100 mm, or from about 2 to 8 inches, about two inches in diameter on a standard S i C wafer, from about one inch square to about 4.5 inches square for an A 1 203 substrate, from about 1.9 inches square to 6 inches square for an A l N substrate, and about 30 inches wide by 200 feet long on a CVD roll-to-roll processing equipment; and about 1 m to about 97 cm for multiple devices in parallel. Currently amended
The solid state device of claim 1, wherein a plurality of layers forms a Field Effect Transistor structure for generating a field-effect n-doping or p-doping in the graphene layer. Original
The solid state device of claim 1, wherein the gate layer is capable of reflecting the electromagnetic radiation produced in the graphene layer disposed proximate to the gate layer. Original
The solid state device of claim 1, wherein the gate layer comprises one or more of the following material: conductors, doped semiconductors, doped Si, conductive polymers, ITO, transparent conductive polymers, and graphene. Original
The solid state device of claim 1, further comprising a substrate layer, wherein the gate layer is disposed adjacent to the substrate layer. Original
The solid state device of claim 1, wherein the first dielectric layer comprises one or more of the following materials: polymer dielectrics, inorganic insulators, electrolytes, S iO 2, A l N, BN, ZnO, A 120 3, HfO, ZrO2, diamond films, sapphire, quartz, glass, and S iC. Original
The solid state device of claim 1, wherein the alternating magnetic field source comprises one or more of the following: a Halback array, permanent magnets assembled in a collection with alternating field polarity, series of parallel wires with current flowing in alternating directions, electromagnets arranged in a collection with alternating field polarity, a magnetic film that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a magnetizable ferromagnetic metal that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a multilayer film deposited with an anti- ferromagnetic exchange bias pinning layer that alternates magnetic polarity on top of a ferromagnetic metal, an array of beams of polarized light, an array of beams of polarized laser light with alte rn ating B-field polarity, and periodic structures of dilute magnetic semiconductors arranged with alte rn ate polarity. Original
The solid state device of claim 1, wherein the alternating magnetic field source varies the magnetic field spatially, temporally, or any combination thereof. Original
The solid state device of claim 1, wherein the alte rn ating magnetic field source that varies the magnetic field spatially comprises one or more of the following: an array of Neodymium Iron Boron permanent magnets mounted and arranged with alternating magnetic poles; a Halback configuration having a magnetic period and capable of producing a 1500 to 3000 Gauss magnetic field perpendicular to the graphene layer; a magnetic array in a magnetic film comprising one or more ferromagnetic materials, the magnetic film comprising alternating field domains characterized as having a magnetic field strength of 10,000 to 20,000 Gauss with alternating field domains having a dimension as small as 180 nm; a magnetic array in a magnetic film comprising one or more anti-ferromagnetic materials characterized as having magnetic domains having a dimension as small as 400 nm; and an array of polarized light beams or an array polarized laser light beams with alte rn ating B-field polarity. Previously presented
The solid state device of claim 1, wherein the graphene layer is characterized as being a single layer thick of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer is characterized as multiple layers of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer comprises a dopant. Original
The solid state device of claim 1, further comprising a dielectric layer, wherein a second or more dielectric layers are optionally disposed on the graphene layer. Original
The solid state device of claim 1, wherein the source comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, wherein the drain comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, further comprising a back mirror disposed proximate to the source. Original
The solid state device of claim 1, further comprising a front filter disposed proximate to the drain. Original
5-6. Canceled
Canceled
Canceled
11-15. Canceled
Canceled
23-24. Canceled
Canceled
Canceled
Canceled
30-34. Canceled
Canceled
36-38. Canceled
Canceled
Canceled
43-103. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based solid state electromagnetic radiation emitting device (FET structure)
Materials described outside the worked examples.
graphene
SiO₂
quartz
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,283,674Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 2A depicts the Top Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 2B depicts the Bottom Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 3 depicts Undulator Perpendicular Magnetic Fields developed from an embodiment of a magnetic array.
Figure 4 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets. The arrow illustrates the general current direction.
Figure 5 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets with a Graphene layer disposed therebetween.
Figure 6 depicts and Electron Radiation Pattern emanating from an accelerated electron.
Figure 7A illustrates a top-down view of an embodiment of a solid device according to the present invention.
Figure 7B depicts a cross-sectional side view of the device in
Figure 8 depicts a perspective 3D drawing of an embodiment of a solid state device according to the present invention.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 11 lists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention.
Figure 12A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 12B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 13 depicts a top-down view of an embodiment of a solid state device according to the present invention incorporating a Curved Periodic Graphene Path.
Figure 14A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 14B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 15 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoimprint Implementation.
Figure 16 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoribbon Implementation.
Figure 17 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Pulsed Output Implementation.
Figure 18 illustrates a Pulsed EM Output Sequence of a solid state device according to the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
Figure 20 provides an embodiment of a method for growing and patterning graphene on copper.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A solid state device capable of emitting electromagnetic radiation, comprising: a gate layer capable of controlling electron density in one or more upper layers; a first dielectric layer disposed directly on the gate layer; a graphene layer disposed adjacent to the first dielectric layer; a source disposed adjacent to, and in electrical communication with, the graphene layer; a drain disposed adjacent to, and in electrical communication with, the graphene layer, wherein the source and the drain are disposed at distal ends of the graphene layer, wherein application of an electromotive force between the source and drain gives rise to an electrical current in the graphene layer; and an alternating magnetic field source disposed proximate to the at least one graphene layer, wherein operation of the alternating magnetic field source gives rise to an alternating magnetic field oriented substantially perpendicular to the graphene layer, wherein said alternating magnetic field is capable of being operatively coupled to said electrical current to give rise the electromagnetic radiation produced from the graphene layer, wherein the g raphene la v er is characterized as havin g one or more linear dimensions other than its thickness, wherein the one or more linear dimensions have one or more of: at least about 1, 2, 3, 4, 5, 6, or 8 inches in diameter adjacent to a S iO 2 or a quartz wafer, on gl ass wafers havin g dimensions of about x 10 mm, about 20x 20 mm, about 100 x 100 mm, or from about 2 to 8 inches, about two inches in diameter on a standard S i C wafer, from about one inch square to about 4.5 inches square for an A 1 203 substrate, from about 1.9 inches square to 6 inches square for an A l N substrate, and about 30 inches wide by 200 feet long on a CVD roll-to-roll processing equipment; and about 1 m to about 97 cm for multiple devices in parallel. Currently amended
The solid state device of claim 1, wherein a plurality of layers forms a Field Effect Transistor structure for generating a field-effect n-doping or p-doping in the graphene layer. Original
The solid state device of claim 1, wherein the gate layer is capable of reflecting the electromagnetic radiation produced in the graphene layer disposed proximate to the gate layer. Original
The solid state device of claim 1, wherein the gate layer comprises one or more of the following material: conductors, doped semiconductors, doped Si, conductive polymers, ITO, transparent conductive polymers, and graphene. Original
The solid state device of claim 1, further comprising a substrate layer, wherein the gate layer is disposed adjacent to the substrate layer. Original
The solid state device of claim 1, wherein the first dielectric layer comprises one or more of the following materials: polymer dielectrics, inorganic insulators, electrolytes, S iO 2, A l N, BN, ZnO, A 120 3, HfO, ZrO2, diamond films, sapphire, quartz, glass, and S iC. Original
The solid state device of claim 1, wherein the alternating magnetic field source comprises one or more of the following: a Halback array, permanent magnets assembled in a collection with alternating field polarity, series of parallel wires with current flowing in alternating directions, electromagnets arranged in a collection with alternating field polarity, a magnetic film that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a magnetizable ferromagnetic metal that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a multilayer film deposited with an anti- ferromagnetic exchange bias pinning layer that alternates magnetic polarity on top of a ferromagnetic metal, an array of beams of polarized light, an array of beams of polarized laser light with alte rn ating B-field polarity, and periodic structures of dilute magnetic semiconductors arranged with alte rn ate polarity. Original
The solid state device of claim 1, wherein the alternating magnetic field source varies the magnetic field spatially, temporally, or any combination thereof. Original
The solid state device of claim 1, wherein the alte rn ating magnetic field source that varies the magnetic field spatially comprises one or more of the following: an array of Neodymium Iron Boron permanent magnets mounted and arranged with alternating magnetic poles; a Halback configuration having a magnetic period and capable of producing a 1500 to 3000 Gauss magnetic field perpendicular to the graphene layer; a magnetic array in a magnetic film comprising one or more ferromagnetic materials, the magnetic film comprising alternating field domains characterized as having a magnetic field strength of 10,000 to 20,000 Gauss with alternating field domains having a dimension as small as 180 nm; a magnetic array in a magnetic film comprising one or more anti-ferromagnetic materials characterized as having magnetic domains having a dimension as small as 400 nm; and an array of polarized light beams or an array polarized laser light beams with alte rn ating B-field polarity. Previously presented
The solid state device of claim 1, wherein the graphene layer is characterized as being a single layer thick of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer is characterized as multiple layers of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer comprises a dopant. Original
The solid state device of claim 1, further comprising a dielectric layer, wherein a second or more dielectric layers are optionally disposed on the graphene layer. Original
The solid state device of claim 1, wherein the source comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, wherein the drain comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, further comprising a back mirror disposed proximate to the source. Original
The solid state device of claim 1, further comprising a front filter disposed proximate to the drain. Original
5-6. Canceled
Canceled
Canceled
11-15. Canceled
Canceled
23-24. Canceled
Canceled
Canceled
Canceled
30-34. Canceled
Canceled
36-38. Canceled
Canceled
Canceled
43-103. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based solid state electromagnetic radiation emitting device (FET structure)
Materials described outside the worked examples.
graphene
SiO₂
quartz
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 10,283,674Patent drawings and their descriptions. Click a drawing to enlarge it.
Figure 1 B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 2A depicts the Top Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 2B depicts the Bottom Undulator Magnetic Field developed from an embodiment of a magnetic array.
Figure 3 depicts Undulator Perpendicular Magnetic Fields developed from an embodiment of a magnetic array.
Figure 4 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets. The arrow illustrates the general current direction.
Figure 5 depicts a 3D Illustration of an embodiment of an array of Undulator Magnets with a Graphene layer disposed therebetween.
Figure 6 depicts and Electron Radiation Pattern emanating from an accelerated electron.
Figure 7A illustrates a top-down view of an embodiment of a solid device according to the present invention.
Figure 7B depicts a cross-sectional side view of the device in
Figure 8 depicts a perspective 3D drawing of an embodiment of a solid state device according to the present invention.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 11 lists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention.
Figure 12A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 12B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 13 depicts a top-down view of an embodiment of a solid state device according to the present invention incorporating a Curved Periodic Graphene Path.
Figure 14A depicts a top-down view of an embodiment of a solid state device according to the present invention.
Figure 14B depicts a cross-sectional side view of the solid state device depicted in Figure lA.
Figure 15 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoimprint Implementation.
Figure 16 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Nanoribbon Implementation.
Figure 17 depicts a perspective view of an embodiment of a solid state device according to the present invention incorporating a Pulsed Output Implementation.
Figure 18 illustrates a Pulsed EM Output Sequence of a solid state device according to the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
Figure 20 provides an embodiment of a method for growing and patterning graphene on copper.
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
A solid state device capable of emitting electromagnetic radiation, comprising: a gate layer capable of controlling electron density in one or more upper layers; a first dielectric layer disposed directly on the gate layer; a graphene layer disposed adjacent to the first dielectric layer; a source disposed adjacent to, and in electrical communication with, the graphene layer; a drain disposed adjacent to, and in electrical communication with, the graphene layer, wherein the source and the drain are disposed at distal ends of the graphene layer, wherein application of an electromotive force between the source and drain gives rise to an electrical current in the graphene layer; and an alternating magnetic field source disposed proximate to the at least one graphene layer, wherein operation of the alternating magnetic field source gives rise to an alternating magnetic field oriented substantially perpendicular to the graphene layer, wherein said alternating magnetic field is capable of being operatively coupled to said electrical current to give rise the electromagnetic radiation produced from the graphene layer, wherein the g raphene la v er is characterized as havin g one or more linear dimensions other than its thickness, wherein the one or more linear dimensions have one or more of: at least about 1, 2, 3, 4, 5, 6, or 8 inches in diameter adjacent to a S iO 2 or a quartz wafer, on gl ass wafers havin g dimensions of about x 10 mm, about 20x 20 mm, about 100 x 100 mm, or from about 2 to 8 inches, about two inches in diameter on a standard S i C wafer, from about one inch square to about 4.5 inches square for an A 1 203 substrate, from about 1.9 inches square to 6 inches square for an A l N substrate, and about 30 inches wide by 200 feet long on a CVD roll-to-roll processing equipment; and about 1 m to about 97 cm for multiple devices in parallel. Currently amended
The solid state device of claim 1, wherein a plurality of layers forms a Field Effect Transistor structure for generating a field-effect n-doping or p-doping in the graphene layer. Original
The solid state device of claim 1, wherein the gate layer is capable of reflecting the electromagnetic radiation produced in the graphene layer disposed proximate to the gate layer. Original
The solid state device of claim 1, wherein the gate layer comprises one or more of the following material: conductors, doped semiconductors, doped Si, conductive polymers, ITO, transparent conductive polymers, and graphene. Original
The solid state device of claim 1, further comprising a substrate layer, wherein the gate layer is disposed adjacent to the substrate layer. Original
The solid state device of claim 1, wherein the first dielectric layer comprises one or more of the following materials: polymer dielectrics, inorganic insulators, electrolytes, S iO 2, A l N, BN, ZnO, A 120 3, HfO, ZrO2, diamond films, sapphire, quartz, glass, and S iC. Original
The solid state device of claim 1, wherein the alternating magnetic field source comprises one or more of the following: a Halback array, permanent magnets assembled in a collection with alternating field polarity, series of parallel wires with current flowing in alternating directions, electromagnets arranged in a collection with alternating field polarity, a magnetic film that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a magnetizable ferromagnetic metal that has been permanently magnetized with arrays of alternating field domains using an external magnetizing device, a multilayer film deposited with an anti- ferromagnetic exchange bias pinning layer that alternates magnetic polarity on top of a ferromagnetic metal, an array of beams of polarized light, an array of beams of polarized laser light with alte rn ating B-field polarity, and periodic structures of dilute magnetic semiconductors arranged with alte rn ate polarity. Original
The solid state device of claim 1, wherein the alternating magnetic field source varies the magnetic field spatially, temporally, or any combination thereof. Original
The solid state device of claim 1, wherein the alte rn ating magnetic field source that varies the magnetic field spatially comprises one or more of the following: an array of Neodymium Iron Boron permanent magnets mounted and arranged with alternating magnetic poles; a Halback configuration having a magnetic period and capable of producing a 1500 to 3000 Gauss magnetic field perpendicular to the graphene layer; a magnetic array in a magnetic film comprising one or more ferromagnetic materials, the magnetic film comprising alternating field domains characterized as having a magnetic field strength of 10,000 to 20,000 Gauss with alternating field domains having a dimension as small as 180 nm; a magnetic array in a magnetic film comprising one or more anti-ferromagnetic materials characterized as having magnetic domains having a dimension as small as 400 nm; and an array of polarized light beams or an array polarized laser light beams with alte rn ating B-field polarity. Previously presented
The solid state device of claim 1, wherein the graphene layer is characterized as being a single layer thick of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer is characterized as multiple layers of bonded carbon atoms. Original
The solid state device of claim 1, wherein the graphene layer comprises a dopant. Original
The solid state device of claim 1, further comprising a dielectric layer, wherein a second or more dielectric layers are optionally disposed on the graphene layer. Original
The solid state device of claim 1, wherein the source comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, wherein the drain comprises one or more of the following materials: conductive polymers, semiconductors, doped semiconductors, and metals. Original
The solid state device of claim 1, further comprising a back mirror disposed proximate to the source. Original
The solid state device of claim 1, further comprising a front filter disposed proximate to the drain. Original
5-6. Canceled
Canceled
Canceled
11-15. Canceled
Canceled
23-24. Canceled
Canceled
Canceled
Canceled
30-34. Canceled
Canceled
36-38. Canceled
Canceled
Canceled
43-103. Canceled
Canceled
Layer stacks claimed or described, ordered top of device to substrate.
graphene-based solid state electromagnetic radiation emitting device (FET structure)
Materials described outside the worked examples.
graphene
SiO₂
quartz
Measurements and analyses referenced in the patent, with their drawing references.
Figure 9 depicts a perspective 3D drawing of a portion of a solid state device according to the present invention showing a Graphene FET (bottom) and Reflector (top).
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
Thickness | 400–800 nm | — |
Thickness |
Related documents with shared materials, methods, properties, or citations.
SiC
Al₂O₃
doped Si
ITO
conductive polymers
transparent conductive polymers
conductors
doped semiconductors
AlN
BN
ZnO
HfO
ZrO₂
diamond films
sapphire
glass
polymer dielectrics
inorganic insulators
electrolytes
Neodymium Iron Boron permanent magnets
carbon nanotubes
fullerenes
ferromagnetic nanoparticles
metal nanoparticles
graphene-dielectric superlattice
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
| — |
Thickness | 1–100000000 nm | — |
Thickness | 0.34–100000000 nm | — |
Thickness | 2–10000000 nm | — |
Thickness | 0.6–1.3 cm | — |
Thickness | 15–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10000–15000 cm | — |
Thickness | 40000–70000 cm | — |
Voltage | ≤ 300 V | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 82372 cm | — |
Thickness | ≥ 1 nm | — |
SiC
Al₂O₃
doped Si
ITO
conductive polymers
transparent conductive polymers
conductors
doped semiconductors
AlN
BN
ZnO
HfO
ZrO₂
diamond films
sapphire
glass
polymer dielectrics
inorganic insulators
electrolytes
Neodymium Iron Boron permanent magnets
carbon nanotubes
fullerenes
ferromagnetic nanoparticles
metal nanoparticles
graphene-dielectric superlattice
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
| — |
Thickness | 1–100000000 nm | — |
Thickness | 0.34–100000000 nm | — |
Thickness | 2–10000000 nm | — |
Thickness | 0.6–1.3 cm | — |
Thickness | 15–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10000–15000 cm | — |
Thickness | 40000–70000 cm | — |
Voltage | ≤ 300 V | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 82372 cm | — |
Thickness | ≥ 1 nm | — |
SiC
Al₂O₃
doped Si
ITO
conductive polymers
transparent conductive polymers
conductors
doped semiconductors
AlN
BN
ZnO
HfO
ZrO₂
diamond films
sapphire
glass
polymer dielectrics
inorganic insulators
electrolytes
Neodymium Iron Boron permanent magnets
carbon nanotubes
fullerenes
ferromagnetic nanoparticles
metal nanoparticles
graphene-dielectric superlattice
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
| — |
Thickness | 1–100000000 nm | — |
Thickness | 0.34–100000000 nm | — |
Thickness | 2–10000000 nm | — |
Thickness | 0.6–1.3 cm | — |
Thickness | 15–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10000–15000 cm | — |
Thickness | 40000–70000 cm | — |
Voltage | ≤ 300 V | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 82372 cm | — |
Thickness | ≥ 1 nm | — |
SiC
Al₂O₃
doped Si
ITO
conductive polymers
transparent conductive polymers
conductors
doped semiconductors
AlN
BN
ZnO
HfO
ZrO₂
diamond films
sapphire
glass
polymer dielectrics
inorganic insulators
electrolytes
Neodymium Iron Boron permanent magnets
carbon nanotubes
fullerenes
ferromagnetic nanoparticles
metal nanoparticles
graphene-dielectric superlattice
Figure 10 depicts a schematic circuit diagram for operating a Graphene FET structure according to an embodiment of the present invention.
Figure 19 l ists a table of an exemplification of Prototype Operating and Performance Parameters, Variables, and Values, for operating an embodiment of a solid state device according to the present invention in connection with a Corrugated Graphene FET Emitter.
| — |
Thickness | 1–100000000 nm | — |
Thickness | 0.34–100000000 nm | — |
Thickness | 2–10000000 nm | — |
Thickness | 0.6–1.3 cm | — |
Thickness | 15–20 nm | — |
Thickness | 1–10 nm | — |
Thickness | 10000–15000 cm | — |
Thickness | 40000–70000 cm | — |
Voltage | ≤ 300 V | — |
Thickness | ≥ 40000 cm | — |
Thickness | ≥ 82372 cm | — |
Thickness | ≥ 1 nm | — |