Patent
US 12,575,224 B2P-TYPE DOPING IN GaN LEDs FOR HIGH SPEED OPERATION AT LOW CURRENT DENSITIES
Bardia Pezeshki, Cameron Danesh
AvicenaTech, Corp., Sunnyvale, CA (US)·Mar. 10, 2026·US
Copyright © 2026 Matter42. All rights reserved.
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US 12,575,224 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
FIG. 4 is a block diagram of an optical communication or processing system making use of a GaN based LED as a 30 light source, in accordance with aspects of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optical processing system making use of an LED as a light source, comprising: a data source comprising a semiconductor chip with logic circuitry; LED drive circuitry coupled to the data source, the LED drive circuitry configured to generate current based on data received from the data source; an LED coupled to the LED drive circuitry so as to receive current to drive the LED to generate light encoding the data, the LED comprising a p type GaN layer, an n type GaN layer, and a plurality of alternating quantum well layers and barrier layers making up an active region of the LED between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with only barrier layers that are between the quantum well layers in the active region being p-doped by a p-doping concentration of at least 1019/cm3; and a detector to receive light generated by the LED, the detector configured to provide an electrical signal rep-resentative of data in the received light; wherein the drive circuitry is configured to drive the LED to generate light with a current density of greater than 4000 A/cm2.
The optical processing system of claim 1, further comprising a coherent fiber bundle optically between the LED and the detector.
The optical processing system of claim 1, wherein the logic circuitry includes a processor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/InGaN LED for optical data transmission
Materials described outside the worked examples.
p-type GaN
GaN
InGaN quantum well
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doping concentration in barrier layers (Mg) | ≥ 10000000000000000000 cm⁻³ | GaN |
LED drive current density (claimed minimum) | ≥ 4000 A/cm2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,575,224 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
FIG. 4 is a block diagram of an optical communication or processing system making use of a GaN based LED as a 30 light source, in accordance with aspects of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optical processing system making use of an LED as a light source, comprising: a data source comprising a semiconductor chip with logic circuitry; LED drive circuitry coupled to the data source, the LED drive circuitry configured to generate current based on data received from the data source; an LED coupled to the LED drive circuitry so as to receive current to drive the LED to generate light encoding the data, the LED comprising a p type GaN layer, an n type GaN layer, and a plurality of alternating quantum well layers and barrier layers making up an active region of the LED between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with only barrier layers that are between the quantum well layers in the active region being p-doped by a p-doping concentration of at least 1019/cm3; and a detector to receive light generated by the LED, the detector configured to provide an electrical signal rep-resentative of data in the received light; wherein the drive circuitry is configured to drive the LED to generate light with a current density of greater than 4000 A/cm2.
The optical processing system of claim 1, further comprising a coherent fiber bundle optically between the LED and the detector.
The optical processing system of claim 1, wherein the logic circuitry includes a processor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/InGaN LED for optical data transmission
Materials described outside the worked examples.
p-type GaN
GaN
InGaN quantum well
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doping concentration in barrier layers (Mg) | ≥ 10000000000000000000 cm⁻³ | GaN |
LED drive current density (claimed minimum) | ≥ 4000 A/cm2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,575,224 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
FIG. 4 is a block diagram of an optical communication or processing system making use of a GaN based LED as a 30 light source, in accordance with aspects of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optical processing system making use of an LED as a light source, comprising: a data source comprising a semiconductor chip with logic circuitry; LED drive circuitry coupled to the data source, the LED drive circuitry configured to generate current based on data received from the data source; an LED coupled to the LED drive circuitry so as to receive current to drive the LED to generate light encoding the data, the LED comprising a p type GaN layer, an n type GaN layer, and a plurality of alternating quantum well layers and barrier layers making up an active region of the LED between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with only barrier layers that are between the quantum well layers in the active region being p-doped by a p-doping concentration of at least 1019/cm3; and a detector to receive light generated by the LED, the detector configured to provide an electrical signal rep-resentative of data in the received light; wherein the drive circuitry is configured to drive the LED to generate light with a current density of greater than 4000 A/cm2.
The optical processing system of claim 1, further comprising a coherent fiber bundle optically between the LED and the detector.
The optical processing system of claim 1, wherein the logic circuitry includes a processor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/InGaN LED for optical data transmission
Materials described outside the worked examples.
p-type GaN
GaN
InGaN quantum well
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doping concentration in barrier layers (Mg) | ≥ 10000000000000000000 cm⁻³ | GaN |
LED drive current density (claimed minimum) | ≥ 4000 A/cm2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
Patent
Atlas literature
Patent
US 12,575,224 B2Patent drawings and their descriptions. Click a drawing to enlarge it.
FIG. 1a.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
FIG. 4 is a block diagram of an optical communication or processing system making use of a GaN based LED as a 30 light source, in accordance with aspects of …
Claims define the patent's legal scope. Independent claims stand alone; dependent claims (nested) narrow them. Click a claim to expand its dependents.
An optical processing system making use of an LED as a light source, comprising: a data source comprising a semiconductor chip with logic circuitry; LED drive circuitry coupled to the data source, the LED drive circuitry configured to generate current based on data received from the data source; an LED coupled to the LED drive circuitry so as to receive current to drive the LED to generate light encoding the data, the LED comprising a p type GaN layer, an n type GaN layer, and a plurality of alternating quantum well layers and barrier layers making up an active region of the LED between the p type GaN layer and the n type GaN layer, with the quantum well layers being undoped and with only barrier layers that are between the quantum well layers in the active region being p-doped by a p-doping concentration of at least 1019/cm3; and a detector to receive light generated by the LED, the detector configured to provide an electrical signal rep-resentative of data in the received light; wherein the drive circuitry is configured to drive the LED to generate light with a current density of greater than 4000 A/cm2.
The optical processing system of claim 1, further comprising a coherent fiber bundle optically between the LED and the detector.
The optical processing system of claim 1, wherein the logic circuitry includes a processor. ∗ ∗ ∗ ∗ ∗
Layer stacks claimed or described, ordered top of device to substrate.
GaN/InGaN LED for optical data transmission
Materials described outside the worked examples.
p-type GaN
GaN
InGaN quantum well
InGaN
Additional fabrication and treatment steps described in the patent.
Measurements and analyses referenced in the patent, with their drawing references.
FIG. 2 graphs measured 3 dB optical bandwidth versus current density for the structure of
Performance values and ranges asserted in the specification or claims.
| Property | Value | Material |
|---|---|---|
p-doping concentration in barrier layers (Mg) | ≥ 10000000000000000000 cm⁻³ | GaN |
LED drive current density (claimed minimum) | ≥ 4000 A/cm2 |
Patents and literature cited by this patent (applicant and examiner references).
Cited patents · 10
Related documents with shared materials, methods, properties, or citations.
patterned sapphire substrate
Al₂O₃
AlGaN electron blocking layer
AlGaN
GaN/InGaN superlattice
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
p-doping concentration in barrier layers (embodiment, higher) | ≥ 100000000000000000000 cm⁻³ | GaN |
Thickness | 2–4 um | — |
Thickness | 10–20 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–15 nm | — |
Cited non-patent literature · 12
patterned sapphire substrate
Al₂O₃
AlGaN electron blocking layer
AlGaN
GaN/InGaN superlattice
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
p-doping concentration in barrier layers (embodiment, higher) | ≥ 100000000000000000000 cm⁻³ | GaN |
Thickness | 2–4 um | — |
Thickness | 10–20 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–15 nm | — |
Cited non-patent literature · 12
patterned sapphire substrate
Al₂O₃
AlGaN electron blocking layer
AlGaN
GaN/InGaN superlattice
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
p-doping concentration in barrier layers (embodiment, higher) | ≥ 100000000000000000000 cm⁻³ | GaN |
Thickness | 2–4 um | — |
Thickness | 10–20 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–15 nm | — |
Cited non-patent literature · 12
patterned sapphire substrate
Al₂O₃
AlGaN electron blocking layer
AlGaN
GaN/InGaN superlattice
FIG. 3 further graphs the measured 3 dB optical band- width versus current density for the structure of
p-doping concentration in barrier layers (embodiment, higher) | ≥ 100000000000000000000 cm⁻³ | GaN |
Thickness | 2–4 um | — |
Thickness | 10–20 nm | — |
Thickness | 5–10 nm | — |
Thickness | 10–15 nm | — |
Cited non-patent literature · 12